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BCW68 [TYSEMI]

For general AF applications. High current gain. Low collector-emitter saturation voltage.; 对于一般自动对焦的应用。高电流增益。低集电极 - 发射极饱和电压。
BCW68
型号： BCW68
厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述：

For general AF applications. High current gain. Low collector-emitter saturation voltage.
对于一般自动对焦的应用。高电流增益。低集电极 - 发射极饱和电压。
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Product specification  
BCW67,BCW68  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
For general AF applications.  
High current gain.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Low collector-emitter saturation voltage.  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
BCW67  
-45  
BCW68  
-60  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-32  
-45  
V
-5  
-5  
V
-800  
mA  
mA  
mA  
mA  
mW  
-1000  
-100  
Peak collector current  
Base current  
ICM  
IB  
-200  
Peak base current  
IBM  
330  
Ptot  
Tj  
Total power dissipation,TS = 79  
Junction temperature  
Storage temperature  
Junction - soldering point  
150  
-65 to +150  
215  
Tstg  
RthJS  
K/W  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
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Product specification  
BCW67,BCW68  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
-32  
-45  
-45  
-60  
-5  
Typ  
Max  
Unit  
V
BCW67  
Collector-emitter breakdown voltage  
V(BR)CEO IC = -10 mA, IB = 0  
BCW68  
BCW67  
BCW68  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
V(BR)CBO IC = -10 ìA, IE = 0  
V(BR)EBO IE = -10ìA, IC = 0  
V
V
BCW67  
BCW68  
BCW67  
BCW68  
VCB = -32 V, IE = 0  
ICBO  
VCB = -45 V, IE = 0  
-20  
-20  
-20  
-20  
-20  
nA  
Collector cutoff current  
Emitter cutoff current  
VCB = -32 V, IE = 0 , TA = 150  
ICBO  
IEBO  
ìA  
nA  
VCB = -45 V, IE = 0 , TA = 150  
VEB = -4 V, IC = 0  
A/F  
B/G  
C/H  
A/F  
B/G  
C/H  
A/F  
B/G  
C/H  
35  
50  
DC current gain *  
DC current gain *  
DC current gain *  
hFE-group  
hFE-group  
hFE-group  
hFE  
hFE  
hFE  
IC = 100 ìA, VCE = 10 V  
IC = 10 mA, VCE = 1 V  
IC = -100 mA, VCE = -1 V  
80  
75  
120  
180  
100  
160  
250  
160  
250  
350  
250  
400  
630  
-0.3  
-0.7  
-1.25  
-2  
IC = -100 mA, IB = -10 mA  
IC = -500 mA, IB = -50 mA  
IC = -100 mA, IB = -10 mA  
IC = -500 mA, IB = -50 mA  
IC = -50 mA, VCE = -5 V, f = 20 MHz  
VCB = -10 V, f = 1 MHz  
Collector-emitter saturation voltage  
*
VCE(sat)  
V
Base-emitter saturation voltage  
*
VBE(sat)  
Transition frequency  
fT  
200  
6
MHz  
pF  
Collector-base capacitance  
Emitter-base capacitance  
Ccb  
Ceb  
VEB = -0.5 V, f = 1 MHz  
60  
* Pulse test: t  
300ìs, D = 2%.  
hFE Classification  
BCW67  
B
TYPE  
Rank  
A
C
Marking  
DAs  
DBs  
DCs  
BCW68  
G
TYPE  
Rank  
F
H
Marking  
DFs  
DGs  
DHs  
4008-318-123  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  

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