BCW68F-T [RECTRON]
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| 型号： | BCW68F-T |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | 暂无描述 晶体 晶体管 IOT |
| 文件： | 总2页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
BCW68G
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
* Collector current
ICM :
0.33
W (Tamb=25OC)
-0.8
A
* Collector-base voltage
: -60
V
V
(BR)CBO
SOT-23
* Operating and storage junction temperature range
T ,Tstg: -55OC to +150OC
J
COLLECTOR
3
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.055(1.40)
0.047(1.20)
BASE
1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
* Weight: 0.008 gram
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
3
Dimensions in inches and (millimeters)
O
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
MAX
-
TYP
-
CHARACTERISTICS
SYMBOL
UNITS
MIN
-60
V
Collector-base breakdown voltage (I = -10µA, I =0)
(BR)CBO
V
V
C
E
V
-
-
-
-
Collector-emitter breakdown voltage (I = -10mA, I =0)
(BR)CEO
-45
C
B
V
Emitter-base breakdown voltage (I = -10µA, I =0)
(BR)EBO
V
-5
-
E
C
-
-
µA
Collector cut-off current (V = -45V, I =0)
I
CBO
-0.02
CB
E
-
Collector cut-off current (V = -4V, I =0)
I
EBO
µA
-0.02
EB
C
-
-
-
-
DC current gain (V = -10V, I = -0.1mA)
50
-
-
CE
C
DC current gain (V = -1V, I = -10mA)
CE
C
120
160
h
FE
-
-
-
-
DC current gain (V = -1V, I = -100mA)
400
-
CE
C
DC current gain (V = -2V, I = -500mA)
60
-
CE
C
Collector-emitter saturation voltage (I = -100mA, I = -10mA)
-
-
-
-
-
C
B
-0.3
-0.7
-1.25
-2
V
V
V
V
CE(sat)
Collector-emitter saturation voltage (I = -500mA, I = -50mA)
-
-
C
B
Base-emitter saturation voltage (I = -100mA, I = -10mA)
C
B
V
BE(sat)
-
100
-
Base-emitter saturation voltage (I = -500mA, I = -50mA)
V
C
B
MHz
Transition frequency (V = -10V, I = -20mA, f=100MHZ)
CE
-
fT
C
-
-
-
Cob
Output capacitance (V = -10V, I = 0, f=1MHZ)
CB
F
P
18
80
10
E
Input capacitance (V = -0.5V, I = 0, f=1MHZ)
EB
E
F
P
Cib
NF
-
-
Noise figure (V = -5V, I = -0.2mA, f=1kHz, ∆f=200Hz, RG=1KΩ)
dB
CE
E
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
DG
2006-3
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
RECTRON
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