BCW68F [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; PNP硅平面中功率晶体管
| 型号： | BCW68F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCW68
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS –
BCW68F –
BCW68G –
BCW68H –
DF
DG
DH
BCW68FR – 7T
BCW68GR – 5T
BCW68HR – 7N
E
C
B
COMPLEMENTARY TYPES – BCW66
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCES
VCEO
VEBO
ICM
VALUE
-60
UNIT
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-45
V
-5
V
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
-1000
-800
mA
mA
mA
mW
°C
IC
IB
-100
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
Tj:Tstg
-55 to +150
TBA
BCW68
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
V(BR)CEO -45
V(BR)CES -60
V(BR)EBO -5
ICES
V
ICEO=-10mA
Breakdown Voltage
IC=-10µA
Emitter-Base Breakdown Voltage
V
IEBO =-10µA
Collector-Emitter
Cut-off Current
-20
-10
nA
µA
VCES =-45V
CES =-45V, Tamb=150°C
V
Emitter-Base Cut-Off Current
IEBO
-20
nA
VEBO =-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
V
V
IC=-100mA, IB = -10mA
IC= -500mA, IB =-50mA*
-0.7
Base-Emitter Saturation Voltage
VBE(sat)
-2
V
IC=-500mA,IB=-50mA*
Static
BCW68F hFE
100 170 250
35
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Forward
Current
Transfer
BCW68G hFE
BCW68H hFE
fT
160 250 400
60
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
250 350 630
100
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Transition Frequency
100
MHz IC =-20mA, VCE =-10V
f = 100MHz
Output Capacitance
Input Capacitance
Noise Figure
Cobo
12
2
18
80
10
pF
pF
dB
VCB =-10V, f =1MHz
VEB =-0.5V, f =1MHz
IC= -0.2mA, VCE =- 5V
Cibo
N
R
G =1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100 ns
400 ns
IC=-150mA
I
B1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
TBA
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