BAS55 [TYSEMI]
Small plastic SMD package High switching speed: max. 6ns; 小型塑料SMD封装高开关速度：最大。为6ns
| 型号： | BAS55 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Small plastic SMD package High switching speed: max. 6ns |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BAS55
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Small plastic SMD package
1
2
High switching speed: max. 6ns
Continuous reverse voltage: max. 60 V
Repetitive peak forward current: max. 600 mA.
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VRRM
VR
Conditions
Note 1
Min
Max
60
Unit
V
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
60
V
IF
250
600
mA
mA
IFRM
square wave; Tj =25
t = 1
t = 100
t = 100 ms
Tmab = 25 ; Note 1
prior to surge;
9
s
Non-repetitive peak forward current
IFSM
A
3
s
1.7
250
+150
150
Total power dissipation
Storage temperature
Junction temperature
Note
Ptot
Tstg
Tj
mW
-65
1. Device mounted on an FR4 printed-circuit board.
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Product specification
BAS55
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
Conditions
IF = 200 mA;DC value; Note 1
VR = 60 V;
Max
1.0
Unit
V
VF
IR
100
100
2.5
nA
A
Reverse current
VR = 60 V; Tj = 150
Diode capacitance
Reverse recovery time
Cd
trr
f = 1 MHz; VR = 0;
pF
when switched from IF = 400 mA to IR = 400 mA;
6
ns
V
RL = 100
;measured at IR = 40 mA;
when switched to IF = 400 mA;tr = 30 ns;
when switched to IF = 400 mA;tr = 100 ns;
2
Forward recovery voltage
Note
Vf r
1.5
1. Tamb = 25
; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
Marking
Marking
L5p
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