BAS56 [TYSEMI]
Small plastic SMD package High switching speed: max. 6 ns; 小型塑料SMD封装高开关速度：最大。 6纳秒
| 型号： | BAS56 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Small plastic SMD package High switching speed: max. 6 ns |
| 文件： | 总2页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BAS56
Unit: mm
Features
Small plastic SMD package
High switching speed: max. 6 ns
Continuous reverse voltage:max. 60 V
Repetitive peak reverse voltage:max. 60 V
Repetitive peak forward current:max. 600 mA.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VRRM
Test Condition
Min
Max
60
Unit
V
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
series connection
120
60
VR
V
series connection
single diode loaded;
120
200
150
600
430
IF
mA
mA
double diode loaded;
single diode loaded
IFRM
double diode loaded
square wave; Tj = 25 prior to surge
9
t = 1
s
non-repetitive peak forward current
IFSM
A
3
t = 100
s
t = 10 ms
1.7
250
+150
150
360
500
total power dissipation
Ptot
Tstg
mW
Tamb = 25
storage temperature
-65
junction temperature
Tj
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Rth j-tp
Rth j-a
K/W
K/W
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Product specification
BAS56
Electrical Characteristics Ta = 25
Parameter
forward voltage
Symbol
VF
Test Condition
IF = 200 mA; DC value;
VR = 60 V
Min
Max
1.0
Unit
mV
nA
A
100
100
reverse current
IR
VR =60 V;Tj = 150
series connection
reverse current
IR
VR = 120 V
100
100
2.5
nA
A
VR =120 V;Tj = 150
diode capacitance
Cd
trr
f = 1 MHz; VR = 0
pF
when switched from IF = 400 mA to,IR = 400 mA;
reverse recovery time
6
ns
RL = 100 ; measured at IR = 40 mA
when switched from IF = 400 mA;tr = 30 ns;
when switched from IF = 400 mA;tr = 100 ns;
2.0
1.5
V
V
forward recovery voltage
Vfr
Marking
Marking
L51
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