BAS56 [CENTRAL]
DUAL HIGH CURRENT SWITCHING DIODE; 双路高电流开关二极管
| 型号： | BAS56 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | DUAL HIGH CURRENT SWITCHING DIODE |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
BAS56
S e m ic o n d u c t o r Co r p .
DUAL HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high current, high speed switching
applications.
Marking code is L51.
SOT-143 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
V
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
V
V
I
60
60
R
RRM
F
V
200
600
4000
1000
350
mA
mA
mA
mA
mW
I
I
I
FRM
FSM
FSM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
J stg
JA
-65 to +150
357
C
C/W
o
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
100
10
0.75
1.00
1.25
2.5
6.0
50
1.2
1.5
UNITS
nA
µA
µA
V
I
I
I
V
V
F
V
C
T
t
V =60V
R
R
R
F
R
o
V =60V, T =150 C
R
A
V =75V
R
I =10mA
F
I =200mA
V
V
pF
ns
pC
V
F
I =500mA
F
F
V =0, f=1 MHz
R
I =I =400mA, R =100Ω, Rec. to 40mA
rr
s
FR
F R
F
L
Q
V
V
I =10mA, V =5.0V, R =500Ω
R
L
I =400mA, t =30ns
F
r
r
I =400mA, t =100ns
V
FR
F
60
All dimensions in inches (mm).
LEAD CODE:
1) ANODE 1
2) ANODE 2
3) CATHODE 2
4) CATHODE 1
R2
61
相关型号：
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