2SK1152S [TYSEMI]
Low on-resistance High speed switching Low drive current No secondary breakdown; 低导通电阻的高速开关低驱动电流，无二次击穿
| 型号： | 2SK1152S |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low on-resistance High speed switching Low drive current No secondary breakdown |
| 文件： | 总1页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
2SK1152S
TO-252
Unit: mm
Features
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-resistance
High speed switching
Low drive current
0.127
max
+0.1
0.80
-0.1
No secondary breakdown
Suitable for switching regulator and DC-DC converter
1 Gate
+0.1
0.60
-0.1
2.3
4.60
2 Drain
3 Source
+0.15
-0.15
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Rating
Unit
V
500
V
30
1.5
A
Drain current(pulse) *
Power dissipation
ID
6
20
A
PD
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s, duty cycle
1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID=10mA,VGS=0
Min
500
30
Typ
Max
Unit
V
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
VDSS
VGSS
IDSS
V
ID= 100 A,VDS=0
VDS=400V,VGS=0
VGS= 25V,VDS=0
100
10
A
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
IGSS
A
VGS(off) VDS=10V,ID=1mA
VDS=20V,ID=1A
2.0
0.6
3.0
V
1.1
4.0
160
45
5
s
Yfs
RDS(on) VGS=10V,ID=1A
Ciss
6.0
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Coss
Crss
td(on)
tr
Reverse transfer capacitance
Turn-on delay time
5
Rise time
10
20
10
ID=1A,VGS(on)=0,RL=30
Turn-off delay time
td(off)
tf
Fall time
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