2SK1153 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1153 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总9页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1153, 2SK1154
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
1
D
2
3
1. Gate
2. Drain
G
(Flange)
3. Source
S
2SK1153, 2SK1154
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1153
2SK1154
VDSS
450
V
500
Gate to source voltage
Drain current
VGSS
±30
V
ID
3
A
1
Drain peak current
ID(pulse)
*
12
A
Body to drain diode reverse drain current
Channel dissipation
IDR
3
A
Pch*2
Tch
30
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SK1153, 2SK1154
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1153 V(BR)DSS 450
—
—
V
ID = 10 mA, VGS = 0
2SK1154
500
Gate to source breakdown
voltage
V(BR)GSS ±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
—
—
±10
µA
µA
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V *1
Zero gate voltage
drain current
2SK1153 IDSS
2SK1154
250
Gate to source cutoff voltage
Static Drain to source 2SK1153 RDS(on)
on stateresistance 2SK1154
VGS(off)
2.0
—
—
1.5
—
—
—
—
—
—
—
—
—
3.0
2.8
3.0
—
—
—
—
—
—
—
—
—
V
2.0
2.2
2.5
330
90
15
7
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
ID = 2 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
pF
pF
pF
ns
ns
ns
ns
V
ID = 2 A, VGS = 10 V,
20
30
20
0.9
RL = 15 Ω
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward
voltage
VDF
IF = 3 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
300
—
ns
IF = 3 A, VGS = 0,
diF/dt = 100 A/µs
Note: 1. Pulse test
3
2SK1153, 2SK1154
Maximum Safe Operation Area
Power vs. Temperature Derating
50
20
60
10
5
40
20
2
0.1
0.5
0.2
Ta = 25°C
2SK1154
2SK1153
0.01
0.05
1
3
10
30
100 300 1,000
0
50
100
150
Drain to Source Voltage VDS (V)
Case Temperature TC (°C)
Typical Output Characteristics
10 V
Typical Transfer Characteristics
–25°C
5
4
3
2
1
5
4
3
2
8 V
Pulse Test
VDS = 10 V
Pulse Test
TC = 25°C
5.5 V
5 V
6 V
75°C
4.5 V
1
0
VGS = 4 V
0
4
8
12
16
20
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
4
2SK1153, 2SK1154
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
20
16
12
Pulse Test
Pulse Test
20
10
5
VGS = 10 V
8
4
3 A
15 V
2
1.0
0.5
2 A
ID = 1 A
0
4
8
12
16
20
0.1 0.2
0.5 1.0
2
5
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
5
4
3
2
1
0
5
2
VDS = 10 V
Pulse Test
–25°C
VGS = 10 V
Pulse Test
TC = 25°C
3 A
1.0
75°C
2 A
0.5
ID = 1 A
0.2
0.1
–40
0
40
80
120
160
0.1 0.2
0.5 1.0
2
5
0.05
Case Temperature TC (°C)
Drain Current ID (A)
5
2SK1153, 2SK1154
Body to Drain Diode Reverse
Typical Capacitance
Recovery Time
vs. Drain to Source Voltage
1,000
500
1,000
100
10
Ciss
di/dt = 100 A/µs, Ta = 25°C
V
GS = 0
VGS = 0
f = 1 MHz
Pulse Test
200
100
50
Coss
Crss
20
10
1
0.05 0.1 0.2
0.5 1.0
2
5
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
500
500
20
16
12
8
•
VGS = 10 V VDD = 30 V
VDD = 100 V
250 V
•
PW = 2µs, duty < 1%
200
100
50
400
300
200
100
VDS
400 V
VGS
td (off)
tf
20
ID = 3 A
tr
VDD = 400 V
250 V
100 V
4
td (on)
10
5
0
20
0.05 0.1 0.2
0.5 1.0
2
5
0
4
8
12
16
Drain Current ID (A)
Gate Charge Qg (nc)
6
2SK1153, 2SK1154
Reverse Drain Current vs.
Source to Drain Voltage
5
4
3
2
1
Pulse Test
5 V, 10 V
VGS=0, –10 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
θch–c(t) = γS (t) · θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
PW
D =
T
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Wavewforms
90 %
Vout Monitor
RL
D.U.T
Vin
10 %
10 %
10 %
Vout
50 Ω
.
90 %
d (off)
90 %
t
Vin = 10 V
VDD = 30 V
.
t
t
t
d (on)
r
f
7
Unit: mm
11.5 MAX
10.16 ± 0.2
4.44 ± 0.2
9.5
8.0
+0.1
-0.08
1.26 ± 0.15
φ 3.6
2.7 MAX
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
0.5 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
EIAJ
TO-220AB
Conforms
Conforms
Weight (reference value) 1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
©2020 ICPDF网 联系我们和版权申明