2SK1152STL-E [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1152STL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总8页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1151(L), 2SK1151(S)
2SK1152(L), 2SK1152(S)
Silicon N Channel MOS FET
REJ03G0907-0200
(Previous: ADE-208-1245)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
Ratings
Unit
2SK1151
2SK1152
VDSS
450
V
500
Gate to source voltage
Drain current
VGSS
ID
ID(pulse)
IDR
±30
V
A
1.5
1
Drain peak current
*
6
1.5
A
Body to drain diode reverse drain current
Channel dissipation
A
Pch*2
20
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown 2SK1151
V(BR)DSS
450
500
±30
—
—
—
V
ID = 10 mA, VGS = 0
voltage
2SK1152
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
—
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *3
±10
100
µA
µA
Zero gate voltage drain
current
2SK1151
IDSS
—
2SK1152
Gate to source cutoff voltage
VGS(off)
RDS(on)
2.0
—
—
0.6
—
—
—
—
—
—
—
—
—
—
3.5
4.0
1.1
160
45
5
3.0
5.5
6.0
—
—
—
—
—
—
—
—
—
—
V
Static drain to source on
state resistance
2SK1151
2SK1152
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
ID = 1 A, VDS = 20 V *3
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
5
ID = 1 A, VGS = 10 V,
RL = 30 Ω
10
20
10
1.0
220
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward voltage
VDF
trr
IF = 1.5 A, VGS = 0
Body to drain diode reverse recovery
time
ns
IF = 1.5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Main Characteristics
Power vs. Temperature Derating
30
Maximum Safe Operation Area
10
3
20
10
1.0
0.3
0.1
2SK1151
0.03
0.01
Ta = 25
°C
2SK1152
0
50
100
150
1
10
100
1,000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
15 V
5 V
VDS = 20 V
Pulse Test
6 V
Pulse Test
10 V
4.5 V
4 V
–25°C
75°C
VGS = 3.5 V
TC = 25
6
°C
0
4
8
12
16
20
0
2
4
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
100
50
20
16
12
8
Pulse Test
Pulse Test
VGS = 10 V
20
10
2 A
15 V
5
1 A
4
ID = 0.5 A
2
1
0.05 0.1 0.2
0.5 1.0
2
5
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
5
ID = 2 A
VDS = 20 V
Pulse Test
VGS = 10 V
Pulse Test
8
–25°C
2
1.0
0.5
6
TC = 25°C
1 A
75°C
0.5 A
4
0.2
0.1
2
0
–40
0
40
80
120
160
0.1 0.2
0.5 1.0
2
5
50
5
0.05
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1,000
1,000
100
VGS = 0
f = 1 MHz
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
500
Ciss
200
100
50
Coss
10
1
20
10
Crss
0.05 0.1 0.2
0.5 1.0
2
5
0
10
20
30
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
400
300
20
100
50
•
VGS = 10 V VDD = 30 V
100 V
250 V
•
PW = 2 µs, duty < 1%
16
12
8
VDS
400 V
td (off)
20
10
tf
VGS
200
100
td (on)
tr
5
ID = 1.5 A
VDD = 400 V
250 V
100 V
4
2
1
0
10
0
2
4
6
8
0.05 0.1 0.2
0.5 1.0
2
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
1.6
1.2
0.8
0.4
Pulse Test
5 V, 10 V
VGS = 0, –10 V
0.8 1.2
Source to Drain Voltage VSD (V)
0
0.4
1.6
2.0
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
θ
θ
= γ (t) • θ
ch–c
S
= 6.25°C/W, TC = 25°C
ch–c(t)
ch–c
PDM
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90 %
Vout Monitor
RL
Vin
10 %
10 %
D.U.T
10 %
Vout
50 Ω
90 %
d (off)
90 %
.
VDD = 30 V
t
t
t
r
t
f
d (on)
Vin = 10 V
.
Rev.2.00 Sep 07, 2005 page 5 of 7
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZD-A
Package Name
MASS[Typ.]
0.42g
Unit: mm
DPAK(L)-(1) / DPAK(L)-(1)V
6.5 0.5
5.4 0.5
2.3 0.2
0.55 0.1
1.2 0.3
1.15 0.1
0.8 0.1
0.55 0.1
2.29 0.5
2.29 0.5
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name
MASS[Typ.]
0.28g
Unit: mm
DPAK(S) / DPAK(S)V
2.3 0.2
6.5 0.5
5.4 0.5
(5.1)
0.55 0.1
(0.1)
(0.1)
0 – 0.25
(1.2)
0.55 0.1
1.0 Max.
0.8 0.1
2.29 0.5
2.29 0.5
Rev.2.00 Sep 07, 2005 page 6 of 7
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Ordering Information
Part Name
2SK1151L-E
Quantity
Shipping Container
3200 pcs
3000 pcs
3200 pcs
3000 pcs
Box (Sack)
Taping
2SK1151STL-E
2SK1152L-E
Box (Sack)
Taping
2SK1152STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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