2SB1120 [TYSEMI]
Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. small-sized hybrid ICS; 低集电极 - 发射极饱和电压VCE （ sat）的最大值= -0.45V 。小型混合动力ICS
| 型号： | 2SB1120 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. small-sized hybrid ICS |
| 文件： | 总1页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SB1120
Features
Low collector-to-emitter saturation voltage :
VCE(sat)max=-0.45V.
Large current capacity : IC=-2.5A, ICP=-5A.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-20
-10
V
-7
V
-2.5
A
Collector current (pulse)
Collector dissipation
ICP
-5
A
PC
500
mW
Jumction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
IEBO
Testconditons
Min
Typ
Max
-100
-100
560
Unit
nA
VCB = -16V , IE = 0
VCB = -4V , IE = 0
nA
VCE = -2V , IC = -500mA
VCE=-2V IC=-3A
100
70
DC current Gain
hFE
Gain bandwidth product
fT
VCE = -10V , IC = -50mA
250
-0.25 -0.45
MHz
V
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
VCE(sat) IC = -1.5A , IB = -0.15A
V(BR)CBO IC = -10ìA , IE = 0
-20
-10
-7
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Cob VCB = -10V , f = 1MHz
V
70
pF
hFE Classification
BC
F
Marking
Rank
hFE
E
G
280 560
100 200
160 320
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