2SB1120_15 [KEXIN]
PNP Transistors;
| 型号： | 2SB1120_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总3页 (文件大小：1109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SB1120
1.70 0.1
■ Features
● Very small size making it easy to provide high
highdensity, small-sized hybrid IC’s.
● Low collector-to-emitter saturation voltage
● Large current capacity : IC=–2.5A, ICP=–5A.
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-20
-10
-7
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
I
C
-2.5
-5
A
I
CP
Collector Power Dissipation
(Note.1)
0.5
1.3
150
P
C
W
℃
Junction Temperature
TJ
Storage Temperature range
Note.1: Mounted on ceramic board (250mm2 ×0.8mm)
■ Electrical Characteristics Ta = 25℃
T
stg
-55 to 150
Parameter
Symbol
Test Conditions
Min
-20
-10
-7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA， I
Ic= -1 mA， RBE=∞
= -100μA， I =0
CB= -16V , I =0
EB= -4V , I =0
E=0
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-1.5 A, I
B=-150mA
-0.25 -0.45
-1.2
V
C
=-1.5 A, I
B=-150mA
V
V
V
V
CE= -2V, I
CE= -2V, I
C
= -500 mA
100
70
560
DC current gain
hFE
C= -3 A
Collector output capacitance
Transition frequency
Cob
CB = –10V, I
CE= -10V, I
E
= 0, f = 1MHz
70
pF
f
T
C= -50mA
250
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SB1120-E
100-200
BC E*
2SB1120-F
160-320
BC F*
2SB1120-G
280-560
BC G*
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SB1120
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SB1120
■ Typical Characterisitics
3
www.kexin.com.cn
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