2SB1121 [KEXIN]
PNP Epitaxial Planar Silicon Transistors; PNP外延平面硅晶体管
| 型号： | 2SB1121 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Epitaxial Planar Silicon Transistors |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1121
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-30
-25
V
-6
V
-2
-5
A
Collector current (pulse)
Collector dissipation
ICP
A
PC
500
mW
Jumction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
1
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SMD Type
Transistors
2SB1121
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = -20V , IE = 0
Min
100
Typ
Max
-0.1
-0.1
560
Unit
ìA
Collector cutoff current
ICBO
IEBO
hFE
fT
Emitter cutoff current
VCB = -4V , IE = 0
ìA
DC current Gain
VCE = -2V , IC = -100mA
VCE = -10V , IC = -50mA
Gain bandwidth product
150
MHz
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
VCE(sat) IC = -1.5A , IB = -75mA
VBE(sat) IC = -1.5A , IB = -75mA
V(BR)CBO IC = -10ìA , IE = 0
-0.35 -0.6
-0.85 -1.2
V
-30
-25
-6
V
V(BR)CEO
V
IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
V
Cob
ton
VCB = -10V , f = 1MHz
32
60
pF
Turn-on time
Storage time
Fall time
ns
ns
ns
tstg
350
25
tf
hFE Classification
BC
Marking
Rank
E
F
G
hFE
100 200
160 320
280 560
2
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