TLD5S33AH [TSC]
3600W, 10V â 43V Surface Mount Transient Voltage Suppressor;
| 型号： | TLD5S33AH |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3600W, 10V â 43V Surface Mount Transient Voltage Suppressor |
| 文件： | 总5页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLD5S10AH – TLD5S43AH
Taiwan Semiconductor
3600W, 10V – 43V Surface Mount Transient Voltage Suppressor
FEATURES
KEY PARAMETERS
● AEC-Q101 qualified
PARAMETER
VALUE
10 – 43
UNIT
● Junction passivation optimized design technology
● TJ =175 °C capability suitable for high reliability and automotive
requirement
VWM
V
V
VBR
PPPM
11.1 – 52.8
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
3600
W
(10x1,000μs)
PPPM
2800
175
W
● Halogen-free according to IEC 61249-2-21
● Meets ISO7637-2 and ISO16750-2 surge specifications (varied by
test conditions)
(10x10,000μs)
TJ MAX
°C
Package
DO-218AB
APPLICATIONS
● Transient Surge Protection.
● Automotive Load Dump Surge Protection.
MECHANICAL DATA
● Case: DO-218AB
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Uni-directional
● Weight: 2.677g (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
10/1000μs waveform
PPPM
3600
W
W
Non-repetitive peak impulse power dissipation with
PPPM
2800
10/10000μs waveform (1)
Steady state power dissipation (2)
Forward Voltage at IF=100 A (3)
Peak forward surge current, 8.3 ms single half sine-wave
Junction temperature
PD
VF, MAX
IFSM
5
2
W
V
500
A
TJ
-55 to +175
-55 to +175
°C
°C
Storage temperature
TSTG
Notes:
1. Non-repetitive current pulse per Fig. 3.
2. Units mounted on PCB (16mm x 16mm Cu pad test board)
3. Pulse test with PW=0.3 ms
1
Version: B1809
TLD5S10AH – TLD5S43AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
TYP.
7.8
UNIT
°C/W
°C/W
°C/W
Junction-to-case thermal resistance per diode
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
RӨJL
10.0
49.5
RӨJA
Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Maximum
Maximum
peak impulse
current
IPPM
Breakdown
blocking
leakage
current
Working
stand-off
voltage
VWM
Maximum
clamping
voltage
VC at IPPM
(V)
voltage
VBR at IT
(V)
Test
current
IT
Part number Marking code
IR at VWM
(µA)
(Note 1)
(A)
(Note 1)
(mA)
(V)
tp =10/1000 μs
Min. Max.
11.1 12.3
TLD5S10AH
TLD5S11AH
TLD5S12AH
TLD5S13AH
TLD5S14AH
TLD5S15AH
TLD5S16AH
TLD5S17AH
TLD5S18AH
TLD5S20AH
TLD5S22AH
TLD5S24AH
TLD5S26AH
TLD5S28AH
TLD5S30AH
TLD5S33AH
TLD5S36AH
TLD5S40AH
TLD5S43AH
TLD5S10A
TLD5S11A
TLD5S12A
TLD5S13A
TLD5S14A
TLD5S15A
TLD5S16A
TLD5S17A
TLD5S18A
TLD5S20A
TLD5S22A
TLD5S24A
TLD5S26A
TLD5S28A
TLD5S30A
TLD5S33A
TLD5S36A
TLD5S40A
TLD5S43A
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
43.0
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
212
198
181
167
155
148
138
130
123
111
101
93
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
12.2 13.5
13.3 14.7
14.4 15.9
15.6 17.2
16.7 18.5
17.8 19.7
18.9 20.9
20.0 22.1
22.2 24.5
24.4 26.9
26.7 29.5
28.9 31.9
31.1 34.4
33.3 36.8
36.7 40.6
40.0 44.2
44.4 49.1
47.8 52.8
86
79
74
68
62
56
52
Note:
1. Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE
(Note)
PACKAGE
DO-218AB
PACKING
750 / 13” Plastic reel
TLD5SxxAH MAG
Note: "xx" defines voltage from 10V (TLD5S10AH) to 43V (TLD5S43AH)
2
Version: B1809
TLD5S10AH – TLD5S43AH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Derating Curve
Fig.2 Load Dump Power Characteristics
(10ms Exponential Waveform)
3500
3000
2500
2000
1500
1000
500
6
5
4
3
Heat sink
16mm x 16mm
Cu pad test board
2
1
0
0
25
50
75
100
125
150
175
0
25
50
75
100 125 150 175
CASE TEMPERATURE (°C)
CASE TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Reverse Power Capability
10000
150
100
50
Pulse width (td) is defined
as the point where the peak
current decays to 50% of IPPM
tr=10μs
Peak value
IPPM
Half value -
IPPM/2
td
0
1000
0
5
10
15
20
25
30
35
40
10
100
t - TIME (ms)
PULSE WIDTH (ms)
Fig.5 Typical Transient Thermal Impedance
Fig.6 Typical Junction Capacitance
100
100000
f = 1MHz
Vsig = 50mVP-P
RθJA
10
Measured at Zero Bias
10000
1000
100
RθJC
1
0.1
Measured at Stand-Off
Voltage VWM
0.01
0.01
0.1
1
10
100
10
15
20
25
30
35
40
45
STAND-OFF VOLTAGE, VWM(V)
PULSE DURATION (s)
3
Version: B1809
TLD5S10AH – TLD5S43AH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-218AB
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
YWW
F
= Marking Code
= Date Code
= Factory Code
4
Version: B1809
TLD5S10AH – TLD5S43AH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version: B1809
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