TLD6S12AH [TSC]
4600W, 10V â 43V Surface Mount Transient Voltage Suppressor;
| 型号： | TLD6S12AH |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 4600W, 10V â 43V Surface Mount Transient Voltage Suppressor |
| 文件： | 总5页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
4600W, 10V – 43V Surface Mount Transient Voltage Suppressor
FEATURES
KEY PARAMETERS
● AEC-Q101 qualified
PARAMETER
VALUE
10 – 43
UNIT
● Junction passivation optimized design technology
● TJ =175 °C capability suitable for high reliability and automotive
requirement
VWM
V
V
VBR
PPPM
11.1 – 52.8
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
4600
W
(10x1,000μs)
PPPM
3600
175
W
● Halogen-free according to IEC 61249-2-21
● Meets ISO7637-2 and ISO16750-2 surge specifications (varied by
test conditions)
(10x10,000μs)
TJ MAX
°C
Package
DO-218AB
APPLICATIONS
● Transient Surge Protection.
● Automotive Load Dump Surge Protection.
MECHANICAL DATA
● Case: DO-218AB
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Uni-directional
● Weight: 2.682g (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse power dissipation with
10/1000μs waveform
PPPM
4600
W
W
Non-repetitive peak impulse power dissipation with
PPPM
3600
10/10000μs waveform (1)
Steady state power dissipation (2)
Forward Voltage at IF=100 A (3)
Peak forward surge current, 8.3 ms single half sine-wave
Junction temperature
PD
VF, MAX
IFSM
6
W
V
1.9
600
A
TJ
-55 to +175
-55 to +175
°C
°C
Storage temperature
TSTG
Notes:
1. Non-repetitive current pulse per Fig. 3.
2. Units mounted on PCB (16mm x 16mm Cu pad test board)
3. Pulse test with PW=0.3 ms
1
Version: B1809
TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
TYP.
7.75
UNIT
°C/W
°C/W
°C/W
Junction-to-case thermal resistance per diode
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
RӨJL
9.97
RӨJA
49.27
Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board)
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Maximum
Maximum
peak impulse
current
IPPM
Breakdown
blocking
leakage
current
Working
stand-off
voltage
VWM
Maximum
clamping
voltage
VC at IPPM
(V)
voltage
VBR at IT
(V)
Test
current
IT
Part number Marking code
IR at VWM
(µA)
(Note 1)
(A)
(Note 1)
(mA)
(V)
tp =10/1000 μs
Min. Max.
11.1 12.3
TLD6S10AH
TLD6S11AH
TLD6S12AH
TLD6S13AH
TLD6S14AH
TLD6S15AH
TLD6S16AH
TLD6S17AH
TLD6S18AH
TLD6S20AH
TLD6S22AH
TLD6S24AH
TLD6S26AH
TLD6S28AH
TLD6S30AH
TLD6S33AH
TLD6S36AH
TLD6S40AH
TLD6S43AH
TLD6S10A
TLD6S11A
TLD6S12A
TLD6S13A
TLD6S14A
TLD6S15A
TLD6S16A
TLD6S17A
TLD6S18A
TLD6S20A
TLD6S22A
TLD6S24A
TLD6S26A
TLD6S28A
TLD6S30A
TLD6S33A
TLD6S36A
TLD6S40A
TLD6S43A
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
43.0
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
271
253
231
214
198
189
177
167
158
142
130
118
106
101
95
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
12.2 13.5
13.3 14.7
14.4 15.9
15.6 17.2
16.7 18.5
17.8 19.7
18.9 20.9
20.0 22.1
22.2 24.5
24.4 26.9
26.7 29.5
28.9 31.9
31.1 34.4
33.3 36.8
36.7 40.6
40.0 44.2
44.4 49.1
47.8 52.8
86
79
71
66
Note:
1. Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE
(Note)
PACKAGE
DO-218AB
PACKING
750 / 13” Plastic reel
TLD6SxxAH MAG
Note: "xx" defines voltage from 10V (TLD6S10AH) to 43V (TLD6S43AH)
2
Version: B1809
TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Derating Curve
Fig.2 Load Dump Power Characteristics
(10ms Exponential Waveform)
8
7
6
5
4
6000
5000
4000
3000
2000
1000
0
3
Heat sink
16mm x 16mm
Cu pad test board
2
1
0
25
50
75
100
125
150
175
0
25
50
75
100 125 150 175
CASE TEMPERATURE (°C)
CASE TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Reverse Power Capability
10000
150
100
50
Pulse width (td) is defined
as the point where the peak
current decays to 50% of IPPM
tr=10μs
Peak value
IPPM
Half value -
IPPM/2
td
0
1000
0
5
10
15
20
25
30
35
40
10
100
t - TIME (ms)
PULSE WIDTH (ms)
Fig.5 Typical Transient Thermal Impedance
Fig.6 Typical Junction Capacitance
100
100000
f = 1MHz
Vsig = 50mVP-P
RθJA
10
Measured at Zero Bias
10000
1000
100
RθJC
1
0.1
Measured at Stand-Off
Voltage VWM
0.01
0.01
0.1
1
10
100
10
15
20
25
30
35
40
45
STAND-OFF VOLTAGE, VWM(V)
PULSE DURATION (s)
3
Version: B1809
TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-218AB
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
YWW
F
= Marking Code
= Date Code
= Factory Code
4
Version: B1809
TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version: B1809
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