IRFZ24NS [TRSYS]

Power MOSFET; 功率MOSFET
IRFZ24NS
型号: IRFZ24NS
厂家: TRANSYS Electronics Limited    TRANSYS Electronics Limited
描述:

Power MOSFET
功率MOSFET

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文件: 总2页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IRFZ24NS/NL  
Power MOSFET  
VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A  
D
G
S
Symbol  
N Channel  
ELECTRICAL CHARACTERISICS at  
C Maximum. Unless stated Otherwise  
Value  
Tj = 25  
Unit  
Parameter  
Symbol  
V(BR)DSS  
Test Conditions  
Typ  
Max  
Min  
55  
Volt  
VGS = 0 VDC, ID = 250µA  
-
Drain to Source Breakdown Voltage  
Drain to Source Leakage Current  
-
-
-
-
VDS = 55VDC, VGS = 0VDC  
VDS = 44VDC, VGS = 0VDC  
25  
IDSS  
250  
µA  
Tj=150  
-
C
VGS = +20VDC  
nA  
nA  
-
-
-
-
100  
-100  
IGSS  
VGS(th)  
Gate to Source Leakage Current  
Gate Threshold Voltage  
V
GS = -20VDC  
ID = 250µA  
DS = VGS,  
-
V
2.0  
4.0  
Volt  
RDS(on) VGS= 10VDC, ID = 10A  
0.07  
Static Drain to Source On - Resistance  
-
-
-
QG  
Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
-
-
-
nC  
nC  
nC  
20  
5.3  
7.6  
ID = 25A  
QGS  
VDS = 44VDC  
,
-
V
GS = 10VDC  
QGD  
CISS  
-
pF  
pF  
pF  
Input Capacitance  
Output Capacitance  
Transfer Capacitance  
-
-
370  
140  
65  
COSS  
CRSS  
VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ  
-
-
-
-
td  
(on)  
Turn On Delay Time  
Turn Off Delay Time  
Rise Time  
nS  
nS  
-
-
4.9  
19  
34  
27  
td  
(off)  
V
DD = 28VDC, ID = 25A, RG = 12  
-
-
-
-
-
-
tr  
tf  
nS  
nS  
Fall Time  
Continuous Source Current  
Pulsed Source Current  
IS  
ISM  
17  
68  
1.3  
A
-
-
-
-
-
-
A
V
VGS = 0VDC, IS =10A,  
Tp = 300µS  
Forward Voltage (Diode)  
Single Pulse Avalanche Energy  
Repetive Avalanche Energy  
Avalanche Current  
VSD  
EAS  
EAR  
71  
4.5  
10  
mj  
mj  
A
IAR  
(Tj = 25 C unless stated otherwise)  
MAXIMUM RATINGS  
Parameter  
Condition  
Symbol  
VGS  
Value  
+/- 20V  
55  
Unit  
Gate to Source Voltage  
Volt  
Volt  
Amp  
Drain to Source  
Voltage  
Continuous Drain Current  
VDSS  
ID  
17  
IDM  
PD  
Pulsed Drain Current  
68  
45  
Amp  
W
Total Power Dissapation  
(TA = 25 C)  
Thermal Resistance  
(Junction to Ambient)  
RTH  
C/W  
(J-A)  
40  
Maximum Operating Temperature Range (Tj) -55 to +175  
C
Maximum Storage Temperature Range (Tstg) -55 to +175  
C
Page 1 of 2  
IRFZ24NS/NL  
Power MOSFET  
VDSS = 55V, RDS(on) = 17.5 mohm, ID = 49 A  
Mechanical Dimensions  
f
DIMENSIONS  
Millimetres  
a
Case SMB 220 Plastic  
Inches  
Min Max  
g
Dim  
a
b
Min  
Max  
c
9.85  
14.61  
10.67 0.380 0.420  
15.88 0.575 0.625  
4
c
1.65  
0.065  
1 - Gate  
d
e
f
g
8.51  
1.27  
4.08  
1.14  
1.15  
1.78  
0.38  
2.54 Pitch  
0.51  
0.51  
9.65  
0.335 0.380  
2 & 4 - Drain  
d
e
1.78 0.050 0.070  
4.83 0.180 0.190  
1.40 0.045 0.055  
1.400 0.045 0.055  
2.79  
0.77  
b
3 - Source  
1
2
3
h
j
k
m
n
p
0.070 0.110  
0.015 0.029  
0.10 Pitch  
0.020 0.038  
0.020 0.35  
m
n
j
k
0.99  
0.89  
p
Mechanical Dimensions  
h
DIMENSIONS  
Millimetres  
Min Max  
10.29 10.54 0.405 0.415  
9.91 10.54 0.390 0.415  
13.47 14.09 0.530 0.555  
a
Case TO262 Plastic  
Inches  
Min Max  
j
Dim  
a
b
c
d
e
4
1 - Gate  
2 & 4 - Drain  
3 - Source  
1.15  
1.15  
0.69  
0.045  
1.40 0.045 0.055  
0.93 0.027 0.037  
b
c
d
f
g
1
2
3
2.54 Pitch  
0.10 Pitch  
0.165 0.185  
0.048 0.052  
e
f
4.20  
1.22  
0.46  
2.64  
4.69  
1.32  
h
j
k
m
0.55 0.018 0.022  
2.92 0.104 0.115  
n
n
3.55  
4.06  
0.140 0.160  
k
m
g
Page 2 of 2  

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