IRFZ24NSPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFZ24NSPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95147
IRFZ24NS/LPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ24NS)
l Low-profilethrough-hole(IRFZ24NL)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.07Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-holeversion(IRFZ24NL)isavailableforlow-
profileapplications.
2
T O -262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
17
12
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
A
68
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
45
W
W
Power Dissipation
Linear Derating Factor
0.30
± 20
71
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
10
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
4.5
6.8
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
3.3
40
Units
RθJC
RθJA
°C/W
04/19/04
IRFZ24NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID =1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.07
Ω
V
S
VGS =10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10Aꢀ
VDS = 55V, VGS = 0V
Gate Threshold Voltage
2.0
4.5
––– 4.0
––– –––
Forward Transconductance
––– –––
25
IDSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 5.3
––– ––– 7.6
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
IGSS
VGS = -20V
Qg
ID = 10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
VDD = 28V
–––
–––
–––
–––
4.9 –––
34 –––
19 –––
27 –––
RiseTime
ID = 10A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 24Ω
RD = 2.6Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
nH
pF
–––
–––
7.5
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 370 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
65 –––
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– –––
––– –––
17
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
68
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 56 83
––– 120 180
V
TJ = 25°C, IS = 10A, VGS = 0V
TJ = 25°C, IF = 10A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 280µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ24N data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFZ24NS/LPbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs P ULSE W IDTH
T = 175°C
J
C
T = 25°C
T
= 25°C
C
J
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 17A
D
TJ = 25°C
TJ = 175°C
V
DS = 25V
20µs PULSE W IDTH
V
= 10V
G S
10 A
A
4
5
6
7
8
9
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
VG S , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
IRFZ24NS/LPbF
700
20
16
12
8
V
C
C
C
= 0V ,
f = 1MHz
I
= 10A
D
G S
iss
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
= 44V
= 28V
D S
D S
600
500
400
300
200
100
0
rss
oss
gd
C
C
iss
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPE RATION IN THIS AREA LIMITE D
BY R
DS(on)
T
= 175°C
J
T
= 25°C
J
10µ s
100µ s
1ms
T
T
= 25°C
= 175°C
S ingle Pulse
C
J
10ms
V
= 0V
G S
1
A
A
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
IRFZ24NS/LPbF
RD
VDS
20
16
12
8
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
4
0
25
50
75
100
125
150
175
10%
°
, Case Temperature ( C)
T
V
GS
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
0.02
P
SINGLE PULSE
(THERMAL RESPONSE)
DM
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRFZ24NS/LPbF
140
120
100
80
I
D
L
TOP
4.2A
7.2A
10A
V
DS
BO TTO M
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
60
0.01Ω
40
Fig 12a. Unclamped Inductive Test Circuit
V
20
(BR)DSS
t
p
V
= 25V
50
DD
0
A
175
25
75
100
125
150
V
DD
Starting T , Junction Tem perature (°C)
J
V
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. DrainCurrent
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFZ24NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14. ForN-ChannelHEXFETS
IRFZ24NS/LPbF
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
PART NUMB E R
LOT CODE 8024
INT E RNAT IONAL
RE CT IF IE R
LOGO
AS S E MB LE D ON WW 02, 2000
IN T H E AS S E MB LY LINE "L"
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
LOT CODE
LINE
L
OR
PART NUMBE R
INT ERNAT IONAL
RECT IFIE R
LOGO
F 530S
DAT E CODE
P = DE S IGNAT E S LE AD-F R EE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
AS S E MB LY
LOT CODE
WEE K 02
A = AS S E MB LY S IT E CODE
IRFZ24NS/LPbF
TO-262 Package Outline
TO-262 Part Marking Information
E XAMPL E : T H IS IS AN IRL 3103L
L OT CODE 1789
PAR T NU MB E R
IN T E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
DAT E CODE
YE AR 7 = 1997
WE E K 19
Note: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
C
O R
PAR T NU MB E R
DAT E CODE
IN T E R NAT IONAL
R E CT IF IE R
L OGO
P
=
DE S IGNAT E S L E AD-F RE E
PR ODU CT (OPT IONAL )
AS S E MB L Y
L OT CODE
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
IRFZ24NS/LPbF
D2Pak Tape & Reel Information
TRR
1.60 (.0 63)
1.50 (.0 59)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
1 1.60 (.457)
1 1.40 (.449)
1.85 (.0 73)
1.65 (.0 65)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
MIN .
30.40 (1.197)
MAX.
NO TES :
1. CO M FO RM S TO EIA-418.
2. CO N TR O LLING DIMENSIO N : MILLIMETER.
3. DIM ENSIO N M EASU RED
26.40 (1.039)
24.40 (.961)
4
@ H UB.
3
4. INC LU DES FLAN G E D ISTO RTIO N
@
O U TER ED G E.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
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