IRFZ24V [INFINEON]
Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A); 功率MOSFET （ VDSS = 60V ， RDS（ON） = 60mohm ，ID = 17A）
| 型号： | IRFZ24V |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) |
| 文件： | 总8页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94156
IRFZ24V
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
VDSS = 60V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 60mΩ
G
l Fully Avalanche Rated
l Optimized for SMPS Applications
ID = 17A
S
Description
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
17
12
A
68
PD @TC = 25°C
Power Dissipation
44
0.29
W
W/°C
V
Linear Derating Factor
VGS
IAR
Gate-to-Source Voltage
± 20
Avalanche Current
17
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4.4
mJ
V/ns
4.2
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
3.4
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
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1
3/16/01
IRFZ24V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 60
mΩ VGS = 10V, ID = 10A
2.0
7.8
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10A
VDS = 60V, VGS = 0V
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 23
––– ––– 7.7
––– ––– 6.2
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 17A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
7.6 –––
46 –––
21 –––
24 –––
VDD = 30V
ID = 17A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 18Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
S
Ciss
Coss
Crss
EAS
Input Capacitance
––– 590 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
23 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 140ꢀ43
mJ IAS = 17A, L = 300µH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
17
68
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 53 79
––– 90 130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 17A, VGS = 0V
TJ = 25°C, IF = 17A
ns
Qrr
ton
nC di/dt = 100A/µs
Notes:
ISD ≤ 17A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀThis is a typical value at device destruction and represents
operation outside rated limits.
Starting TJ = 25°C, L = 300µH
RG = 25Ω, IAS = 17A, VGS=10V (See Figure 12)
This is a calculated value limited to TJ = 175°C .
2
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IRFZ24V
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
20µs PULSE WIDTH
T = 25 C
°
°
J
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
17A
=
I
D
°
T = 25 C
J
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
10
V
= 25V
20µs PULSE WIDTH
DS
V
= 10V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
6
8
10 12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFZ24V
20
16
12
8
1000
I
D
= 17A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
V
V
= 48V
= 30V
= 12V
iss
gs
gd
DS
DS
DS
C
= C
rss
gd
800
C
= C + C
oss
ds
gd
Ciss
600
Coss
400
200
4
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
, Drain-to-Source Voltage (V)
100
0
4
8
12
16
20
24
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
10
100µsec
1
1msec
1
°
T = 25 C
J
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.6
1.0
1.4
1.8
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFZ24V
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
0.02
0.01
P
DM
0.1
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ24V
80
60
40
20
0
I
15V
D
TOP
6.9A
12A
17A
BOTTOM
DR IV ER
L
V
D S
D.U .T
R
G
+
-
V
D D
I
A
A S
V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFZ24V
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFZ24V
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IM ENSIONING
&
TOLERANCING PER ANSI Y14.5M , 1982.
3
4
OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIM ENSION : INCH
&
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IR F1010
W ITH ASSEM BLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NU M BER
LOT C ODE 9B1M
IR F1010
9246
9B
1M
D ATE COD E
(YYW W )
ASSEMBLY
LOT
CO DE
YY
=
YEAR
= W EEK
W W
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/01
8
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