BD115 [TRSYS]
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR; NPN硅平面高压晶体管型号: | BD115 |
厂家: | TRANSYS Electronics Limited |
描述: | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
文件: | 总2页 (文件大小:195K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BD115
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
VALUE
180
DESCRIPTION
SYMBOL
VCEO
UNITS
Collector Emitter Voltage
Collector Emitter Voltage (RBE<1KW
Collector Base Voltage
Emitter Base Voltage
V
V
VCER
245
VCBO
VEBO
IC
ICM
PD
245
5
150
200
6
V
V
mA
mA
W
ºC
Collector Current Continuous
Peak
Power Dissipation @ Ta=50ºC
Storage Temperature
Tj, Tstg
-55 to +200
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
25
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
VALUE
DESCRIPTION
SYMBOL TEST CONDITION
MIN
UNITS
TYP
MAX
BVCEO
BVCBO
BVEBO
ICBO
IC=1mA,IB=0
Collector Emitter Breakdown Voltage
Collector Base Breakdown Current
Emitter Base Breakdown Voltage
Collector Cutoff Current
V
V
V
nA
mA
mA
V
180
245
5
IC=100mA, IE=0
IE=100mA, Ic=0
VCB=200V, IE=0
VCB=200V,IE=0,Tj=200ºC
VEB=5V, IC=0
IC=100mA,IB=10mA
IC=50mA,VCE=100V
IC=50mA,VCE=100V
15
550
60
IEBO
VCE(Sat)
VBE(on)
hFE
Emitter Cutoff Current
100
3.5
1.0
*
*
Collector Emitter Saturation Voltage
Base Emitter On Voltage
DC Current Gain
V
22
DYNAMIC CHARACTERISTICS
Transition Frequency
fT
IC=30mA, VCE=100V
f=20MHz
IE=10mA, VCB=10V,
f=10MHz
VCE=20V, IC=10mA,
f=1.0MHz
145
30
MHz
ps
Collector Base Time Constant
Feedback Capacitance
rb'Cc
Cre
100
3.5
pF
*Pulse Test: Pulse Width <300ms, Duty Cycle <2%
BD115
TO-39
Metal Can Package
TO-39 Metal Can Package
A
B
9.39
8.50
6.60
0.53
0.88
2.66
5.33
0.86
1.02
—
A
B
C
D
E
F
G
H
J
8.50
7.74
6.09
0.40
—
2.41
4.82
0.71
0.73
12.70
K
L
42 DEG 48 DEG
D
G
2
PIN CONFIGURATION
1. EMITTER
1
2. BASE
3. COLLECTOR
3
H
L
2
1
3
J
Packing Detail
PACKAGE
STANDARD PACK
INNER CARTON BOX
OUTER CARTON BOX
Details
Net Weight/Qty
Size
Qty
Size
Qty
Gr Wt
TO-39
500 pcs/polybag 540 gm/500 pcs 3" x 7.5" x 7.5"
20K
17" x 15" x 13.5"
32K
40 kgs
相关型号:
BD115LEADFREE
Small Signal Bipolar Transistor, 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
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