2SA1037S [TRSYS]
Transistor;
| 型号： | 2SA1037S |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
SOT-23 Plastic-Encapsulated Transistors
SOT-23
1. BASE
2SA1037 TRANSISTOR (PNP)
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
2. 4
1. 3
:
0.2
W (Tamb=25℃)
Collector current
ICM
:
-0.15
A
V
Collector-base voltage
V(BR)CBO : -60
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
-60
-50
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic=-50µA, IE=0
Ic= -1mA, IB=0
V
V
IE= -50µA, IC=0
VCB=- 60 V , IE=0
VEB= -6V , IC=0
VCE=-6V, IC= -1mA
IC=-50 mA, IB= -5mA
-0.1
-0.1
560
-0.5
µA
µA
IEBO
Emitter cut-off current
hFE
120
120
DC current gain
VCE(sat)
V
Collector-emitter saturation voltage
VCE=-12V, IC= -2mA
MHz
Transition frequency
fT
f =30MHz
CLASSIFICATION OF hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
FS
Marking
FQ
FR
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