2SA1038/S [ROHM]
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,;型号: | 2SA1038/S |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 晶体 放大器 小信号双极晶体管 |
文件: | 总4页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SA1579 / 2SA1514K / 2SA1038S
Transistors
High-voltage Amplifier Transistor
(−120V, −50mA)
2SA1579 / 2SA1514K / 2SA1038S
zExternal dimensions (Unit : mm)
zFeatures
1) High breakdown voltage. (BVCEO = −120V)
2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.
2SA1579
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
JEDEC : SOT-323
(3) Collector
2SA1514K
1.6
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
JEDEC : SOT-346
(3) Collector
2SA1038S
4
2
0.45
0.45
2.5 0.5
5
Taping specifications
( ) ( ) ( )
1
2
3
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Rev.A
1/3
2SA1579 / 2SA1514K / 2SA1038S
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
−120
−120
−5
V
V
I
C
−50
mA
2SA1579 / 2SA1514K
0.2
Collector power
dissipation
P
C
W
2SA1038S
0.3
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
zPackaging specifications and hFE
Type
2SA1579
UMT3
RS
2SA1514K
SMT3
2SA1038S
Package
SPT
RS
−
hFE
RS
Marking
Code
R∗
R∗
T106
3000
T146
TP
Basic ordering unit (pieces)
3000
5000
Denotes hFE
∗
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
BVCBO
BVCEO
BVEBO
Min.
−120
−120
−5
−
−
−
180
−
−
Typ.
−
−
−
−
−
−
−
140
3.2
Max.
−
−
Unit
Conditions
V
V
I
I
I
C
= −50µA
= −1mA
C
−
V
E= −50µA
I
CBO
EBO
CE(sat)
FE
−0.5
−0.5
−0.5
560
−
µA
µA
V
V
V
CB= −100V
EB= −4V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
V
I
C/I
B
= −10mA/−1mA
= −2mA
h
−
MHz
pF
V
V
V
CE= −6V, I
C
Transition frequency
f
T
CE= −12V, I
CB= −12V, I
E
=2mA, f=100MHz
=0A, f=1MHz
Output capacitance
Cob
−
E
Rev.A
2/3
2SA1579 / 2SA1514K / 2SA1038S
Transistors
zElectrical characteristic curves
−10
−50
Ta=25°C
Ta=25°C
VCE= −6V
Ta=25°C
25.0
−
−20
−10
−5
22.5
−
500
200
−8
−6
−4
−2
−
20.0
−
5V
−
VCE= −1V
3V
−2
−1
100
50
−0.5
−5.0
−2.5µA
−0.2
IB=0
−0.1 0
−0.2
−0.5
−1
−2
−5
−10
−20
−50
0
−4
−8
−12
−16
−20
−0.2 −0.4
−0.6 −0.8 −1.0 −1.2 −1.4 −1.6
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
20
Ta=25°C
Ta=25°C
CE= −6V
Ta=25°C
f=1MH
Z
V
IE=0A
−0.5
500
200
10
5
Cob
−0.2
−0.1
IC/IB=50/1
100
50
20/1
2
1
10/1
−0.05
−0.2
−0.5
−1
−2
−5
−10
−20
−50
0.5
1
2
5
10
20
50
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I (mA)
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Collector-Emitter saturation voltage
vs. collector current
Fig.5 Transition frequency
vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
20
Ta=25°C
f=1MH
Z
IC=0A
Cib
10
5
2
1
−0.5
−1
−2
−5
−10
−20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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