2SA1038R [ROHM]

50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92;
2SA1038R
型号: 2SA1038R
厂家: ROHM    ROHM
描述:

50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

晶体 放大器 小信号双极晶体管
文件: 总4页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SA1579 / 2SA1514K / 2SA1038S  
Transistors  
High-voltage Amplifier Transistor  
(120V, 50mA)  
2SA1579 / 2SA1514K / 2SA1038S  
zExternal dimensions (Unit : mm)  
zFeatures  
1) High breakdown voltage. (BVCEO = 120V)  
2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.  
2SA1579  
1.25  
2.1  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT3  
EIAJ : SC-70  
(1) Emitter  
(2) Base  
JEDEC : SOT-323  
(3) Collector  
2SA1514K  
1.6  
2.8  
0.3Min.  
Each lead has same dimensions  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
JEDEC : SOT-346  
(3) Collector  
2SA1038S  
4
2
0.45  
0.45  
2.5 0.5  
5
Taping specifications  
( ) ( ) ( )  
1
2
3
ROHM : SPT  
EIAJ : SC-72  
(1) Emitter  
(2) Collector  
(3) Base  
Rev.A  
1/3  
2SA1579 / 2SA1514K / 2SA1038S  
Transistors  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
120  
120  
5  
V
V
I
C
50  
mA  
2SA1579 / 2SA1514K  
0.2  
Collector power  
dissipation  
P
C
W
2SA1038S  
0.3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
zPackaging specifications and hFE  
Type  
2SA1579  
UMT3  
RS  
2SA1514K  
SMT3  
2SA1038S  
Package  
SPT  
RS  
hFE  
RS  
Marking  
Code  
R∗  
R∗  
T106  
3000  
T146  
TP  
Basic ordering unit (pieces)  
3000  
5000  
Denotes hFE  
zElectrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
120  
120  
5  
180  
Typ.  
140  
3.2  
Max.  
Unit  
Conditions  
V
V
I
I
I
C
= −50µA  
= −1mA  
C
V
E= −50µA  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
0.5  
0.5  
560  
µA  
µA  
V
V
V
CB= −100V  
EB= −4V  
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
= −10mA/1mA  
= −2mA  
h
MHz  
pF  
V
V
V
CE= −6V, I  
C
Transition frequency  
f
T
CE= −12V, I  
CB= −12V, I  
E
=2mA, f=100MHz  
=0A, f=1MHz  
Output capacitance  
Cob  
E
Rev.A  
2/3  
2SA1579 / 2SA1514K / 2SA1038S  
Transistors  
zElectrical characteristic curves  
10  
50  
Ta=25°C  
Ta=25°C  
VCE= −6V  
Ta=25°C  
25.0  
20  
10  
5  
22.5  
500  
200  
8  
6  
4  
2  
20.0  
5V  
VCE= −1V  
3V  
2  
1  
100  
50  
0.5  
5.0  
2.5µA  
0.2  
IB=0  
0.1 0  
0.2  
0.5  
1  
2  
5  
10  
20  
50  
0
4  
8  
12  
16  
20  
0.2 0.4  
0.6 0.8 1.0 1.2 1.4 1.6  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE (V)  
COLLECTOR CURRENT : IC (mA)  
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation  
characteristics  
Fig.3 DC current gain vs. collector current  
20  
Ta=25°C  
Ta=25°C  
CE= −6V  
Ta=25°C  
f=1MH  
Z
V
IE=0A  
0.5  
500  
200  
10  
5
Cob  
0.2  
0.1  
IC/IB=50/1  
100  
50  
20/1  
2
1
10/1  
0.05  
0.2  
0.5  
1  
2  
5  
10  
20  
50  
0.5  
1
2
5
10  
20  
50  
0.5  
1  
2  
5  
10  
20  
COLLECTOR CURRENT : I  
C
(mA)  
EMITTER CURRENT : I (mA)  
E
COLLECTOR TO BASE VOLTAGE : VCB (V)  
Fig.4 Collector-Emitter saturation voltage  
vs. collector current  
Fig.5 Transition frequency  
vs. emitter current  
Fig.6 Collector output capacitance  
vs. collector-base voltage  
20  
Ta=25°C  
f=1MH  
Z
IC=0A  
Cib  
10  
5
2
1
0.5  
1  
2  
5  
10  
20  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.7 Emitter input capacitance  
vs. emitter-base voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

相关型号:

2SA1038S

High-voltage Amplifier Transistor (−120V, −50mA)
ROHM

2SA1038S/R

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM

2SA1038S/RS

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM

2SA1038S/S

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM

2SA1038SR

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SPAK
ETC

2SA1038SS

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SPAK
ETC

2SA1038STP/R

50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, APT, SC-72, 3 PIN
ROHM

2SA1038STP/RS

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM

2SA1038STP/S

50mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, APT, SC-72, 3 PIN
ROHM

2SA1038STPR

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SPAKVAR
ETC

2SA1038STPS

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SPAKVAR
ETC

2SA1038T93/R

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ROHM