TPCP8102 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS コ); 东芝场效应晶体管的硅P沟道MOS类型（U - MOSコ）
| 型号： | TPCP8102 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS コ) |
| 文件： | 总7页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPCP8102
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS Ⅳ)
TPCP8102
Notebook PC Applications
Unit: mm
Portable Equipment Applications
0.33±0.05
A
M
0.05
8
5
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON-resistance: R = 13.5 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 24 S (typ.)
fs
Low leakage current: I
= -10 μA (max) (V
= -20 V)
DSS
DS
0.475
1
4
B
B
M
0.05
0.65
Enhancement model: V = -0.45 to -1.2 V
th
2.9±0.1
A
(V
DS
= -10 V, I = -200 μA)
D
0.8±0.05
S
0.025
+0.1
-0.11
S
0.28
Absolute Maximum Ratings (Ta = 25°C)
0.17±0.02
+0.13
-0.12
1.12
1.12
Characteristic
Drain-source voltage
Symbol
Rating
Unit
+0.13
-0.12
-20
-20
V
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
+0.1
-0.11
GS
DGR
0.28
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
± 12
-7.2
-28.8
V
GSS
I
DC
(Note 1)
D
Drain current
A
I
Pulse (Note 1)
DP
Drain power dissipation
Drain power dissipation
(t = 5 s)
1.68
0.84
W
W
P
D
D
JEDEC
JEITA
⎯
(Note 2a)
⎯
(t = 5 s)
(Note 2b)
P
TOSHIBA
2-3V1K
33.7
-7.2
mJ
A
Single-pulse avalanche energy(Note 3)
Avalanche current
E
AS
Weight: 0.017 g (typ.)
I
AR
0.168
150
Repetitive avalanche energy (Note 4)
Channel temperature
E
mJ
°C
°C
AR
T
ch
-55~150
Storage temperature range
T
stg
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
Marking (Note 5)
8
7
5
6
8
7
6
5
8102
※
1
2
3
4
2
1
4
3
Lot No.
1
2006-11-17
TPCP8102
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient (t = 5 s)
R
74.4
°C/W
th (ch-a)
th (ch-a)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
R
148.8 °C/W
(Note 2b)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
V
DD
= -16 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I
= -7.2 A
AR
ch
G
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2006-11-17
TPCP8102
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ± 10 V, V = 0 V
DS
⎯
⎯
⎯
⎯
±10
-10
⎯
μA
μA
GSS
GS
DS
Drain cutoff current
I
= -20 V, V
= 0 V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= -10 mA, V
= -10 mA, V
-20
-8
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= 12 V
⎯
⎯
V
V
V
V
V
V
= -10 V, I = -200 μA
-0.45
⎯
⎯
-1.2
80
30
18
⎯
th
DS
GS
GS
GS
DS
D
= -2.0 V, I = -1.8 A
29
D
Drain-source ON-resistance
R
= -2.5 V, I = -3.6 A
⎯
20
mΩ
DS (ON)
D
= -4.5 V, I = -3.6 A
⎯
13.5
24
D
Forward transfer admittance
Input capacitance
|Y |
fs
= -10 V, I = -3.6 A
12
⎯
S
D
C
C
2560
330
380
⎯
iss
V
= -10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
Rise time
t
⎯
⎯
⎯
⎯
⎯
5
⎯
⎯
⎯
⎯
⎯
r
0 V
I
= -3.6 A
D
V
GS
V
OUT
-5 V
Turn-on time
t
14
42
142
33
on
Switching time
Fall time
ns
t
f
∼
V
-10 V
DD
Turn-off time
t
off
<
Duty 1%, t = 10 μs
w
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
I
-16 V, V
= -7.2 A
= -5 V,
GS
DD
nC
Gate-source charge 1
Q
⎯
⎯
5.4
10
⎯
⎯
D
gs1
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
-28.8
1.2
A
V
DRP
Forward voltage (diode)
V
I
= -3.6 A, V
= 0 V
GS
DSF
DR
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2006-11-17
TPCP8102
I
– V
I – V
D DS
D
DS
−5
−10
−10
−10
−1.7
−1.7
−1.8
−2
−3
−1.6
−1.8
−1.9
−2
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
−4
−3
−2
−1
0
−8
−6
−4
−2
0
−3
−5
−5
−1.5
−1.6
−1.5
−1.4
−1.4
V
= −1.3 V
GS
V
= −1.3 V
GS
0
−0.2
−0.4
−0.6
−0.8
−1.0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Drain−source voltage
V
(V)
Drain−source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
−12
−10
−8
−6
−4
−2
0
−0.5
−0.4
Common source
Ta = 25°C
Pulse test
Common source
= −10 V
V
DS
Pulse test
−0.3
100
−0.2
−0.1
0
25
I
= −7.2A
D
−3.6
Ta = −55°C
−2
−1.8
0
−1
−3
0
−4
−8
−12
−16
−20
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
|Y | – I
fs
R
– I
DS (ON) D
D
100
10
1
100
Common source
= −10 V
Pulse test
V
DS
V
= −2 V
GS
100
Ta = −55°C
−2.5
−4.5
25
10
Common source
Ta = 25°C
0.1
−0.1
Pulse test
−1
−10
−100
1
−0.1
−1
−10
−100
Drain current
I
(A)
Drain current
I
(A)
D
D
4
2006-11-17
TPCP8102
R
– Ta
I
– V
DS
DS (ON)
DR
60
50
40
30
20
10
0
−100
−10
−1
Common source
Pulse test
I
= −7.2 A
−1.8 A
D
V
= 0 V
GS
−10 −5
−1
−3.6 A
−3
V
= −2 V
GS
V
V
= −2.5 V
GS
Common source
Ta = 25°C
I
= −7.2 A, −3.6 A, −1.8 A
D
Pulse test
= −4.5 V
−40
GS
−0.1
−80
0
40
80
120
160
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Ambient temperature Ta (°C)
Drain−source voltage
V
(V)
DS
C – V
V
– Ta
th
DS
10000
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
Common source
= −10 V
V
DS
= −200 μA
I
D
Pulse test
C
iss
1000
C
oss
Common source
C
rss
Ta = 25°C
V
= 0 V
GS
−80
−40
0
40
80
120
160
f = 1 MHz
100
0.1
Ambient temperature Ta (°C)
10
100
Drain−source voltage
V
(V)
DS
Dynamic input/output
characteristics
P
– Ta
D
2.0
−20
−15
−10
−5
−8
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(1)
(2)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
V
= −16 V
DD
1.6
1.2
0.8
−6
−4
−2
0
t = 5 s
−8
V
DS
−4
V
= −16 V
DD
−8
−4
V
GS
20
Common source
= 7.2 A
Ta = 25°C
0.4
0
I
D
Pulse test
0
0
0
40
80
160
200
10
30
40
Total gate charge
Q
g
(nC)
Ambient temperature Ta (°C)
5
2006-11-17
TPCP8102
r
− t
w
th(j−c)
1000
100
10
Device mounted on a glass-epoxy board (b) (Note 2b)
Device mounted on a glass-epoxy board (a) (Note 2a)
Single pulse
(2)
(1)
1
0.1
0.001
0.1
1
100
1000
0.01
10
Pulse width
t
(s)
w
Safe operating area
100
I
max (pulse) *
D
1 ms *
10
10 ms *
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DS
DSS
0.1
0.1
1
10
Drain−source voltage
V
(V)
6
2006-11-17
TPCP8102
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2006-11-17
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