TPCP8103-H_09 [TOSHIBA]
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications; 高效率DC-DC转换器应用笔记本电脑应用便携式设备的应用CCFL逆变器应用
| 型号： | TPCP8103-H_09 |
| 厂家： | 
TOSHIBA |
| 描述： | High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications |
| 文件： | 总7页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPCP8103-H
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCP8103-H
High Efficiency DC-DC Converter Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
0.33±0.05
A
M
0.05
5
8
0.475
1
4
B
•
•
•
•
•
•
•
Small footprint due to a small and thin package
High speed switching
B
M
0.05
0.65
2.9±0.1
A
Small gate charge: Q
= 6.5 nC (typ.)
0.8±0.05
SW
Low drain-source ON-resistance: R
= 31 mΩ (typ.)
DS (ON)
S
0.17±0.02
0.025
+0.1
S
0.28
-0.11
High forward transfer admittance: |Y | = 10 S (typ.)
fs
+0.13
-0.12
Low leakage current: I
= −10 μA (max) (V
= −40V)
DSS
DS
1.12
1.12
Enhancement mode: V = −0.8 to −2.0 V (V
= −10 V, I = −1mA)
D
th
DS
+0.13
-0.12
+0.1
-0.11
0.28
1. Source 5. Drain
2. Source 6. Drain
3. Source 7. Drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
4. Gate
JEDEC
JEITA
8. Drain
―
―
V
−40
−40
V
V
V
DSS
V
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
DGR
GS
V
±20
GSS
TOSHIBA
2-3V1K
DC
(Note 1)
I
−4.8
−19.2
D
Weight: 0.017 g (typ.)
Drain current
A
Pulsed (Note 1)
I
DP
Circuit Configuration
Drain power dissipation
Drain power dissipation
(t = 5 s)
(Note 2a)
(t = 5 s)
P
1.68
0.84
W
W
D
D
8
7
5
6
P
(Note 2b)
Single-pulse avalanche energy
(Note 3)
E
10.7
−4.8
0.09
mJ
A
AS
Avalanche current
I
AR
Repetitive avalanche energy
E
mJ
AR
(Note 4)
1
2
4
3
T
T
150
°C
°C
Channel temperature
ch
−55 to 150
Storage temperature range
stg
Marking (Note 5)
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
8103H
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.
Lot No.
1
2009-12-10
TPCP8103-H
Thermal Characteristics
Characteristic
Symbol
Max
74.4
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
th (ch-a)
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
R
148.8
°C/W
(t = 5 s)
(Note 2b)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
V
DD
= -24 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I
= -4.8A
AR
ch
G
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2009-12-10
TPCP8103-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V
= −40 V, V
= 0 V
= 0 V
= 0 V
= 20 V
⎯
⎯
⎯
⎯
±10
−10
⎯
μA
μA
GSS
GS
DS
DS
GS
GS
GS
Drain cutoff current
I
DSS
V
V
I
I
= −10 mA, V
= −10 mA, V
−40
−20
−0.8
⎯
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
⎯
⎯
V
V
V
V
V
= −10 V, I = −1 mA
⎯
−2.0
54
th
DS
GS
GS
DS
D
= −4.5 V, I = −2.4 A
42
D
Drain-source ON-resistance
R
mΩ
S
DS (ON)
= −10 V, I = −2.4 A
⎯
31
40
D
Forward transfer admittance
Input capacitance
|Y |
fs
= −10 V, I = −2.4 A
5
10
⎯
D
C
C
⎯
800
115
165
⎯
iss
V
= -10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
V
rss
C
⎯
⎯
oss
Rise time
t
⎯
⎯
⎯
6.5
12.5
9
⎯
⎯
⎯
r
I
=−2.4A
D
GS
V
OUT
−10 V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
V
≈ −20 V
DD
Duty ≤ 1%, t = 10 μs
w
Turn-off time
t
⎯
⎯
⎯
37
19
11
⎯
⎯
⎯
off
V
≈ −32 V, V
= −10 V,
= −5 V,
DD
DD
GS
GS
I
= -4.8 A
D
Total gate charge
Q
g
(gate-source plus gate-drain)
V
≈ −32 V, V
= −4.8 A
I
D
nC
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Q
Q
⎯
⎯
⎯
1.5
5.5
6.5
⎯
⎯
⎯
gs1
V
≈ −32 V, V
= −10 V,
DD
= −4.8 A
GS
Q
gd
I
D
SW
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
−19.2
A
V
DRP
V
I
= −4.8 A, V = 0 V
GS
1.2
DSF
DR
3
2009-12-10
TPCP8103-H
I
– V
I – V
D DS
D
DS
−10
−8
−20
−16
Common
source
Ta = 25°C
Pulse test
Common
source
Ta = 25°C
Pulse test
−4
−6
−3.5
−6
−8
−4
−3.5
−8
−3.0
−10
−10
−12
−8
−6
−4
−2.7
−2.5
V
= −3.0 V
GS
−2.7
−2.5
−2
−4
−2.3
−2.3
−2.0
V
= −2 V
GS
0
0
0
−0.2
−0.4
−0.6
−0.8
−1
0
−0.4
−0.8
−1.2
−1.6
−2
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
−10
−8
−1
Common source
= −10 V
Common source
Ta = 25°C
Pulse test
V
DS
Pulse test
−0.8
−6
−4
−0.6
−0.4
−0.2
100
I
= −4.8A
D
Ta = −55°C
−2
−2.4
−1.2
−2
25
0
0
0
0
−1
−2
−3
−4
−5
−4
−6
−8
−10
Gate-source voltage
V
(V)
Gate-source voltage
V
(V)
GS
GS
|Y | – I
fs
R
– I
DS (ON) D
D
100
1000
100
10
Common source
= −10 V
Common source
Ta = 25°C
Pulse test
V
DS
Pulse test
Ta = −55°C
10
25
100
V
= −4.5V
GS
−10
1
1
−0.1
0.1
−0.1
−1
−10
−100
−1
−10
−100
Drain Current
I
(A)
Drain Current
I
(A)
D
D
4
2009-12-10
TPCP8103-H
R
– Ta
I
– V
DR DS
DS (ON)
100
80
−100
−10
−1
Common source
Ta = 25°C
Pulse test
Common source
Pulse test
−5
I
= −1.2, −2.4, −4.8 A
−10
D
60
40
−3
V
= −4.5V
GS
V
= 1V
GS
−1
I
= −1.2, −2.4, −4.8 A
D
20
0
0
V
= −10V
GS
−40
0
40
80
120
160
−80
0
0.2
0.4
0.6
0.8
1
1.2
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
10000
1000
100
−2
−2.6
C
iss
−1.2
−0.8
C
C
oss
rss
Common source
Common source
−0.4
V
= −10 V
DS
= −1 mA
V
= 0 V
GS
I
D
f = 1 MHz
Ta = 25°C
Pulse test
10
−0.01
0
−80
−40
0
40
80
120
160
−0.1
−1
−10
−100
Drain-source voltage
V
(V)
Ambient temperature Ta (°C)
DS
Dynamic input/output
characteristics
P
– Ta
D
−50
−40
2
1.5
1
−20
① Device mounted on a glass-epoxy
board (a) (Note 2a)
② Device mounted on a glass-epoxy
board (b) (Note 2b)
Common source
= − 4.8 A
Ta = 25°C
①
I
D
−16
Pulse test
t = 5s
V
= −32 V
DD
V
−30
−20
DS
−12
−8
−16
−16
−8
−8
②
V
= −32 V
DD
0.5
V
GS
−10
−4
0
0
0
0
0
5
10
15
20
25
40
80
120
160
Total gate charge
Q
g
(nC)
Ambient temperature Ta (°C)
5
2009-12-10
TPCP8103-H
r
th
– t
w
1000
100
10
①
②
Device mounted on a glass-epoxy
board (a) (Note 2a)
②
①
Device mounted on a glass-epoxy
board (b) (Note 2b)
1
Single-pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
−100
−10
−1
I
max (Pulse)※
D
t =1 ms※
10 ms※
※ : Single-pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
DSS
MAX.
−0.1
−0.1
−1
−10
−100
Drain-source voltage
V
(V)
DS
6
2009-12-10
TPCP8103-H
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
7
2009-12-10
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