TPCP8103-H [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII); 东芝场效应晶体管的硅P沟道MOS型（超高速U- MOSIII ）
| 型号： | TPCP8103-H |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII) |
| 文件： | 总4页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPCP8103-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8103-H
High Efficiency DC／DC Converter Applications
Unit: mm
Notebook PC Applications
Portable Equipment Applications
CCFL Inverter Applications
0.33±0.05
A
M
0.05
5
8
0.475
1
4
B
•
•
•
•
•
•
•
Small footprint due to a small and thin package
High speed switching
B
M
0.05
0.65
2.9±0.1
A
Small gate charge: Q
= 6.5 nC (typ.)
SW
0.8±0.05
Low drain-source ON-resistance: R
= 31 mΩ (typ.)
DS (ON)
S
0.025
+0.1
S
0.28
0.17±0.02
-0.11
High forward transfer admittance: |Y | = 10 S (typ.)
fs
Low leakage current: I
= 10 μA (max) (V
= -40V)
+0.13
-0.12
DSS
DS
1.12
1.12
Enhancement mode: V = -0.8 to -2.0 V (V
= -10 V, I = -1mA)
D
th
DS
+0.13
-0.12
+0.1
-0.11
0.28
1．Source
2．Source
3．Source
4．Gate
5．Drain
6．Drain
7．Drain
8．Drain
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
JEDEC
JEITA
―
―
V
-40
-40
V
V
V
DSS
V
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
DGR
GS
V
±20
-4.8
-19.2
GSS
TOSHIBA
2-3V1K
DC
(Note 1)
I
D
Weight: 0.017 g (typ.)
Drain current
A
Pulsed (Note 1)
I
DP
Circuit Configuration
Drain power dissipation
Drain power dissipation
(t = 5 s)
(Note 2a)
(t = 5 s)
P
1.68
0.84
W
W
D
D
8
7
5
6
P
(Note 2b)
Single-pulse avalanche energy
(Note 3)
E
10.7
-4.8
0.09
mJ
A
AS
Avalanche current
I
AR
Repetitive avalanche energy
E
mJ
AR
(Tc=25℃) (Note 4)
T
T
150
°C
°C
Channel temperature
ch
2
1
4
3
−55 to 150
Storage temperature range
stg
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
8103H
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.
Lot No.
1
2007-06-22
TPCP8103-H
Thermal Characteristics
Characteristic
Symbol
Max
74.4
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
th (ch-a)
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
R
148.8
°C/W
(t = 5 s)
(Note 2b)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
V
DD
= -24 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I
= -4.8A
AR
ch
G
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2
2007-06-22
TPCP8103-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
±10
-10
⎯
μA
μA
GSS
GS
DS
DS
Drain cutoff current
I
= -40 V, V
DSS
GS
V
V
I
I
= -10 mA, V
= -10 mA, V
= 0 V
-40
-20
-0.8
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
Gate threshold voltage
V
V
= −20 V
⎯
⎯
V
V
V
V
V
= -10 V, I = -1 mA
⎯
-2.0
54
40
⎯
th
DS
GS
GS
DS
D
= -4.5 V, I = -2.4 A
42
D
Drain-source ON-resistance
R
mΩ
S
DS (ON)
= -10 V, I = -2.4 A
⎯
31
D
Forward transfer admittance
Input capacitance
|Y |
fs
= -10 V, I = -2.4 A
5
10
D
C
C
⎯
800
115
165
⎯
iss
V
= -10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
Rise time
t
I
=−2.4A
D
⎯
⎯
⎯
6.5
12.5
9
⎯
⎯
⎯
r
V
GS
−10 V
出力
Turn-on time
Switching time
t
on
ns
Fall time
t
f
∼
V
−20 V
DD
<
Duty 1%, t = 10 μs
w
Turn-off time
t
⎯
⎯
⎯
37
19
11
⎯
⎯
⎯
off
∼
V
-32 V, V
= -10 V,
= -5 V,
DD
GS
GS
I
= -4.8 A
D
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
D
-32 V, V
DD
= -4.8 A
I
nC
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Q
Q
⎯
⎯
⎯
1.5
5.5
6.5
⎯
⎯
⎯
gs1
∼
V
-32 V, V
= -10 V,
DD
= -4.8 A
GS
Q
gd
I
D
SW
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
-19.2
1.2
A
V
DRP
V
I
= −4.8 A, V
= 0 V
GS
DSF
DR
3
2007-06-22
TPCP8103-H
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
4
2007-06-22
相关型号：
TPCP8103-H_09
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
TOSHIBA
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