TLP251(TP1) [TOSHIBA]
Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, DIP-8;
| 型号： | TLP251(TP1) |
| 厂家： | 
TOSHIBA |
| 描述： | Optocoupler - IC Output, 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, DIP-8 输出元件 光电 |
| 文件： | 总8页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP251
TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
TLP251
Inverter For Air Conditionor
Unit in mm
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
l Input threshold current: I =5mA(max.)
F
l Supply current (I ): 11mA(max.)
l Supply voltage (V ): 10−35V
CC
CC
TOSHIBA
Weight: 0.54g
11−10C4
l Output current (I ): ±0.4A(max.)
O
l Switching time (t ): 1µs(max.)
/ t
pLH pHL
l Isolation voltage: 2500Vrms(min.)
l UL recognized: UL1577, file no.E67349
Pin Configuration (top view)
1
8
7
6
Schematic
2
3
I
CC
V
CC
8
I
F
(T 1)
r
4
5
2
3
V
F
6
1 : N.C.
V
O
2 : Anode
3 : Cathode
4 : N.C.
I
O
(T 2)
r
GND
5 : Gnd
5
6 : V (Output)
O
7 : N.C.
8 : V
CC
A 0.1µF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
Truth Table
Tr1
Tr2
Input
LED
On
Off
On
Off
Off
On
1
2002-09-25
TLP251
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
20
Unit
mA
Forward current
I
F
Forward current derating
∆I / ∆Ta
- 0.36
mA / °C
A
F
(Ta ≥ 70°C)
Peak transient forward
current
I
1
FPT
(Note 1)
Reverse voltage
V
5
V
R
Junction temperature
“H” peak output current
T
125
°C
j
(P ≤ 2.0µs, f ≤ 15kHz)
I
- 0.4
A
A
W
OPH
(Note 2)
(Note 2)
“L” peak output current
(P ≤ 2.0µs, f ≤ 15kHz)
W
I
0.4
OPL
(Ta ≤ 70°C)
35
24
35
24
Output voltage
Supply voltage
V
V
O
(Ta = 85°C)
(Ta ≤ 70°C)
(Ta = 85°C)
V
V
CC
Output voltage derating
∆V / ∆Ta
- 0.73
- 0.73
V / °C
V / °C
O
(Ta ≥ 70°C)
Supply voltage derating
∆V / ∆Ta
CC
(Ta ≥ 70°C)
Junction temperature
T
f
125
25
°C
kHz
°C
j
Operating frequency
(Note 3)
Operating temperature range
Storage temperature range
Lead soldering temperature(10s)
Isolation voltage (AC, 1min.,
R.H.≤ 60%)
T
-20~85
-55~125
260
opr
T
°C
stg
sol
T
°C
BV
2500
Vrms
S
(Note 4)
(Note 1) Pulse width P ≤ 1µs, 300pps
W
(Note 2) Expornential waveform
(Note 3) Expornential waveform, I
≤ -0.25A(≤ 2.0µs), I
≤ +0.25A(≤2.0µs)
OPL
OPH
(Note 4) Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6,
7 and 8 shorted together.
(Note 5) A ceramic capacitor(0.1µF)should be connected from pin 8 to pin 5 to stabilize the
operation of the high gain linear ampifier. Failure to provide the bypassing may impair the
swiching property.The total lead length between capacitor and coupler should not
exceed 1cm.
2
2002-09-25
TLP251
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, on
I
7
0
10
mA
V
8
F(ON)
Input voltage, off
Supply voltage
V
0.8
―
―
F(OFF)
V
10
30
70
20
85
V
CC
Peak output current
I
/ I
±0.1
A
―
―
OPH OPL
Operating temperature
T
-20
°C
25
opr
Electrical Characteristics (Ta = −20~70°C, unless otherwise specified)
Test
Characteristic
Symbol
Cir-
Test Condition
Min.
Typ.*
Max.
Unit
cuit
Input forward voltage
V
―
―
I
I
= 10 mA , Ta = 25°C
= 10 mA
―
―
1.6
1.8
V
F
F
F
Temperature coefficient of
forward voltage
∆V / ∆Ta
-2.0
―
mV / °C
F
Input reverse current
I
―
―
V
= 5V, Ta = 25°C
R
―
―
―
10
µA
pF
R
Input capacitance
C
V = 0 , f = 1MHz , Ta = 25°C
45
250
T
I
= 10mA
= 4V
=0
F
“H” level
I
3
-0.1
-0.25
―
OPH
V
=30V
V
-
CC
Output current
Output voltage
A
V
(*1)
I
F
“L” level
“H” level
I
2
4
5
0.1
0.2
―
OPL
V
= 2.5V
6-5
V
= +15V, V
R = 200Ω, I = 5mA
= -15V
EE1
CC1
L
V
OH
11
13.2
―
F
V
= +15V, V
R = 200Ω, V = 0.8V
= -15V
EE1
CC1
L
V
“L” level
“H” level
OL
―
-14.5
-12.5
F
V
= 30V, I = 10mA
F
CC
―
―
―
7.5
―
8
―
11
―
I
―
Ta = 25°C
CCH
V
V
= 30V, I = 10mA
F
CC
mA
mA
Supply current
= 30V, I = 0mA
CC
F
“L” level
“Output
I
―
―
Ta = 25°C
CCL
V
= 30V, I = 0mA
―
―
―
11
5
CC
F
Threshould input
current
V
= +15V, V
R = 200Ω, V > 0V
= -15V
CC1
L
EE1
I
FLH
1.2
L → H”
O
“Output
H → L”
Threshold input
voltage
V
= +15V, V
= -15V
CC1
L
EE1
V
―
―
―
FLH
0.8
10
―
V
V
―
―
―
35
R = 200Ω, V < 0V
O
Supply voltage
V
CC
Capacitance
(input-output)
Vs = 0 , f = 1MHz
Ta = 25℃
C
s
pF
1.0
2.0
Vs = 500V, Ta = 25℃
R.H. ≤ 60%
12
14
R
s
―
1×10
Ω
Resistance (input-output)
* All typical values are at Ta=25°C
10
―
(*1): Duration of I time ≤ 50µs
O
3
2002-09-25
TLP251
Switching Characteristics (Ta = −20~70°C, unless otherwise specified)
Test
Characteristic
Symbol
Cir-
Test Condition
Min.
Typ.*
Max.
Unit
µs
cuit
Propagation
delay time
L→H
H→L
t
t
―
―
―
―
0.25
0.25
―
1.0
1.0
―
pLH
pHL
I
V
= 8mA
F
CC1
= +15V, V
= -15V
EE1
6
Output rise time
Output fall time
t
t
r
R = 200 Ω
L
―
―
f
Common mode transient
immunity at high level
output
V
V
= 600V, I = 8mA,
F
CM
CC
C
7
7
-5000
―
―
―
―
V / µs
V / µs
MH
= 30V, Ta = 25℃
Common mode transient
immunity at low level
output
V
V
= 600V, I = 0mA,
F
= 30V, Ta = 25℃
CM
CC
C
5000
ML
*All typical values are at Ta=25℃
4
2002-09-25
TLP251
Test Circuit 1:
Test Circuit 2: I
OPL
8
1
1
8
5
0.1µF
V
CC
A
I
OPL
4
4
V
6-5
Test Circuit 3: I
Test Circuit 4: V
OPH
OH
8
8
1
1
V
V
CC1
CC
0.1µF
V
0.1µF
V
I
I
8-6
F
F
R
L
A
V
OH
I
OPH
4
4
V
EE1
Test Circuit 5: V
OL
8
1
V
CC1
0.1µF
V
V
F
R
L
V
OL
4
V
EE1
5
2002-09-25
TLP251
Test Circuit 6: t
t
t t
pLH, pHL, r, f
8
I
F
t
r
t
f
I
F
0.1µF
V
V
CC1
V
80%
OH
O
R
L
V
GND
O
80%
V
OL
t HL
p
t LH
p
100Ω
V
EE1
Test Circuit 7: C
C
MH, ML
8
1
I
0.1µF
F
SW
V
CC
A
B
V
O
4
V
CM
+
-
600V
90%
V
480(V)
t (µs)
r
CM
10%
C
C
=
ML
t
t
f
r
SW: A(I = 8mA)
F
480(V)
t (µs)
f
=
C
MH
MH
26V
V
O
3V
C
HL
SW: B(I = 0)
F
CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be
sustained with the output voltage in the low (high) state.
6
2002-09-25
TLP251
I
– V
∆V /∆V – I
F F F
F
F
100
－2.6
－2.4
－2.2
－2.0
－1.8
Ta = 25 °C
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.03
－1.6
－1.4
0.01
1.4
1.8
2.0
100
100
1
1.0
1.2
1.6
0.1
0.3
3
5
10
30
0.5
Forward voltage
V
(V)
Forward current
I
F
(mA)
F
I
– Ta
V
– Ta
F
CC
40
30
20
40
30
20
10
0
10
0
20
60
20
60
0
40
80
0
40
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
I
– Ta
OPH, OPL
0.5
0.4
0.3
0.2
PW ≤ 2.0 µs, f ≤15 KHz
0.1
0
20
60
0
40
80
Ambient temperature Ta (°C)
7
2002-09-25
TLP251
RESTRICTIONS ON PRODUCT USE
000707EBC
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
8
2002-09-25
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