TLP251_07 [TOSHIBA]
GaAГAs Ired & Photo-IC; GaAГAs红外发光二极管和光电IC
| 型号： | TLP251_07 |
| 厂家： | 
TOSHIBA |
| 描述： | GaAГAs Ired & Photo-IC |
| 文件： | 总7页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP251
TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
TLP251
Inverter For Air Conditioner
Unit in mm
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
z Input threshold current: I =5mA(max.)
F
z Supply current (I ): 11mA(max.)
CC
TOSHIBA
11−10C4
z Supply voltage (V ): 10−35V
CC
Weight: 0.54g(typ.)
z Output current (I ): ±0.4A(max.)
O
z Switching time (t
/ t
): 1μs(max.)
pLH pHL
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file no.E67349
z Option(D4)
Pin Configuration (top view)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
1
8
7
6
Highest Permissible Over Voltage
: 4000VPK
2
3
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
4
5
Truth Table
1 : N.C.
5 : GND
6 : V (Output)
Tr1
Tr2
2 : Anode
O
3 : Cathode 7 : N.C.
4 : N.C. 8 : V
Input
LED
On
Off
On
Off
Off
On
CC
I
CC
Schematic
V
CC
8
I
F
(T 1)
r
2
3
V
F
6
V
O
I
O
(T 2)
r
GND
5
A 0.1μF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
1
2007-10-01
TLP251
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
20
Unit
mA
Forward current
I
F
Forward current derating
(Ta ≥ 70°C)
ΔI / ΔTa
− 0.36
1
mA / °C
A
F
Peak transient forward current
(Note 1)
I
FPT
Reverse voltage
V
5
V
R
Junction temperature
“H” peak output current
T
125
°C
j
(P ≤ 2.0μs, f ≤ 15kHz)
I
− 0.4
A
A
W
OPH
(Note 2)
(Note 2)
“L” peak output current
(P ≤ 2.0μs, f ≤ 15kHz)
W
I
0.4
OPL
(Ta ≤ 70°C)
(Ta = 85°C)
(Ta ≤ 70°C)
(Ta = 85°C)
35
24
35
24
Output voltage
Supply voltage
V
V
O
V
V
CC
Output voltage derating
ΔV / ΔTa
− 0.73
− 0.73
V / °C
V / °C
O
(Ta ≥ 70°C)
Supply voltage derating
ΔV
/ ΔTa
CC
(Ta ≥ 70°C)
Junction temperature
T
125
25
°C
kHz
°C
j
Operating frequency
(Note 3)
f
Operating temperature range
Storage temperature range
Lead soldering temperature(10s)
Isolation voltage (AC, 1min.,
R.H.≤ 60%)
T
opr
−20~85
−55~125
260
T
T
°C
stg
°C
sol
BV
2500
Vrms
S
(Note 4)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width P ≤ 1μs, 300pps
W
Note 2: Expornential waveform
Note 3: Expornential waveform, I
OPH
≤ −0.25A(≤ 2.0μs), I ≤ +0.25A(≤2.0μs)
OPL
Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6,
7 and 8 shorted together.
Note 5: A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the
operation of the high gain linear ampifier. Failure to provide the bypassing may impair the
swiching property.The total lead length between capacitor and coupler should not
exceed 1cm.
2
2007-10-01
TLP251
Recommended Operating Conditions
Characteristic
Input current, on
Symbol
Min.
Typ.
Max.
Unit
(Note6)
I
7
0
10
mA
V
8
F(ON)
Input voltage, off
Supply voltage
V
0.8
―
―
F(OFF)
V
10
30
70
20
85
V
CC
Peak output current
I
/ I
±0.1
A
―
―
OPH OPL
Operating temperature
T
opr
−20
°C
25
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 6: Input signal rise time(fall time)<0.5μs.
Electrical Characteristics (Ta = −20~70°C, unless otherwise specified)
Test
Characteristic
Symbol
Cir−
Test Condition
Min.
Typ.*
Max.
Unit
cuit
Input forward voltage
V
―
―
I
I
= 10 mA , Ta = 25°C
= 10 mA
―
―
1.6
1.8
V
F
F
F
Temperature coefficient of forward
voltage
ΔV / ΔTa
−2.0
―
mV / °C
F
Input reverse current
Input capacitance
I
―
―
V
= 5V, Ta = 25°C
R
―
―
―
10
μA
R
C
V = 0 , f = 1MHz , Ta = 25°C
45
250
pF
T
I
V
= 10mA
F
“H” level
I
1
−0.1
−0.25
―
OPH
= 4V
8−6
V
=30V
CC
Output current
A
V
(*1)
I
V
=0
6−5
F
“L” level
“H” level
I
2
3
4
0.1
0.2
13.2
−14.5
―
―
OPL
= 2.5V
V
= +15V, V
= −15V
EE1
CC1
V
OH
11
R = 200Ω, I = 5mA
L
F
Output voltage
“L” level
V
= +15V, V
= −15V
EE1
CC1
V
OL
―
−12.5
R = 200Ω, V = 0.8V
L
F
V
= 30V, I = 10mA
F
CC
―
―
―
―
―
7.5
―
8
―
11
―
11
5
Ta = 25°C
“H” level
I
―
―
CCH
V
V
= 30V, I = 10mA
F
CC
mA
mA
Supply current
= 30V, I = 0mA
CC
F
Ta = 25°C
“L” level
I
CCL
V
V
= 30V, I = 0mA
―
1.2
CC
F
“Output
L → H”
Threshould input
current
= +15V, V
= −15V
CC1
EE1
I
―
―
FLH
R = 200Ω, V > 0V
L
O
“Output
H → L”
Threshold input
voltage
V
= +15V, V
= −15V
CC1
EE1
V
FHL
0.8
10
―
V
V
―
―
―
R = 200Ω, V < 0V
L
O
Supply voltage
V
―
―
35
CC
Capacitance
Vs = 0 , f = 1MHz
C
s
pF
1.0
2.0
(input−output)
Ta = 25℃
Vs = 500V, Ta = 25℃
R.H. ≤ 60%
12
14
R
s
―
1×10
Ω
Resistance (input−output)
10
―
* All typical values are at Ta=25°C
(*1): Duration of I time ≤ 50μs
O
3
2007-10-01
TLP251
Switching Characteristics (Ta = −20~70°C, unless otherwise specified)
Test
Cir−
Characteristic
Symbol
Test Condition
Min.
Typ.*
Max.
Unit
cuit
Propagation
delay time
L→H
H→L
t
t
―
―
―
―
0.25
0.25
―
1.0
1.0
―
pLH
I
= 8mA
F
pHL
V
= +15V, V
= −15V
EE1
5
6
μs
CC1
Output rise time
Output fall time
t
r
R = 200 Ω
L
t
f
―
―
Common mode transient
immunity at high level
output
Common mode transient
immunity at low level
output
V
V
= 600V, I = 8mA,
F
= 30V, Ta = 25℃
CM
CC
C
−5000
―
―
―
―
V / μs
V / μs
MH
V
V
= 600V, I = 0mA,
F
CM
CC
C
5000
ML
= 30V, Ta = 25℃
*All typical values are at Ta=25℃
Test Circuit 1 : I
Test Circuit 2 : I
1
OPH
OPL
8
8
1
V
CC
0.1μF
0.1μF
V
I
8-6
F
V
CC
A
A
I
OPL
I
OPH
4
V
4
6-5
Test Circuit 3 : V
Test Circuit 4 : V
OL
OH
8
8
1
1
V
CC1
V
CC1
0.1μF
0.1μF
I
V
F
F
R
R
V
L
L
V
V
V
OH
OL
4
4
V
EE1
V
EE1
4
2007-10-01
TLP251
Test Circuit 5: t
t
t t
pLH, pHL, r, f
8
I
F
t
r
t
f
I
F
0.1μF
V
CC1
V
80%
V
OH
O
R
L
V
GND
O
80%
V
OL
t HL
p
t LH
p
100Ω
V
EE1
Test Circuit 6: C
C
MH, ML
8
1
I
F
0.1μF
SW
V
CC
A
B
V
O
4
V
CM
+
-
600V
90%
V
480(V)
CM
10%
C
C
=
=
ML
t
t
f
r
t (μs)
r
SW: A(I = 8mA)
F
480(V)
C
MH
MH
t (μs)
f
26V
V
O
3V
C
HL
SW: B(I = 0)
F
CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be
sustained with the output voltage in the low (high) state.
5
2007-10-01
TLP251
I
– V
ΔV /ΔV – I
F F F
F
F
100
－2.6
－2.4
－2.2
－2.0
－1.8
Ta = 25 °C
50
30
10
5
3
1
0.5
0.3
0.1
0.05
0.03
－1.6
－1.4
0.01
1.0
1.4
1.8
2.0
100
100
1
1.2
1.6
0.1
0.3
3
5
10
30
0.5
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Ta
V
– Ta
F
CC
40
30
20
40
30
20
10
0
10
0
20
20
60
60
0
40
0
100
80
40
80
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
I
– Ta
OPH, OPL
0.5
0.4
0.3
0.2
PW ≤ 2.0 μs, f ≤15 KHz
0.1
0
20
60
0
40
80
Ambient temperature Ta (°C)
6
2007-10-01
TLP251
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-10-01
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