TLN212(F) [TOSHIBA]
Infrared LED, 3.6 mm, 1 ELEMENT, INFRARED LED, 870 nm, LEAD FREE PACKAGE-2;
| 型号： | TLN212(F) |
| 厂家： | 
TOSHIBA |
| 描述： | Infrared LED, 3.6 mm, 1 ELEMENT, INFRARED LED, 870 nm, LEAD FREE PACKAGE-2 红外LED 光电 二极管 |
| 文件： | 总4页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLN212(F)
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN212(F)
Lead Free Product
Infrared Light−Emission Diode For Still Camera
Unit: mm
Light Source For Auto Focus
•
Optical radiation of current confining LED chip is condensed by a
resin lens.
•
•
•
•
High output
Effective emission diameter of 388 × 296µm
Optical output efficiently radiated in solid angle of 1.136sr
Can be operated at V
= 3V (which is equal to is two cells)
CC
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
(Note 2)
I
50
800
mA
mA
V
F
TOSHIBA
―
Pulse forward current
Reverse voltage
I
FP
Weight: 0.18g(typ.)
V
1
R
Operating temperature
Storage temperature
T
−25~60
−40~90
°C
°C
opr
T
stg
(Note 1): Permissible value for acceptance inspection / characteristic
test and is guaranteed for actual application
(Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%,
power applied for 0.1s paused for 0.4s
1
2
16
1
I
= 0.8A
FP
0.22ms
1.56ms
28.48ms
400ms
428.48ms
1
2004-01-06
TLN212(F)
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
I
= 50mA
―
―
―
―
―
1.35
1.67
―
―
1.85
100
―
V
V
F
F
Pulse forward voltage
Reverse current
V
= 300mA, t = 10ms
= 1V
R
FP
FP
I
R
V
µA
X
Y
Half value of peak
Half value of peak
(Note 1)
(Note 1)
388
296
Effective emission spot
diameter
µm
―
I
= 300mA, t = 10ms
FP
Radiation flux
(Note)
φe
8
12
―
mW
(Note 2)
1
2
Half value angle
θ
I
F
I
F
I
F
= 50mA
= 50mA
= 50mA
―
850
―
±35
870
40
―
900
―
°
Peak emission wavelength
Spectral line half width
λ
nm
nm
P
∆λ
(Note1): The direction of X, Y are in the following diagram.
The shaded area represents the emitting surface.
Y
LED chip
X
(Note 2): Luminous radiation output effective angle = ±25 degree
Precaution
Please be careful of the followings.
1. Soldering temperature: 260°C max
Soldering time: 5s max
(Soldering must be performed 2mm from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. The TLN212(F) for a still camera AF use only. Please do not use this device except for a still camera.
2
2004-01-06
TLN212(F)
I
– Ta
φ
e
– I
FP
(typ.)
F
60
40
20
0
40
30
20
10
0
Ta = −20°C
25°
60°
80
800
0
20
40
60
0
200
400
600
(mA)
Ambient temperature Ta (°C)
Pulse forward current
I
FP
Wavelength Characteriistic
I
– V
(typ.)
(typ.)
FP
FP
1.0
0.8
0.6
0.4
0.2
0
800
600
400
200
0
I
= 50mA
F
Ta = 25°C
Ta = 60°
25°
−20°
920
940
820
880
Wave length
900
0
1
2
3
840
860
λ
(nm)
Pulse forward voltage
V
(V)
FP
Radiation Pattern
(typ.)
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
60°
70°
80°
90°
50°
60°
70°
80°
90°
1.0
0.4
0.6
0.8
0
0.2
Relative intensity
3
2004-01-06
TLN212(F)
RESTRICTIONS ON PRODUCT USE
030619EAC
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
4
2004-01-06
相关型号：
©2020 ICPDF网 联系我们和版权申明