TLN217(F) [TOSHIBA]
Infrared LED, 3.6 mm, 1 ELEMENT, INFRARED LED, 870 nm, LEAD FREE PACKAGE-2;
| 型号： | TLN217(F) |
| 厂家： | 
TOSHIBA |
| 描述： | Infrared LED, 3.6 mm, 1 ELEMENT, INFRARED LED, 870 nm, LEAD FREE PACKAGE-2 光电 半导体 |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLN217(F)
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN217(F)
Lead Free Product
Unit: mm
Infrared Light-Emitting Diode for Still Camera
Light Source for Auto Focus
The TLN217(F) is a high output infrared LED employing a new
structure of GaAℓAs current confining LED chip.
•
Optical radiation of current confining LED chip is condensed by clear
resin lens.
•
•
•
•
High output and low forward voltage
Peak emission wavelength: λp = 870 nm (typ.)
Spectral line half width: ∆λ = 35 nm (typ.)
Effective emission diameter: 210 ×466 µm (typ.)
TOSHIBA
Weight: 0.18 g (typ.)
―
Maximum Ratings
=
(Ta 25°C)
Characteristics
Symbol
(Note 1)
Rating
Unit
Pulse forward current
Reverse voltage
I
1.1
1
A
V
FP
V
R
Operating temperature
Storage temperature
T
−25 to 60
−40 to 90
°C
°C
opr
T
stg
Note 1: Total 30000 cycles (total power applied time is 7.8 h). One cycle takes 137-ms power applied time and
800-ms pause time under the drive condition of 2.6 kHz frequency and 13.2% duty cycle.
1
2
360
1
Total 30000 cycles (t = 7.8 h)
I
FP
OFF
50 µs
330 µs
One cycle = 937 ms
1
2004-01-29
TLN217(F)
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Pulse forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
= 300 mA, t = 10 ms
= 1 V
R
⎯
⎯
⎯
⎯
12
1.6
⎯
1.75
100
⎯
V
FP
FP
Reverse current
I
R
V
µA
X
Y
Half value of peak
Half value of peak
(Note 2)
(Note 2)
(Note 3)
466
210
17
Effective emission spot size
µm
⎯
Radiation flux
φe
I
I
= 300 mA, t = 10 ms
⎯
mW
°
FP
1
θ
Half value angle
= 50 mA
⎯
±32.5
⎯
F
2
Peak emission wavelength
Spectral line half width
λp
I
I
= 50 mA
= 50 mA
850
870
35
900
nm
nm
F
F
∆λ
⎯
⎯
Note 2: The directions of X and Y are in the following diagram.
The shaded area represents the emitting surface.
Y
(LED chip)
X
Note 3: Luminous radiation output to effective angle = ±25°
Precaution
•
Soldering temperature: 260°C (max)
Soldering time: 5 s (max)
(Soldering must be performed 2 mm from the bottom of the package.)
•
•
When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be
performed after the leads have been formed.
The TLN217(F) is intended for a camera AF use only. Please do not use this device except for a camera.
2
2004-01-29
TLN217(F)
φe – I
(typ.)
I
– V
FP
(typ.)
FP
FP
60
50
40
30
20
10
0
800
600
400
200
0
Ta = −20°C
25
60
Ta = 60°C
25
−20
0
200
400
600
800
0
1
2
3
Pulse forward current
I
(mA)
Pulse forward voltage
V
(V)
FP
FP
Wavelength characteristic
Radiation pattern
(typ.)
1
0.8
0.6
0.4
0.2
0
Ta = 25°C
I
= 50 mA
F
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0
0.2 0.4 0.6 0.8 1.0
Relative intensity
780
800
820
840
860
880
(nm)
900
920
940
Wavelength
λ
3
2004-01-29
TLN217(F)
RESTRICTIONS ON PRODUCT USE
030619EAC
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
4
2004-01-29
相关型号：
©2020 ICPDF网 联系我们和版权申明