TLN217 [TOSHIBA]
Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus; 红外发光二极管的相机光源自动对焦
| 型号： | TLN217 |
| 厂家： | 
TOSHIBA |
| 描述： | Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLN217
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
Preliminary
TLN217
Infrared Light-Emitting Diode for Still Camera
Light Source for Auto Focus
Unit: mm
The TLN217 is a high output infrared LED employing a new structure
of GaAℓAs current confining LED chip.
·
Optical radiation of current confining LED chip is condensed by clear
resin lens.
·
·
·
·
High output and low forward voltage
Peak emission wavelength: λp = 870 nm (typ.)
Spectral line half width: ∆λ = 35 nm (typ.)
Effective emission diameter: 210 ×466 µm (typ.)
Maximum Ratings (Ta = 25°C)
JEDEC
―
Characteristics
Symbol
(Note 1)
Rating
Unit
JEITA
―
―
Pulse forward current
Reverse voltage
I
1.1
1
A
V
FP
TOSHIBA
V
R
Weight: 0.18 g (typ.)
Operating temperature
Storage temperature
T
-25 to 60
-40 to 90
°C
°C
opr
T
stg
Note 1: Total 30000 cycles (total power applied time is 7.8 h). One cycle takes 137-ms power applied time and
800-ms pause time under the drive condition of 2.6 kHz frequency and 13.2% duty cycle.
1
2
360
1
Total 30000 cycles (t = 7.8 h)
I
FP
OFF
50 ms
330 ms
One cycle = 937 ms
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TLN217
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Pulse forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
= 300 mA, t = 10 ms
= 1 V
R
¾
¾
¾
¾
12
1.6
¾
1.75
100
¾
V
FP
FP
Reverse current
I
V
mA
R
X
Y
Half value of peak
Half value of peak
(Note 2)
(Note 2)
(Note 3)
466
210
17
Effective emission spot size
mm
¾
Radiation flux
fe
I
I
= 300 mA, t = 10 ms
¾
mW
°
FP
1
q
Half value angle
= 50 mA
¾
±32.5
¾
F
2
Peak emission wavelength
Spectral line half width
lp
I
I
= 50 mA
= 50 mA
850
870
35
900
nm
nm
F
F
Dl
¾
¾
Note 2: The directions of X and Y are in the following diagram.
The shaded area represents the emitting surface.
Y
(LED chip)
X
Note 3: Luminous radiation output to effective angle = ±25°
Precaution
·
Soldering temperature: 260°C (max)
Soldering time: 5 s (max)
(Soldering must be performed 2 mm from the bottom of the package.)
·
·
When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be
performed after the leads have been formed.
The TLN217 is intended for a camera AF use only. Please do not use this device except for a camera.
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TLN217
fe – I
(typ.)
I
– V
FP
(typ.)
FP
FP
60
50
40
30
20
10
0
800
600
400
200
0
Ta = -20°C
25
60
Ta = 60°C
25
-20
0
200
400
600
800
0
1
2
3
Pulse forward current
I
(mA)
Pulse forward voltage
V
(V)
FP
FP
Wavelength characteristic
Radiation pattern
(typ.)
Ta = 25°C
1
0.8
0.6
0.4
0.2
0
I
= 50 mA
F
Ta = 25°C
0°
10°
10°
20°
20°
30°
30°
40°
40°
50°
50°
60°
70°
60°
70°
80°
90°
80°
90°
0
0.2 0.4 0.6 0.8 1.0
Relative intensity
780
800
820
840
860
880
(nm)
900
920
940
Wavelength
l
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TLN217
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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