TIM0910-20 [TOSHIBA]
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power;
| 型号： | TIM0910-20 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总4页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TIM0910-20
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
P1dB=43.0dBm at 9.5GHz to 10.5GHz
HIGH GAIN
G1dB=7.0dB at 9.5GHz to 10.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
SYMBOL
P1dB
CONDITION
UNIT MIN. TYP. MAX.
dBm 42.0 43.0
VDS= 9V
f = 9.5 – 10.5GHz
G1dB
dB
6.0
7.0
I
(RF ) 4.5 A
DS off
IDS
ηadd
∆Tch
A
%
6.5
27
7.5
Power Added Efficiency
Channel Temperature Rise
VDS×IDS×Rth(c-c)
°C
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
VDS= 2V
IDS= 5.5A
UNIT MIN. TYP. MAX.
S
16
Pinch-off Voltage
VGSoff VDS= 2V
IDS= 50mA
V
-0.3
-5
-0.7
-1.1
Saturated Drain Current
IDSS
VDS= 2V
VGS= 0V
A
11.0 13.0
Gate-Source Breakdown
Voltage
VGSO IGS= -600µA
V
Thermal Resistance
Rth(c-c) Channel to Case
°C/W
1.6
2.1
The X/Ku-Band 20W device(TIM0910-20) is a high power GaAs FET that has high transconductance (gm). VGS for setting IDS
properly should be low. Therefore, there is a possibility that the positive gate current (IgRF) flows, when output power is as high as
P1dB. IgRF and/or IDS fluctuate sharply when the RF input power level or VDS changes abruptly. Please give appropriate attention to
the bias circuit design, not to cause the induced voltage that is generated by the inductance and so on.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Revised Aug. 2000
TIM0910-20
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
13.0
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
PT
W
60
Tch
°C
°C
175
Tstg
-65 +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
4-R3.0
c
c Gate
d
d Source
e Drain
d
e
0.6±0.15
17.0±0.3
21.5 MAX.
11.0 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
2
TIM0910-20
RF PERFORMANCES
Output Power vs. Frequency
46
VDS= 9 V
IDS 6.5 A
Pin= 36 dBm
45
44
43
42
41
8.9 9.1 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 10.9
Frequency (GHz)
Output Power vs. Input Power
45
44
43
42
41
40
39
38
37
36
90
80
70
60
50
40
30
20
10
0
f=10.5 GHz
VDS= 9 V
IDS 6.5 A
Po
ηadd
29
31
33
35
37
39
Pin(dBm)
3
TIM0910-20
POWER DISSIPATION vs. CASE TEMPERATURE
100
80
60
40
20
0
0
40
80
120
160
200
Tc(°C)
4
相关型号：
TIM1011-2UL
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
TOSHIBA
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