TIM0910-4 [TOSHIBA]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET
| 型号： | TIM0910-4 |
| 厂家： | 
TOSHIBA |
| 描述： | MICROWAVE POWER GaAs FET |
| 文件： | 总4页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM0910-4
TECHNICAL DATA
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
P1dB=36.5dBm at 9.5GHz to 10.5GHz
HIGH GAIN
G1dB=7.5dB at 9.5GHz to 10.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 35.5 36.5
⎯
VDS= 9V
f= 9.5 to 10.5GHz
Power Gain at 1dB Gain
Compression Point
G1dB
dB
6.5
7.5
⎯
Drain Current
IDS
ηadd
ΔTch
A
1.7
24
⎯
2.2
⎯
70
⎯
⎯
⎯
Power Added Efficiency
Channel Temperature Rise
%
C
°
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
UNIT MIN. TYP. MAX.
Transconductance
gm
mS
1200
-3.5
4.0
⎯
-2.0
⎯
⎯
-5.0
⎯
IDS= 2.0A
VDS= 3V
IDS= 60mA
VDS= 3V
VGS= 0V
Pinch-off Voltage
VGSoff
IDSS
V
Saturated Drain Current
A
Gate-Source Breakdown
Voltage
VGSO
Rth(c-c)
IGS= -60μA
V
-5
⎯
⎯
C/W
Thermal Resistance
Channel to Case
2.9
3.5
°
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
TIM0910-4
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
5.2
Total Power Dissipation (Tc= 25 C)
PT
W
42.8
°
C
Channel Temperature
Storage Temperature
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (2-9D1B)
Unit: mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM0910-4
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=9V
IDS≅1.7A
Pin=29.0dBm
37
36
35
34
33
9.4
9.8
10.2
10.6
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
39
38
37
36
35
34
33
32
31
30
freq.=10.5GHz
VDS=9V
IDS≅1.7A
70
60
50
40
30
20
10
0
22
24
26
28
30
Pin(dBm)
3
TIM0910-4
Power Dissipation(PT) vs. Case Temperature(Tc)
50
40
30
20
10
0
200
0
40
80
120
160
Tc( C )
°
4
相关型号：
TIM1011-2UL
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
TOSHIBA
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