TIM0910-5 [TOSHIBA]
MICROWAVE SEMICONDUCTOR TECHNICAL DATA; 微波半导体技术资料
| 型号： | TIM0910-5 |
| 厂家： | 
TOSHIBA |
| 描述： | MICROWAVE SEMICONDUCTOR TECHNICAL DATA |
| 文件： | 总4页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM0910-5
TECHNICAL DATA
FEATURES
n HIGH POWER
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
P1dB=37.5dBm at 9.5GHz to 10.5GHz
n HIGH GAIN
G1dB=7.0dB at 9.5GHz to 10.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 37.0 37.5
¾
G1dB
dB
6.0
7.0
2.0
¾
VDS= 9V
f= 9.5 to 10.5GHz
IDS1
DG
A
dB
%
2.5
¾
¾
¾
¾
Gain Flatness
±0.8
¾
Power Added Efficiency
Channel Temperature Rise
hadd
DTch
25
¾
¾
C
°
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
80
Recommended gate resistance(Rg) : Rg= 150 W(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
UNIT MIN. TYP. MAX.
Transconductance
gm
mS
1500
-3.0
5.0
¾
¾
-1.5
¾
¾
-4.5
¾
IDS= 2.4A
Pinch-off Voltage
VGSoff
IDSS
VDS= 3V
IDS= 72mA
V
=
Saturated Drain Current
VDS 3V
A
VGS= 0V
Gate-Source Breakdown
Voltage
VGSO
Rth(c-c)
IGS= -72mA
V
-5
¾
Thermal Resistance
Channel to Case
C/W
°
3.0
3.7
¾
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
TIM0910-5
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
UNIT
V
RATING
V
DS
15
-5
Gate-Source Voltage
Drain Current
VGS
IDS
PT
V
A
5.7
Total Power Dissipation (Tc= 25 C)
W
40.5
°
C
Channel Temperature
Storage Temperature
Tch
Tstg
°
°
175
C
-65 to +175
PACKAGE OUTLINE (2-9D1B)
Unit: mm
4-R2.4
(1)
(1) Gate
(2) Source
(3) Drain
(2)
(2)
(3)
0.5±0.15
13.0±0.3
17.0 MAX
8.5 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM0910-5
RF PERFORMANCES
Output Power (Pout) vs. Frequency
VDS=9V
IDS@2.0A
Pin=30.5dBm
38
37
36
35
9.5
10.0
10.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
41
40
39
38
37
36
35
34
33
32
freq.=10.5GHz
VDS=9V
IDS@2.0A
70
60
50
40
30
20
10
0
Pout
hadd
24
26
28
30
32
34
Pin(dBm)
3
TIM0910-5
Power Dissipation(PT) vs. Case Temperature(Tc)
40
30
20
10
0
200
0
40
80
120
160
Tc( C )
°
4
相关型号：
TIM1011-2UL
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
TOSHIBA
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