HN7G08FE [TOSHIBA]
General-Purpose Amplifier Applications; 通用运算放大器应用
| 型号： | HN7G08FE |
| 厂家： | 
TOSHIBA |
| 描述： | General-Purpose Amplifier Applications |
| 文件： | 总6页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN7G08FE
TOSHIBA Multichip Discrete Device
HN7G08FE
Unit: mm
General-Purpose Amplifier Applications
Switching and Muting Switch Applications
Q1
Low saturation voltage: V
(1) = −15 mV (typ.)
CE (sat)
@I = −10 mA/I = −0.5 mA
C
B
Large collector current: I = −400 mA (max)
C
Q1: 2SA1955F
Q2: RN1106F
(E1)
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
(B1)
(C2)
(E2)
(B2)
(C1)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
6. COLLECTOR1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
−15
−12
−5
V
V
CBO
CEO
EBO
JEDEC
―
V
JEITA
I
−400
−50
mA
mA
―
C
Base current
I
B
TOSHIBA
2-2J1E
Weight: 0.003 g (typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
50
50
5
V
V
CBO
CEO
EBO
V
I
100
mA
C
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
P *
Rating
Unit
Collector power dissipation
Junction temperature
100
150
mW
°C
C
T
j
Storage temperature range
T
stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1
2007-11-01
HN7G08FE
Q1 Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= −15 V, I = 0
Min
Typ.
Max
Unit
Collector cutoff current
Emitter cutoff current
I
―
V
V
―
―
―
―
−100
−100
nA
nA
CBO
CB
EB
E
I
―
=− 5 V, I = 0
C
EBO
DC current gain
(Note)
h
―
V
=− 2 V, I =− 10 mA
300
―
1000
FE
CE
C
V
V
―
―
―
―
―
I
I
I
=− 10 mA, I =− 0.5 mA
―
―
―
―
―
−15
−30
CE(sat) (1)
CE(sat) (2)
C
C
C
B
Collector-emitter
saturation voltage
mV
=− 200 mA, I =− 10 mA
−110 −250
−0.87 −1.2
B
Base-emitter saturation voltage
Transition frequency
V
=− 200 mA, I =− 10 mA
V
BE(sat)
B
f
V
V
=− 2 V, I =− 10 mA
130
4.2
―
―
MHz
pF
T
CE
CB
C
Collector output capacitance
C
=− 10 V, I = 0, f = 1 MHz
E
ob
Turn-on time
t
―
―
―
⎯
⎯
⎯
40
280
65
⎯
⎯
⎯
on
Switching time
ns
Storage time
Fall time
t
stg
t
f
I
= −I = 5 mA
B2
B1
Note: hFE classification A(A): 300~600, B(B): 500~1000
) marking symbol
(
Q2 Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Collector cutoff current
Emitter cutoff current
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
I
I
―
―
―
V
V
V
V
―
―
―
―
―
100
500
CBO
CEO
CB
CE
EB
CE
E
nA
= 50 V, I = 0
B
I
= 5 V, I = 0
0.074
0.138
mA
EBO
C
DC current gain
h
―
―
= 5 V, I = 10 mA
80
―
―
FE
C
Collector-emitter saturation voltage
V
V
I
= 5 mA, I = 0.25 mA
―
0.1
0.3
V
V
CE(sat)
C
B
Input voltage (ON)
V
―
V
= 0.2 V, I = 5 mA
0.7
―
1.3
I (ON)
CE
C
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
―
―
―
―
―
V
V
V
= 5 V, I = 0.1 mA
0.5
―
―
250
3
0.8
―
V
MHz
pF
I (OFF)
CE
CE
CB
C
f
= 10 V, I = 5 mA
C
T
C
= 10 V, I = 0, f = 1 MHz
E
―
―
ob
―
―
3.29
0.09
4.7
0.1
6.11
0.11
kΩ
R1
R1/R2
Resistor ratio
Marking
Equivalent Circuit (Top View)
Type Name
hFE Rank
5
6
4
6
5
4
3
Q2
76A
Q1
1
1
2
2
3
2
2007-11-01
HN7G08FE
Q1
IC - VCE
hFE - IC
-0.5
-0.4
-0.3
-0.2
-0.1
10000
1000
100
-6
-5
COMMON EMITTER
VCE = -2V
-4
Ta = 100°C
-3
25
-2
-1
-25
IB=-0.5mA
COMMON EMITTER
Ta = 25°C
-
0
10
-1
-2
-3
-4
-5
-1
-10
-100
-1000
0
-0.1
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
VBE(sat) - IC
-1000
-100
-10
-10
COMMON EMITTER
IC/IB = 20
Ta = 25
COMMON EMITTER
IC/IB = 20
℃
Ta = 100°C
-25
-1
25
-1
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
-0.1
-0.1
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
IC - VBE
Cob - VCB
-1000
100
IE = 0
f = 1MHz
Ta = 25
℃
-100
-10
-1
Ta = 100°C
10
-25
25
COMMON EMITTER
VCE = -2V
1
0
-0.4
-0.8
-1.2
-1.6
-1
-10
-100
-0.1
COLLECTOR-BASE VOLTAGE VCB (V)
BASE-EMITTER VOLTAGE VBE (V)
3
2007-11-01
HN7G08FE
Q2
4
2007-11-01
HN7G08FE
(Q1, Q2 common)
P * – Ta
C
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta (°C)
*:Total rating
5
2007-11-01
HN7G08FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third
parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01
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