HN7G10FE-A [TOSHIBA]
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2J1A, ES6, 6 PIN, FET General Purpose Small Signal;
| 型号： | HN7G10FE-A |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2J1A, ES6, 6 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN7G10FE
TOSHIBA Multichip Discrete Device
HN7G10FE
Power Management Switch Applications
Unit: mm
Driver Circuit Applications
Interface Circuit Applications
•
•
Q1 (transistor): 2SC5376F equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
15
12
5
V
V
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
Collector-emitter voltage
Emitter-base voltage
Collector current
V
I
400
50
mA
mA
C
6. COLLECTOR
Base current
I
B
JEDEC
―
―
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
JEITA
Characteristic
Drain-source voltage
Symbol
Rating
Unit
TOSHIBA
2-2N1F
V
20
10
50
V
V
DS
Weight: 3mg (typ.)
Gate-source voltage
Drain current
V
GSS
I
mA
D
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Power dissipation
Symbol
Rating
Unit
P (Note 1)
100
150
mW
°C
Junction temperature
T
j
Storage temperature range
T
stg
−55 to 150
°C
Note 1: Total rating
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-11-16
HN7G10FE
Q1 (transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 15 V, I = 0
Min
Typ.
Max
Unit
Collector cutoff current
Emitter cutoff current
DC current gain
I
V
V
⎯
⎯
⎯
⎯
100
100
1000
30
nA
nA
CBO
CB
EB
E
I
= 5 V, I = 0
C
EBO
h
(Note 3) V = 2 V, I = 10 mA
CE
300
⎯
⎯
FE
C
V
V
I
I
I
= 10 mA, I = 0.5 mA
15
CE (sat) (1)
CE (sat) (2)
C
C
C
B
Collector-emitter saturation voltage
Base-emitter saturation voltage
mV
V
= 200 mA, I = 10 mA
⎯
110
0.87
250
1.2
B
V
= 200 mA, I = 10 mA
⎯
BE (sat)
B
Note 3:
h
FE
classification A: 300 to 600, B: 500 to 1000
Q2 (MOSFET) Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= 10 V, V = 0
DS
⎯
20
⎯
0.7
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
⎯
1
μA
V
GSS
GS
Drain-source breakdown voltage
Drain cutoff current
V
I
= 100 μA, V
= 0
= 0
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
⎯
μA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
V
= 3 V, I = 0.1 mA
⎯
1.3
⎯
12
⎯
⎯
⎯
⎯
⎯
th
D
⎪Y ⎪
fs
= 3 V, I = 10 mA
50
mS
Ω
D
R
I
= 10 mA, V = 2.5 V
GS
4
DS (ON)
D
C
V
V
V
V
V
= 3 V, V
= 3 V, V
= 3 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
11.0
3.3
9.3
0.16
0.19
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
DD
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
C
t
Turn-on time
Switching time
= 3 V, I = 10 mA, V
= 0 to 2.5 V
= 0 to 2.5 V
D
GS
GS
μs
Turn-off time
t
= 3 V, I = 10 mA, V
D
off
Switching Time Test Circuit
(a) Switching time test circuit
2.5 V
0
V
= 3 V
90%
DD
Duty ≤ 1%
: t , t < 5 ns
I
D
(b) V
(c) V
IN
2.5 V
0
OUT
V
IN
GS
V
IN
(Z
10%
r f
= 50 Ω)
out
V
DD
Common source
10 μS
10%
OUT
Ta = 25°C
V
IN
V
90%
DS
V
DD
V
DS (ON)
t
t
f
r
t
t
on
off
Marking
Pin Assignment (top view)
Type Name
6
5
4
6
5
4
3
hFE Rank
78A
2
Q2
Q1
1
2
3
1
2
2009-11-16
HN7G10FE
Q1 (Transistor)
I
– V
h
– I
FE C
C
CE
1.0
10000
Common emitter
Common emitter
5000
3000
V
= 2 V
CE
Ta = 25°C
0.8
6
5
1000
Ta = 100°C
4
0.6
0.4
0.2
25
500
300
3
−25
2
100
1
50
30
I
= 0.5 mA
B
10
0.1
0
0
1
2
3
4
5
0.3
1
3
10
30
100
300 1000
Collector-emitter voltage
V
(V)
Collector current
I
C
(mA)
CE
V
– I
V
– I
BE (sat) C
CE (sat)
C
1000
50
30
Common emitter
Common emitter
500
300
I
/I = 20
C B
I
/I = 20
C B
Ta = 25°C
10
100
5
3
50
30
Ta = 100°C
−25
1
10
0.5
0.3
25
5
3
1
0.1
0.1
0.3
1
3
10
30
100
300 1000
0.1
0.3
1
3
10
30
100
300 500
Collector current
I
C
(mA)
Collector current
I
C
(mA)
I
– V
BE
C
ob
– V
C
CB
1000
100
I
= 0 A
E
Common emitter
= 2 V
500
300
f = 1 MHz
Ta = 25°C
V
50
30
CE
100
50
30
10
Ta = 100°C 25
−25
5
3
10
5
3
1
0.1
1
0.0
0.4
0.8
1.2
1.6
0.3
1
3
10
30
100
Base-emitter voltage
V
(V)
Collector-base voltage
V
(V)
BE
CB
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HN7G10FE
Q2 (S-MOS)
4
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HN7G10FE
Q2 (S-MOS)
5
2009-11-16
HN7G10FE
Q1, Q2 Common
P* – Ta
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta (°C)
*:Total rating
6
2009-11-16
HN7G10FE
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
7
2009-11-16
相关型号：
HN7G10FE-B
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2J1A, ES6, 6 PIN, FET General Purpose Small Signal
TOSHIBA
HN809
(低电平)复位逻辑输出。在电源上电、掉电以及监控系统电源电压的变化，产生可靠的电源复位信号，使微处理器产生复位或处理中断事件。 典型工作电流为6μA/5V,2.6μA/3.3V,适合电池供电的仪器、设备，可对5V,3.3V和3V电源电压进行检测。
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HN809 810
(低电平)复位逻辑输出。在电源上电、掉电以及监控系统电源电压的变化，产生可靠的电源复位信号，使微处理器产生复位或处理中断事件。 典型工作电流为6μA/5V,2.6μA/3.3V,适合电池供电的仪器、设备，可对5V,3.3V和3V电源电压进行检测。
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