HN7G10FE-B [TOSHIBA]
TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2J1A, ES6, 6 PIN, FET General Purpose Small Signal;
| 型号： | HN7G10FE-B |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2J1A, ES6, 6 PIN, FET General Purpose Small Signal 晶体 开关 小信号双极晶体管 光电二极管 |
| 文件： | 总7页 (文件大小：499K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN7G10FE
TOSHIBA Multichip Discrete Device
HN7G10FE
Power Management Switch Applications
Unit: mm
Driver Circuit Applications
Interface Circuit Applications
•
•
Q1 (transistor): 2SC5376F equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
15
12
5
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
V
I
400
50
mA
mA
C
Base current
I
B
6. COLLECTOR
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
JEDEC
―
―
V
20
10
50
V
V
JEITA
DS
Gate-source voltage
Drain current
V
GSS
TOSHIBA
2-2J1A
I
mA
D
Weight: 0.003 g (typ.)
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic
Power dissipation
Symbol
(Note 1)
Rating
Unit
P
100
150
mW
°C
C
Junction temperature
T
j
Storage temperature range
T
stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment (top view)
Type Name
FE Rank
6
5
4
h
78A
Q2
Q1
1
2
3
1
2007-11-01
HN7G10FE
Q1 (transistor) Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 15 V, I = 0
Min
Typ.
Max
Unit
Collector cutoff current
Emitter cutoff current
DC current gain
I
V
V
⎯
⎯
⎯
⎯
0.1
0.1
μA
μA
CBO
CB
EB
E
I
= 5 V, I = 0
C
EBO
h
(Note 2) V = 2 V, I = 10 mA
CE
300
⎯
⎯
1000
30
FE
C
V
V
I
I
I
= 10 mA, I = 0.5 mA
15
CE (sat) (1)
CE (sat) (2)
C
C
C
B
Collector-emitter saturation voltage
mV
V
= 200 mA, I = 10 mA
⎯
110
0.87
250
1.2
B
Base-emitter saturation voltage
V
= 200 mA, I = 10 mA
⎯
BE (sat)
B
Note 2:
h
FE
classification A: 300~600, B: 500~1000
Q2 (MOSFET) Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= 10 V, V = 0
DS
⎯
20
⎯
0.7
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
⎯
1
μA
V
GSS
GS
Drain-source breakdown voltage
Drain cutoff current
V
I
= 100 μA, V
= 0
= 0
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
⎯
μA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
V
= 3 V, I = 0.1 mA
⎯
1.3
⎯
12
⎯
⎯
⎯
⎯
⎯
th
D
⎪Y ⎪
fs
= 3 V, I = 10 mA
50
mS
Ω
D
R
I
= 10 mA, V = 2.5 V
GS
4
DS (ON)
D
C
V
V
V
V
V
= 3 V, V
= 3 V, V
= 3 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
11.0
3.3
9.3
0.16
0.19
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
DD
DD
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
C
t
Turn-on time
Switching time
= 3 V, I = 10 mA, V
= 0~2.5 V
= 0~2.5 V
D
GS
GS
μs
Turn-off time
t
= 3 V, I = 10 mA, V
D
off
Switching Time Test Circuit
(a) Switching time test circuit
2.5 V
0
V
= 3 V
90%
DD
I
D
(b) V
(c) V
IN
2.5 V
0
OUT
<
D.U. 1%
V
IN
GS
V
: t , t < 5 ns
10%
IN
r
f
(Z
out
Common source
= 50 Ω)
V
DD
10 μS
10%
OUT
Ta = 25°C
V
IN
V
90%
DS
V
DD
V
DS (ON)
t
t
f
r
t
t
on
off
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HN7G10FE
Q1 (Transistor)
I
– V
CE
h
– I
C
C
FE
1.0
0.8
10000
Common emitter
VCE = 2 V
Common emitter
5000
3000
Ta = 25°C
6
5
1000
Ta = 100°C
4
0.6
0.4
0.2
25
500
300
3
−25
2
100
1
50
30
IB = 0.5 mA
10
0.1
0
0
1
2
3
4
5
0.3
1
3
10
30
100
300 1000
Collector-emitter voltage
V
(V)
Collector current
I
C
(mA)
CE
V
– I
V
– I
BE (sat) C
CE (sat)
C
1000
50
30
Common emitter
Common emitter
IC/IB = 20
500
300
IC/IB = 20
Ta = 25°C
10
100
5
3
50
30
Ta = 100°C
−25
1
10
0.5
0.3
25
5
3
1
0.1
0.1
0.3
1
3
10
30
100
300 1000
0.1
0.3
1
3
10
30
100
300 500
Collector current
I
C
(mA)
Collector current
I
C
(mA)
I
– V
BE
C
ob
– V
C
CB
1000
100
IE = 0 A
Common emitter
500
300
f = 1 MHz
Ta = 25°C
VCE = 2 V
50
30
100
50
30
10
Ta = 100°C 25
−25
5
3
10
5
3
1
0.1
1
0.0
0.4
0.8
1.2
1.6
0.3
1
3
10
30
100
Base-emitter voltage
V
(V)
Collector-base voltage
V
(V)
BE
CB
3
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HN7G10FE
Q2 (S-MOS)
4
2007-11-01
HN7G10FE
Q2 (S-MOS)
5
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HN7G10FE
Q1, Q2 Common
P* – Ta
200
150
100
50
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta (°C)
*:Total rating
6
2007-11-01
HN7G10FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-11-01
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