2SK3868(Q,M) [TOSHIBA]
MOSFET N-CH 500V 5A SC-67;
| 型号： | 2SK3868(Q,M) |
| 厂家： | 
TOSHIBA |
| 描述： | MOSFET N-CH 500V 5A SC-67 |
| 文件： | 总6页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3868
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3868
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 1.3 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 3 S (typ.)
fs
Low leakage current: I
= 100 μA (V
= 500 V)
DSS
DS
Enhancement model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
th
DS
D
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
500
500
±30
5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (t = 1 ms)
1: Gate
2: Drain
3: Source
I
20
35
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
JEDEC
―
Single pulse avalanche energy
E
180
mJ
(Note 2)
JEITA
SC-67
2-10U1B
Avalanche current
I
5
3.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 1.7 g (typ.)
T
150
ch
Storage temperature range
T
-55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.57
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: = 90 V, T = 25°C (initial), L = 12.2 mH, I = 5 A, R = 25 Ω
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2009-09-29
2SK3868
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Gate-source breakdown voltage
Drain cutoff current
V
V
= 0 V
(BR) GSS
DS
= 500 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 0 V
500
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
1.7
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 2.5 A
1.3
3.0
550
7
Ω
S
DS (ON)
⎪Y ⎪
D
= 10 V, I = 2.5 A
1.5
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
70
⎯
oss
Rise time
t
r
⎯
⎯
⎯
⎯
10
20
10
50
⎯
⎯
⎯
⎯
10 V
GS
0 V
I
= 2.5 A V
OUT
D
V
R
L
=
Turn-on time
Switching time
t
on
15 Ω
90 Ω
ns
Fall time
t
f
∼
V
225 V
DD
Duty ≤ 1%, t = 10 μs
Turn-off time
t
w
off
16
10
6
Total gate charge
Gate-source charge
Gate-drain charge
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
∼
V
400 V, V
= 10 V, I = 5 A
nC
Q
DD
GS
D
gs
gd
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
20
A
A
Continuous drain reverse current (Note 1)
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 5 A, V
= 5 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
t
= 0 V,
150
0.3
ns
μC
rr
GS
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3868
Part No. (or abbreviation code)
Lot No.
Note 4
2
2009-09-29
2SK3868
I
– V
I
– V
D
DS
D
DS
5
4
3
2
10
COMMON SOURCE
Tc = 25°C
10
10
6
COMMON SOURCE
Tc = 25°C
5.5
PULSE TEST
PULSE TEST
8
6
4
5.25
6
5
5.5
5.25
5
4.75
4.5
1
0
2
0
4.75
4.5
= 4 V
V
= 4 V
GS
V
GS
0
2
4
6
8
10
0
4
8
12
16
20
24
12
DRAIN-SOURCE VOLTAGE
V
(V)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
10
8
20
COMMON SOURCE
Tc = 25℃
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
16
12
8
PULSE TEST
25
6
Tc = −55°C
I
= 5 A
D
4
100
2.5
1.2
4
2
0
0
0
0
2
4
6
8
10
4
8
12
16
20
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y ⎪ – I
fs
R
– I
DS (ON) D
D
10
10
COMMON SOURCE
= 10 V
COMMON SOURCE
Tc = 25°C
V
DS
PULSE TEST
PULSE TEST
100
Tc = −55°C
V
= 10 V､15V
GS
25
1
1
0.1
0.1
0.1
0.01
1
10
0.1
1
10
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
3
2009-09-29
2SK3868
R
– Tc
I
– V
DS
DS (ON)
DR
5
4
3
2
1
10
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
= 10 V
V
GS
5
3
PULSE TEST
PULSE TEST
1
I
= 5 A
D
0.5
0.3
10
2.5
3
1.2
V
= 0, −1,1 V
GS
0
−80
0.1
0
−0.4
−1.6
−2.0
−40
0
40
80
120
160
−0.8 −1.2
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
10000
5
4
COMMON SOURCE
= 10 V
V
DS
= 1 mA
I
D
1000
100
10
C
iss
PULSE TEST
3
2
1
C
C
oss
COMMON SOURCE
= 0 V
rss
V
GS
f = 1 MHz
Tc = 25°C
1
0.1
0
−80
1
10
100
−40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
P
– Tc
D
50
500
20
V
DS
40
30
20
400
300
16
12
8
V
= 100 V
400
DD
200
200
100
0
COMMON SOURCE
I = 5 A
D
V
GS
10
0
4
0
Tc = 25°C
PULSE TEST
25
0
40
80
120
160
200
0
5
10
20
15
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
4
2009-09-29
2SK3868
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.05
0.02
0.1
P
DM
t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
R
= 3.57°C/W
th (ch-c)
0.001
10μ
100μ
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH
t
(s)
w
SAFE OPERATING AREA
E
– T
ch
AS
100
10
200
I
max (PULSED) *
D
160
120
80
100 μs *
I
max (CONTINUOUS) *
D
1 ms *
DC OPERATION
1
Tc = 25°C
40
* SINGLE NONREPETITIVE
PULSE
0.1
0
25
Tc=25℃
50
75
100
125
150
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
CHANNEL TEMPERATURE (INITIAL)
(°C)
T
ch
V
max
DSS
0.01
100
1000
1
10
B
VDSS
DRAIN-SOURCE VOLTAGE
V
(V)
DS
15 V
I
AR
−15 V
V
V
DS
DD
TEST CIRCUIT
WAVEFORM
⎛
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω
VDSS
G
⎜
⎜
⎝
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 12.2 mH
B
VDSS
DD
5
2009-09-29
2SK3868
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2009-09-29
相关型号：
2SK387
TRANSISTOR 12 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
TOSHIBA
2SK3872-01SJ
Power Field-Effect Transistor, 40A I(D), 230V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FUJI
©2020 ICPDF网 联系我们和版权申明