2SK3662_06 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator, DC−DC Converter, Motor Drive; 硅N沟道MOS型开关稳压器， DC- DC转换器，电机驱动器
| 型号： | 2SK3662_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type Switching Regulator, DC−DC Converter, Motor Drive |
| 文件： | 总6页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive
Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 9.4 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 55 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 60 V)
DSS
DS
Enhancement mode : V = 1.3 to 2.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
60
60
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
±20
35
GSS
I
D
DC
(Note 1)
Drain current
A
I
105
35
Pulse (Note 1)
DP
Drain power dissipation (Tc = 25°C)
P
W
mJ
A
D
JEDEC
JEITA
―
Single pulse avalanche energy
E
I
204
35
AS
SC-67
2-10R1B
(Note 2)
Avalanche current
AR
TOSHIBA
Repetitive avalanche energy
Weight: 1.9 g (typ.)
E
3.5
mJ
AR
(Note 3)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.57
62.5
°C/ W
°C/ W
th (ch−c)
R
th (ch−a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 25 V, T = 25°C (initial), L = 227 μH, I = 35 A, R = 25 Ω
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-17
2SK3662
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
60
40
1.3
⎯
⎯
28
⎯
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
GSS
GS
DS
DS
Drain cut-off current
I
= 60 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= −20 V
⎯
⎯
V
V
V
V
V
= 10 V, I = 1 mA
⎯
2.5
19
th
DS
GS
GS
DS
D
= 4 V, ID = 18 A
12.5
9.4
55
Drain-source ON resistance
R
mΩ
S
DS (ON)
= 10 V, I = 18 A
12.5
⎯
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 18 A
D
C
C
5120
300
500
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
DS
rss
C
⎯
oss
I
= 18 A
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
6
19
⎯
⎯
⎯
⎯
⎯
D
10 V
GS
0 V
V
OUT
V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
20
V
≈ 30 V
DD
Duty ≤ 1%, t = 10 μs
Turn-off time
t
115
91
w
off
Total gate charge
Q
g
(gate-source plus gate-drain)
V
I
≈ 48 V, V
DD
= 35 A
= 10 V,
GS
nC
Gate-source charge
Q
gs
⎯
⎯
70
21
⎯
⎯
D
Gate-drain (“miller”) charge
Q
gd
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
⎯
Typ.
⎯
Max
35
Unit
A
Continuous drain reverse current
I
⎯
⎯
DR
(Note 1)
(Note 1)
Pulse drain reverse current
I
⎯
⎯
105
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 35 A, V
= 0 V
⎯
⎯
⎯
⎯
60
58
−1.5
⎯
V
DS2F
DR1 GS
= 35 A, V = 0 V,
GS
t
ns
nC
rr
DR
dI /dt = 50 A/μs
DR
Q
rr
⎯
Marking
K3662
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
2SK3662
I
– V
I
– V
DS
D
6
DS
4
D
4
40
30
20
10
0
100
80
60
40
20
0
6
Common source
10
3.5
4.2
Tc = 25°C
Pulse test
8
10
3.8
3.3
3.6
3.4
V
= 3 V
GS
Common source
Tc = 25°C
V
= 3 V
GS
Pulse test
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0
Common source
= 10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
I
= 35 A
D
17
9
100
25
Tc = −55°C
0
1
2
3
4
5
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
fs
D
R
– I
DS (ON)
D
300
100
50
30
Common source
Common source
Tc = 25°C
Pulse test
V
= 10 V
DS
Pulse test
Tc = −55°C
4
10
50
30
25
100
V
= 10 V
GS
5
3
10
5
1
1
1
3
5
10
30
50
100
3
5
10
30
50
100
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2006-11-17
2SK3662
R
– Tc
I
– V
DR DS
DS (ON)
25
20
15
10
5
100
10
1
Common source
Pulse test
17 A, 9 A
10
5
I
= 35 A
D
3
V
= 4 V
GS
V
= 10 V
GS
= 35 A, 17 A, 9 A
I
D
Common source
Tc = 25°C
V
= 0 V
GS
Pulse test
0
−80
−40
0
40
80
120
160
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
10000
1000
100
5
4
3
2
1
0
Common source
= 10 V
V
DS
= 1 mA
C
iss
I
D
Pulse test
C
oss
C
rss
Common source
= 0 V
V
GS
f = 1 MHz
Ta = 25°C
−80
−40
0
40
80
120
160
10
0.1
Case temperature Tc (°C)
1
10
100
Drain-source voltage
V
DS
(V)
P
– Tc
Dynamic input/output characteristics
D
40
30
20
10
0
80
16
Common source
= 10 A
Common source
V
I
= 35 A
D
DS
= 1 mA
I
Tc = 25°C
Pulse test
D
Pulse test
60
40
20
0
12
8
V
DS
12
24
V
= 48 V
DD
4
V
GS
0
160
0
40
80
120
160
0
40
80
120
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2006-11-17
2SK3662
r
th
– t
w
3
1
Duty = 0.5
0.3
0.1
0.2
0.1
0.05
0.02
P
DM
0.03
0.01
0.00
t
0.01
Single pulse
T
Duty = t/T
R
= 3.57°C/W
th (ch-c)
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(S)
w
Safe operating area
E
– T
ch
AS
300
100
250
I
max (pulsed)*
D
200
150
100
50
t = 1 ms*
I
max (continuous)
D
30
10
t = 10 ms*
3
1
0
25
* Single nonrepetitive pulse
Tc = 25°C
50
75
100
125
150
0.3
0.1
Channel temperature (initial)
T
(°C)
ch
Curves must be derated linearly
with increase in temperature.
V
max
DSS
0.1
1
10
100
B
VDSS
Drain-source voltage
V
DS
(V)
15 V
I
AR
−15 V
V
V
DD
DS
Test circuit
Waveform
⎛
⎜
⎞
⎟
1
B
2
VDSS
R
V
= 25 Ω
G
=
⋅L ⋅I ⋅
Ε
AS
⎜
⎝
⎟
⎠
2
−
B
V
= 25 V, L = 227 μH
VDSS
DD
DD
5
2006-11-17
2SK3662
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-17
相关型号：
2SK3663-A
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-70, 3 PIN
NEC
©2020 ICPDF网 联系我们和版权申明