2SK3664 [NEC]

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING; N沟道MOS场效应晶体管开关
2SK3664
型号: 2SK3664
厂家: NEC    NEC
描述:

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N沟道MOS场效应晶体管开关

晶体 开关 晶体管 场效应晶体管 光电二极管
文件: 总6页 (文件大小:140K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3664  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK3664 is a switching device, which can be driven directly  
by a 2.5 V power source.  
+0.1  
–0  
+0.1  
0.3  
0.15  
–0.05  
The device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such as  
power switch of portable machine and so on.  
3
0 to 0.1  
FEATURES  
2.5 V drive available  
2
1
Low on-state resistance  
+0.1  
–0  
0.2  
0.5  
RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.3 A)  
RDS(on)2 = 0.60 MAX. (VGS = 4.0 V, ID = 0.3 A)  
RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A)  
0.6  
0.5  
0.75 0.05  
1.0  
1.6 0.1  
ORDERING INFORMATION  
1: Source  
2: Gate  
3: Drain  
PART NUMBER  
PACKAGE  
2SK3664  
SC-75 (USM)  
Marking: G1  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 0 V)  
VDSS  
VGSS  
ID(DC)  
20  
±12  
±0.5  
±2.0  
0.2  
V
V
A
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
Drain  
Drain Current (pulse) Note1  
Total Power Dissipation Note2  
Channel Temperature  
ID(pulse)  
PT  
A
Body  
Diode  
Gate  
W
°C  
°C  
Tch  
Tstg  
150  
55 to +150  
Gate  
Storage Temperature  
Protection  
Diode  
Source  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on ceramic substrate of 300 mm2 x 0.64 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with  
caution for electrostatic discharge.  
VESD = ±200 V TYP. (C = 200 pF, R = 0 , Single pulse)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16599EJ2V0DS00 (2nd edition)  
Date Published November 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2003  
2SK3664  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN. TYP. MAX. UNIT  
IDSS  
VDS = 20 V, VGS = 0 V  
1.0  
10  
µA  
µA  
V
IGSS  
VGS = 12 V, VDS = 0 V  
VDS = 10 V, ID = 1.0 mA  
VDS = 10 V, ID = 0.3 A  
VGS = 4.5 V, ID = 0.3 A  
VGS = 4.0 V, ID = 0.3 A  
VGS = 2.5 V, ID = 0.15 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
0.5  
1.0  
0.75  
0.38  
0.41  
0.60  
28  
1.5  
Forward Transfer Admittance Note  
Drain to Source On-state Resistance Note  
0.25  
S
0.57  
0.60  
0.88  
Input Capacitance  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
VGS = 0 V  
11  
Crss  
f = 1 MHz  
7.0  
20  
td(on)  
VDD = 10 V, ID = 0.30 A  
VGS = 4.0 V  
tr  
51  
Turn-off Delay Time  
Fall Time  
Body Diode Forward Voltage Note  
td(off)  
RG = 10 Ω  
94  
tf  
87  
VF(S-D)  
IF = 0.5 A, VGS = 0 V  
0.87  
Note Pulsed  
TEST CIRCUIT SWITCHING TIME  
D.U.T.  
V
V
GS  
R
L
90%  
V
GS  
Wave Form  
VGS  
10%  
R
G
0
PG.  
V
DD  
DS  
90%  
90%  
V
0
GS  
V
DS  
10% 10%  
V
DS  
Wave Form  
0
τ
td(on)  
tr  
td(off)  
tf  
τ = 1µs  
Duty Cycle 1%  
t
on  
toff  
2
Data Sheet D16599EJ2V0DS  
2SK3664  
TYPICAL CHARACTERISTICS (TA = 25°C)  
TOTAL POWER DISSIPATION vs.  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
AMBIENT TEMPERATURE  
240  
2
1.6  
1.2  
0.8  
0.4  
0
Mounted on ceramic substrate  
of 3.0 cm2 x 0.64 mm  
Pulsed  
VGS = 4.5 V  
200  
160  
120  
80  
4.0 V  
2.5 V  
40  
0
30  
60  
90  
120 150 180 210  
0
0.4  
0.8  
1.2  
1.6  
TA - Ambient Temperature - °C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
10  
1
1.4  
1.2  
1
VDS = 10 V  
Pulsed  
VDS = 10 V  
ID = 1.0 mA  
0.1  
0.01  
A
T
= 125°C  
75°C  
25°C  
0.8  
0.6  
0.4  
25°C  
0.001  
0.0001  
0
0.5  
1
1.5  
2
2.5  
3
-50  
0
50  
100  
150  
VGS - Gate to Source Voltage - V  
Tch - Channel Temperature - °C  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
10  
1
1.2  
VGS = 4.5 V  
DS  
V
= 10 V  
Pulsed  
Pulsed  
1
A
T
= 25°C  
25°C  
0.8  
75°C  
125°C  
TA = 125°C  
75°C  
0.6  
0.4  
0.2  
0
0.1  
25°C  
25°C  
0.01  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
ID - Drain Current - A  
ID - Drain Current - A  
3
Data Sheet D16599EJ2V0DS  
2SK3664  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
1.2  
1.2  
VGS = 2.5 V  
VGS = 4.0 V  
Pulsed  
Pulsed  
1
1
TA = 125°C  
75°C  
0.8  
TA = 125°C  
75°C  
0.8  
0.6  
0.4  
0.2  
0
0.6  
25°C  
25°C  
0.4  
0.2  
0
25°C  
25°C  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
ID - Drain Current - A  
ID - Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
1.2  
1.2  
Pulsed  
Pulsed  
1
0.8  
0.6  
0.4  
0.2  
0
1
0.8  
0.6  
VGS = 2.5 V, ID = 0.15 A  
ID = 0.3 A  
0.4  
VGS = 4.0 V, ID = 0.3 A  
VGS = 4.5 V, ID = 0.3 A  
0.2  
0
0
2
4
6
8
10  
12  
-50  
0
50  
100  
150  
VGS - Gate to Source Voltage - V  
Tch - Channel Temperature - °C  
CAPACITANCE vs.  
SWITCHING CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
100  
10  
1
1000  
100  
10  
GS  
V
= 0 V  
VDD = 10 V  
VGS = 4.0 V  
RG = 10 Ω  
f = 1.0 MHz  
iss  
C
td(off)  
tf  
oss  
C
rss  
C
tr  
td(on)  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
4
Data Sheet D16599EJ2V0DS  
2SK3664  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
10  
Pulsed  
1
VGS = 0 V  
0.1  
0.01  
0.001  
0.4  
0.6  
0.8  
1
1.2  
1.4  
VF(S-D) - Source to Drain Voltage - V  
5
Data Sheet D16599EJ2V0DS  
2SK3664  
The information in this document is current as of November, 2004. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  

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