2SK3664 [NEC]
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING; N沟道MOS场效应晶体管开关型号: | 2SK3664 |
厂家: | NEC |
描述: | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
文件: | 总6页 (文件大小:140K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3664
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3664 is a switching device, which can be driven directly
by a 2.5 V power source.
+0.1
–0
+0.1
0.3
0.15
–0.05
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
3
0 to 0.1
FEATURES
• 2.5 V drive available
2
1
• Low on-state resistance
+0.1
–0
0.2
0.5
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
0.6
0.5
0.75 0.05
1.0
1.6 0.1
ORDERING INFORMATION
1: Source
2: Gate
3: Drain
PART NUMBER
PACKAGE
2SK3664
SC-75 (USM)
Marking: G1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V)
VDSS
VGSS
ID(DC)
20
±12
±0.5
±2.0
0.2
V
V
A
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
ID(pulse)
PT
A
Body
Diode
Gate
W
°C
°C
Tch
Tstg
150
−55 to +150
Gate
Storage Temperature
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 300 mm2 x 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16599EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
2SK3664
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 20 V, VGS = 0 V
1.0
10
µA
µA
V
IGSS
VGS = 12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.3 A
VGS = 4.0 V, ID = 0.3 A
VGS = 2.5 V, ID = 0.15 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
0.5
1.0
0.75
0.38
0.41
0.60
28
1.5
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
0.25
S
0.57
0.60
0.88
Ω
Ω
Ω
Input Capacitance
pF
pF
pF
ns
ns
ns
ns
V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
11
Crss
f = 1 MHz
7.0
20
td(on)
VDD = 10 V, ID = 0.30 A
VGS = 4.0 V
tr
51
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage Note
td(off)
RG = 10 Ω
94
tf
87
VF(S-D)
IF = 0.5 A, VGS = 0 V
0.87
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
V
GS
R
L
90%
V
GS
Wave Form
VGS
10%
R
G
0
PG.
V
DD
DS
90%
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
td(on)
tr
td(off)
tf
τ = 1µs
Duty Cycle ≤ 1%
t
on
toff
2
Data Sheet D16599EJ2V0DS
2SK3664
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
AMBIENT TEMPERATURE
240
2
1.6
1.2
0.8
0.4
0
Mounted on ceramic substrate
of 3.0 cm2 x 0.64 mm
Pulsed
VGS = 4.5 V
200
160
120
80
4.0 V
2.5 V
40
0
30
60
90
120 150 180 210
0
0.4
0.8
1.2
1.6
TA - Ambient Temperature - °C
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
10
1
1.4
1.2
1
VDS = 10 V
Pulsed
VDS = 10 V
ID = 1.0 mA
0.1
0.01
A
T
= 125°C
75°C
25°C
0.8
0.6
0.4
−25°C
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
1
1.2
VGS = 4.5 V
DS
V
= 10 V
Pulsed
Pulsed
1
A
T
= −25°C
25°C
0.8
75°C
125°C
TA = 125°C
75°C
0.6
0.4
0.2
0
0.1
25°C
−25°C
0.01
0.001
0.01
0.1
1
10
0.01
0.1
1
10
ID - Drain Current - A
ID - Drain Current - A
3
Data Sheet D16599EJ2V0DS
2SK3664
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1.2
VGS = 2.5 V
VGS = 4.0 V
Pulsed
Pulsed
1
1
TA = 125°C
75°C
0.8
TA = 125°C
75°C
0.8
0.6
0.4
0.2
0
0.6
25°C
−25°C
0.4
0.2
0
25°C
−25°C
0.01
0.1
1
10
0.01
0.1
1
10
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.2
1.2
Pulsed
Pulsed
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
VGS = 2.5 V, ID = 0.15 A
ID = 0.3 A
0.4
VGS = 4.0 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.3 A
0.2
0
0
2
4
6
8
10
12
-50
0
50
100
150
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
CAPACITANCE vs.
SWITCHING CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
100
10
1
1000
100
10
GS
V
= 0 V
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
f = 1.0 MHz
iss
C
td(off)
tf
oss
C
rss
C
tr
td(on)
0.1
1
10
100
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D16599EJ2V0DS
2SK3664
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Pulsed
1
VGS = 0 V
0.1
0.01
0.001
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D16599EJ2V0DS
2SK3664
•
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
相关型号:
©2020 ICPDF网 联系我们和版权申明