2SK3663-A [NEC]
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-70, 3 PIN;
| 型号： | 2SK3663-A |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-70, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3663
SC-70 (SSP)
Remark Marking : G26
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
EQUIVALENT CIRCUIT
VDSS
VGSS
ID (DC)
20
±12
V
V
Drain
±0.5
A
Drain Current (pulse) Note1
Body
Diode
ID (pulse)
PT
±2.0
A
Gate
Total Power Dissipation Note2
Channel Temperature
Storage Temperature
0.2
W
°C
°C
Tch
150
Gate
Protection
Diode
Tstg
−55 to +150
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2003
Document No.
D16529EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2SK3663
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 20 V, VGS = 0 V
MIN. TYP. MAX. UNIT
1.0
±10
1.5
µA
µA
V
IGSS
VGS = ±12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.30 A
VGS = 4.5 V, ID = 0.30 A
VGS = 4.0 V, ID = 0.30 A
VGS = 2.5 V, ID = 0.15 A
VDS = 10 V
Gate Cut-off VoltageNote
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
0.5
1.0
0.75
0.38
0.41
0.60
28
Forward Transfer AdmittanceNote
Drain to Source On-state ResistanceNote
0.25
S
0.57
0.60
0.88
Ω
Ω
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
V
Coss
VGS = 0 V
11
Crss
f = 1.0 MHz
7
td(on)
VDD = 10 V, ID = 0.30 A
VGS = 4.0 V
20
tr
51
Turn-off Delay Time
Fall Time
td off)
RG = 10 Ω
94
tf
87
Body Diode Forward Voltage
VF(S-D)
IF = 0.5 A, VGS = 0 V
0.87
Note Pulsed : PW≤350 µs, Duty Cycle≤2%
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
V
DS
90%
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1µs
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet D16529EJ1V0DS
2SK3663
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
0.24
0.2
0.16
0.12
0.08
0.04
0
Mounted on FR-4 board of
2500 mm2 x 1.1 mm
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
2
1.6
1.2
0.8
0.4
0
10
Pulsed
VDS = 10 V
Pulsed
VGS = 4.5 V
1
4.0 V
0.1
TA = 125°C
75°C
2.5 V
25°C
−25°C
0.01
0.001
0.0001
0
0.4
0.8
1.2
1.6
0
0.5
1
1.5
2
2.5
3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.4
1.2
1
10
VDS = 10 V
Pulsed
VDS = 10 V
ID = 1.0 mA
−
°
TA = 25 C
°
25 C
1
°
75 C
125°C
0.8
0.6
0.4
0.1
0.01
-50
0
50
100
150
0.001
0.01
0.1
1
10
ID - Drain Current - A
Tch - Channel Temperature - °C
3
Data Sheet D16529EJ1V0DS
2SK3663
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
1.2
ID = 0.30 A
Pulsed
Pulsed
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
VGS = 2.5 V, ID = 0.15 A
VGS = 4.0 V, ID = 0.30 A
VGS = 4.5 V, ID = 0.30 A
-50
0
50
100
150
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1.2
VGS = 4.5 V
Pulsed
VGS = 4.0 V
Pulsed
1
1
0.8
0.6
0.4
0.2
0
TA = 125°C
TA = 125°C
75°C
0.8
0.6
0.4
0.2
0
75°C
25°C
25°C
−
25°C
−25°C
0.01
0.1
1
10
0.01
0.1
1
10
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1.2
100
10
1
VGS = 2.5 V
Pulsed
GS
V
= 0 V
f = 1.0 MHz
1
0.8
0.6
0.4
0.2
0
TA = 125°C
75°
iss
C
C
oss
rss
C
25°C
−
25°C
0.1
1
10
100
0.01
0.1
1
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D16529EJ1V0DS
2SK3663
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
10
VDD = 10 V
VGS = 4.0 V
VGS = 0 V
Pulsed
Ω
RG = 10
1
td(off)
0.1
tf
0.01
tr
td(on)
0.001
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
1.4
ID - Drain Current - A
VF (S-D) - Source to Drain Voltage - V
5
Data Sheet D16529EJ1V0DS
2SK3663
•
The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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M8E 02. 11-1
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