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2SK3633(Q) [TOSHIBA]

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2SK3633(Q)
型号: 2SK3633(Q)
厂家: TOSHIBA    TOSHIBA
描述:

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稳压器 开关
文件: 总6页 (文件大小:239K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2SK3633_09

Switching Regulator Applications

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TOSHIBA

2SK3634

SWITCHING N-CHANNEL POWER MOSFET

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NEC

2SK3634

MOS Field Effect Transistor

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KEXIN

2SK3634

High voltage: VDSS = 200 V Gate voltage rating: 30 V Built-in gate protection diode

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TYSEMI

2SK3634

6000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, 3 PIN

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RENESAS

2SK3634-AZ

Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN

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NEC

2SK3634-Z

SWITCHING N-CHANNEL POWER MOSFET

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NEC

2SK3634-Z

6000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252, TO-252, 3 PIN

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RENESAS

2SK3635

SWITCHING N-CHANNEL POWER MOSFET

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NEC

2SK3635

MOS Field Effect Transistor

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KEXIN

2SK3635

High voltage: VDSS = 200 V Gate voltage rating: -30 V Built-in gate protection diode

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TYSEMI

2SK3635-AZ

暂无描述

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NEC

2SK3635-Z

SWITCHING N-CHANNEL POWER MOSFET

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NEC

2SK3636

Silicon N-channel Power MOSFET

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KEXIN

2SK3636

Avalanche energy capacity guaranteed: EAS 20 mJ High-speed switching: tf = 50 ns

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TYSEMI

2SK3637

Silicon N-channel power MOSFET

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PANASONIC

2SK3637

Silicon N-channel Power MOSFET

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KEXIN

2SK3637

Low on-resistance, low Qg High avalanche resistance

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TYSEMI

2SK3638

SWITCHING N-CHANNEL POWER MOSFET

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NEC

2SK3638

MOS Field Effect Transistor

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KEXIN