2SK3634 [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3634 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
PART NUMBER
PACKAGE
2SK3634
TO-251 (MP-3)
TO-252 (MP-3Z)
2SK3634-Z
FEATURES
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package
(TO-251)
(TO-252)
• Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
200
±30
V
V
±6.0
±18
A
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
20
W
W
°C
°C
A
PT2
1.0
Tch
150
Storage Temperature
Tstg
–55 to +150
6.0
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Pulse Avalanche Energy Note3
IAS
EAS
3.6
mJ
A
IAR
6.0
EAR
2.0
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH
3. Tch ≤ 125°C , RG = 25 Ω, VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15936EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
2SK3634
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
IDSS
VDS = 200 V, VGS = 0 V
10
±10
4.5
µA
µA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 3.0 A
VGS = 10 V, ID = 3.0 A
VDS = 10 V
2.5
2
3.5
4
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
0.47
270
75
33
4
0.60
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
VDD = 100 V, ID = 3.0 A
VGS = 10 V
Rise Time
8
Turn-off Delay Time
td(off)
tf
RG = 0 Ω
14
6
Fall Time
Total Gate Charge
QG
VDD = 160 V
9
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
1.5
4.5
1.0
100
320
ID = 6.0 A
IF = 16 A, VGS = 0 V
IF = 6 A, VGS = 0 V
di/dt = 100 A/µs
ns
nC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS
R
L
90%
90%
PG.
GS = 20 → 0 V
V
GS
V
GS
10%
V
DD
50 Ω
Wave Form
0
RG
V
PG.
VDD
90%
ID
BVDSS
ID
IAS
V
0
GS
10%
10%
ID
0
VDS
Wave Form
ID
td(on)
tr
td(off)
t
f
VDD
τ
ton
toff
τ = 1 s
µ
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG
= 2 mA
RL
PG.
VDD
50 Ω
2
Data Sheet D15936EJ2V0DS
2SK3634
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
20
15
10
5
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
ID(DC) = 6 A
PW = 100 µs
1 ms
10 ms
RDS(on) Limited
(VGS = 10 V)
1
0.1
0.01
Power Dissipation
Limited
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
°
Rth( j-A) = 125 C/W
Rth( j-C) = 6.25°C/W
100
1
0.1
100 µ
1 m
10 m
100 m
1
10
1000
PW - Pulse Width - s
3
Data Sheet D15936EJ2V0DS
2SK3634
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
30
25
20
15
10
5
100
Pulsed
Pulsed
DS
V
= 10 V
GS
V
= 10 V
10
1
Tch = 125°C
75°C
0.1
25°C
−25°C
0.01
0.001
0.0001
0
0
5
10
15
20
25
30
0
5
10
15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
5
Pulsed
VDS = 10 V
VSD = 10 V
ID = 1 mA
TA = −25°C
4.5
4
25°C
75°C
125°C
1
3.5
3
0.1
0.01
2.5
2
0.01
0.1
1
10
100
-50
-25
0
25
50
75
100 125 150
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RESISTANCE vs. DRAIN CURRENT
2
1.5
1
1
Pulsed
Pulsed
VGS = 10 V
0.9
0.8
ID = 6.0 A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3.0 A
1.5 A
0.5
0
0.01
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15936EJ2V0DS
2SK3634
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1.6
1000
100
10
Pulsed
VGS = 0 V
f = 1 MHz
GS
V
= 10 V
1.4
1.2
1
Ciss
Coss
D
I
= 6 A
3 A
0.8
0.6
0.4
0.2
0
Crss
1
-50
-25
0
25
50
75
100 125 150
0.1
1
10
100
1000
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
1
240
220
200
180
160
140
120
100
80
12
D
I
= 6.0 A
VDD = 100 V
VGS = 10 V
RG = 0 Ω
10
8
DD
V
= 160 V
100 V
40 V
td(off)
GS
V
6
tr
tf
4
60
td(on)
40
2
DS
V
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1000
100
10
GS
V
= 0 V
Pulsed
di/dt = 100 A/µs
GS
V
= 0 V
1
0.1
0.01
1
0.1
1
10
100
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
IF – Diode Forward Current - A
5
Data Sheet D15936EJ2V0DS
2SK3634
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
100
80
60
40
20
0
VDD = 100 V
DD
V
R
V
= 100 V
RG = 25 Ω
G
Ω
= 25
VGS = 20 → 0 V
Starting Tch = 25°C
GS
→
0 V
= 20
AS ≤
I
6.0 A
IAS = 6.0 A
EAS = 3.6 mJ
0.1
0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D15936EJ2V0DS
2SK3634
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
2.3 0.2
0.5 0.1
6.5 0.2
5.0 0.2
4
6.5 0.2
2.3 0.2
0.5 0.1
5.0 0.2
4
1
2
3
1
2
3
1.1 0.2
0.9
0.8
1.1 0.2
MAX. MAX.
2.3 2.3
0.5 +−00..12
0.5 +−00..21
0.8
1. Gate
2.3 2.3
2. Drain
3. Source
4. Fin (Drain)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D15936EJ2V0DS
2SK3634
•
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
相关型号：
2SK3634-AZ
Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN
NEC
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