2SK3634 [RENESAS]
6000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, 3 PIN;
| 型号： | 2SK3634 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 6000mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251, TO-251, 3 PIN 开关 晶体管 |
| 文件： | 总10页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
PART NUMBER
2SK3634
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
2SK3634-Z
FEATURES
• High voltage: VDSS = 200 V
• Gate voltage rating: ±30 V
RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package
(TO-251)
• Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (TA = 25
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
GSS
ID(DC)
ID(pulse)
PT1
200
±30
V
V
±6.0
±18
A
A
(TO-252)
Total Power Dissipation (TC )
Total Power Dissipation 5°C)
Channel Temperature
20
W
W
°C
°C
A
PT2
1.0
Tch
150
Storage Temperature
Tstg
–55 to +150
6.0
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Pulse Avalanche Energy Note3
IAS
EAS
3.6
mJ
A
IAR
6.0
EAR
2.0
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch ≤ 125°C , RG = 25 Ω, VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15936EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2001
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK3634
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
IDSS
TEST CONDITIONS
VDS = 200 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
4.5
μA
μA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 3.0 A
VGS = 10 V, ID = 3.0 A
VDS = 10 V
2.5
2
3.5
4
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
0.47
270
75
33
4
0.60
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
VDD = 100 V, ID = 3.0 A
VGS = 10 V
Rise Time
8
Turn-off Delay Time
td(off)
tf
RG = 0 Ω
14
6
Fall Time
Total Gate Charge
QG
VDD = 160 V
9
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
1.5
4.5
1.0
100
320
ID = 6.0 A
IF = 16 A, VGS = 0
IF = 6 A, VG
di/dt =
ns
nC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
T CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
50 Ω
V
GS
R
L
90%
90%
PG.
GS = 20 → 0 V
V
GS
V
GS
10%
Wave Form
0
RG
V
PG.
V
DD
90%
I
D
BV
I
D
I
AS
V
0
GS
10%
10%
I
D
0
DS
Wave Form
I
D
t
d(on)
t
r
t
d(off)
t
f
V
DD
τ
t
on
t
off
τ = 1 s
μ
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet D15936EJ3V0DS
2SK3634
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
20
15
10
5
100
80
60
40
20
0
0
0
25
5
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
Case Temperature - °C
100
10
ID(DC) = 6 A
PW = 100 μs
1 ms
10 ms
RDS(on) Limited
(VGS = 10 V)
1
0.1
0.01
Power Dissipation
Limited
0.1
1
10
00
1000
VDS - Drain to Sltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
°
Rth( j-A) = 125 C/W
Rth( j-C) = 6.25°C/W
100
1
0.1
100 μ
1 m
10 m
100 m
1
10
1000
PW - Pulse Width - s
3
Data Sheet D15936EJ3V0DS
2SK3634
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
30
25
20
15
10
5
100
Pulsed
Pulsed
DS
V
= 10 V
GS
V
= 10 V
10
1
Tch = 125°C
75°C
0.1
25°C
−25°C
0.01
0.001
0.0001
0
0
5
10
15
20
25
30
0
10
15
VDS - Drain to Source Voltage - V
VGS - Gurce Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWANSFER ADMITTANCE vs.
DRARENT
100
5
Pulsed
VDS = 10 V
VSD = 10 V
ID = 1 mA
A = −25°C
4.5
4
25°C
75°C
125°C
1
3.5
3
0.1
0.01
2.5
2
0.01
0.1
1
10
100
-50
-25
0
25
50
75
5 150
Tch - Channel Temp°C
ID - Drain Current - A
DRAIN TO SOURCATE
RESISTANCE vsCURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
2
1.5
1
1
Pulsed
VGS = 10 V
Pulsed
0.9
0.8
ID = 6.0 A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3.0 A
1.5 A
0.5
0
0.01
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15936EJ3V0DS
2SK3634
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1.6
1000
100
10
Pulsed
VGS = 0 V
f = 1 MHz
GS
V
= 10 V
1.4
1.2
1
Ciss
Coss
D
I
= 6 A
3 A
0.8
0.6
0.4
0.2
0
Crss
1
-50
-25
0
25
50
75
100 125 150
0.1
1
10
100
1000
Tch - Channel Temperature - °C
VDS o Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAUT/OUTPUT CHARACTERISTICS
100
10
1
240
22
60
140
120
100
80
12
D
I
= 6.0 A
VDD = 100 V
VGS = 10 V
RG = 0 Ω
10
8
DD
V
= 160 V
100 V
40 V
td(off)
GS
V
6
tr
tf
4
60
td(on)
40
2
DS
V
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0.1
1
100
ID - Drain Curr
QG - Gate Charge - nC
SOURCE TO DIODE
FORWARGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1000
100
10
GS
V
= 0 V
Pulsed
di/dt = 100 A/μs
GS
V
= 0 V
1
0.1
0.01
1
0.1
1
10
100
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
IF – Diode Forward Current - A
5
Data Sheet D15936EJ3V0DS
2SK3634
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
100
80
60
40
20
0
VDD = 100 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
DD
V
R
V
= 100 V
G
Ω
= 25
GS
→
0 V
= 20
I
AS ≤
6.0 A
IAS = 6.0 A
EAS = 3.6 mJ
0.1
0.01
0.1
1
10
25
50
100
125
150
L - Inductive Load - mH
Starting Tch Channel Temperature - °C
6
Data Sheet D15936EJ3V0DS
2SK3634
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
<R> 2) TO-252 (MP-3Z)
2.3 ±0.2
0.5 ±0.1
6.5 ±0.2
5.0 ±0.2
4
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
2.3 ±0.2
0.5 ±0.1
Note
Note
4
1
2
3
1
2 3
1.1 ±0.2
0.5 ±0.1
2.0.3
0.5 ±0.1
2.3 ±0.3
0.15 ±0.15
0.5 +−00..12
0.5 +−00..21
2.3 2.3
1. Gate
2. Drain
1. Gate
3. Source
4. Fin (Drain)
2. Drain
3. Source
4. Fin (Drain)
Nodepth of notch at the top of the fin is from
0 to 0.2 mm.
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D15936EJ3V0DS
2SK3634
•
The information in this document is current as of August, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NElectronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by ans without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsr any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patpyrights or other intellectual
property rights of third parties by or arising from the use of NEC Elecroducts listed in this document
or any other liability arising from the use of such products. No , express, implied or otherwise, is
granted under any patents, copyrights or other intellectual propertof NEC Electronics or others.
Descriptions of circuits, software and other related informatis document are provided for illustrative
purposes in semiconductor product operation and apexamples. The incorporation of these
circuits, software and information in the design of a er's equipment shall be done under the full
responsibility of the customer. NEC Electronics ano responsibility for any losses incurred by
customers or third parties arising from the use of tcuits, software and information.
•
• While NEC Electronics endeavors to enhance ity, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the pty of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property o(including death) to persons arising from defects in NEC
Electronics products, customers musporate sufficient safety measures in their design, such as
redundancy, fire-containment and ae features.
• NEC Electronics products are cinto the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grades only to NEC Electronics products developed based on a customer-
designated "quality assuogram" for a specific application. The recommended applications of an NEC
Electronics product deits quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronuct before using it in a particular application.
"Standard": Com, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
相关型号：
2SK3634-AZ
Small Signal Field-Effect Transistor, 6A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN
NEC
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