2SK3582MFV-B [TOSHIBA]
暂无描述;
| 型号： | 2SK3582MFV-B |
| 厂家： | 
TOSHIBA |
| 描述： | 暂无描述 晶体 小信号场效应晶体管 光电二极管 |
| 文件： | 总5页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3582TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3582TK
For ECM
Unit: mm
•
Application for Ultra-compact ECM
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta=25°C)
1
2
3
Characteristic
Gate-Drain voltage
Symbol
Rating
Unit
V
-20
10
V
GDO
Gate Current
I
mA
mW
°C
G
Drain power dissipation (Ta = 25°C)
Junction Temperature
P
100
D
T
125
j
Storage temperature range
T
−55~125
°C
stg
1.Drain
2.Source
3.Gate
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
TESM3
JEDEC
-
-
JEITA
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
TOSHIBA
2-1R1A
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Weight: 2.2mg (typ.)
IDSS CLASSIFICATION
A-Rank
B-Rank
80 to 200 µA
170 to 300µA
Marking
Equivalent Circuit
D
Type Name
IDSS Classification Symbol
A :A-Rank
B :B-Rank
5
G
S
1
2007-11-01
2SK3582TK
Electrical Characteristics (Ta=25°C)
Characteristic
Drain Current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
V
V
= 2 V, V
= 0
80
⎯
⎯
⎯
300
340
-0.65
⎯
µA
µA
V
DSS
DS
DD
DS
DS
GS
= 2 V, RL= 2kΩ,Cg = 10pF
= 2 V, I = 1μA
Drain Current
I
D
Gate-Source Cut-off Voltage
Forward transfer admittance
Gate-Drain Voltage
Input capacitance
V
-0.1
0.55
-20
⎯
⎯
GS(OFF)
D
|Y |
fs
= 2 V,V
= 0V
1.0
⎯
mS
V
GS
V
IG=-10μA
⎯
(BR)GDO
C
V
V
V
V
V
V
V
= 2 V, V = 0, f = 1 MHz
GS
3.6
0
⎯
pF
dB
dB
dB
mV
%
iss
DS
DD
DD
DD
DD
DD
DD
Voltage Gain
Gv
= 2V, RL= 2kΩ,Cg = 10pF, f = 1kHz,vin=100mV
= 2V, RL= 2kΩ,Cg = 10pF,f = 1kHz to 100Hz,vin=100mV
= 2V to 1.5V, RL= 2kΩ,Cg = 10pF,f = 1kHz, vin=100mV
= 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter
= 2V, RL= 2kΩ,Cg = 10pF, f = 1kHz, vin=50mV
= 2V, RL= 2kΩ,Cg = 10pF
-5.0
⎯
+2.0
-1.0
-3.0
50
Delta Voltage Gain
Delta Voltage Gain
Noise Voltage
DGv(f)
0
DGv(V)
VN
⎯
-1.0
⎯
⎯
Total Harmonic Distortion
Time Output Stability
THD
tos
⎯
1.0
100
⎯
⎯
200
ms
Time Output Stability Test Method
a) TEST CIRCUIT
b) TEST SIGNAL
V
DD
2V
V
DD=2.0V
50%
Vout
0V
Vout
V
DD-ID*RL
90%
0V
t
os
2
2007-11-01
2SK3582TK
I
D
– V
|Yfs| – I
DSS
GS
600
500
3
|Yfs|:VDS=2V
VGS=0V
VDS=2V
Common Source
Ta = 25 °C
IDSS: VDS=2V
VGS=0V
Common Source
400
300
Ta = 25 °C
2
1
IDSS=290μA
200
100
0
110μA
0
100
200
300
600
400
500
-1.0
-0.8
-0.6
-0.4
-0.2
0
Gate - Source voltage
V
(V)
Drain Current
I
(µA)
GS
DSS
Gv– I
DSS
V
– I
DSS
GS(OFF)
0
-500
-400
–1
–2
–3
-300
-200
Gv:VDD=2V
Cg=5pF
RL= 2.2kΩ,
VGS(OFF):VDS=2V
ID = 1μA
f=1kHz
vin=100mV
IDSS:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
Common Source
–4
–5
-100
0
Common Source
Ta = 25°C
Ta = 25 °C
0
100
200
300
400
500
600
0
100
200
300
400
500
600
Drain Current
I
DSS
(µA)
Drain Current
I
(µA)
DSS
DGv(V)– I
DSS
VN – I
DSS
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
60
50
DGv:VDD=2V→1.5V
VN:VDD=2V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
Cg=10pF
RL= 1kΩ
f=1kHz
80dB AMP
A-Curve Filter
vin=100mV
IDSS: VDS=2V
VGS=0V
40
30
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
Common Source
Ta = 25°C
20
10
0
0
100
200
300
400
500
600
0
100
200
300
400
500
600
Drain Current
I
(µA)
DSS
Drain Current
I
(µA)
DSS
3
2007-11-01
2SK3582TK
THD– I
DSS
C – V
iss DS
2.0
1.5
1.0
10
5
THD:VDD=2V
Cg=5pF
RL= 2.2kΩ
f=1kHz
vin=50mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
0.5
0
VGS=0V
f=1kHz
Common Source
Ta = 25°C
1
1
10
5
0
100
200
300
400
500
600
Drain - Source voltage
V
(V)
Drain Current
I
(µA)
DS
DSS
4
2007-11-01
2SK3582TK
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
相关型号：
2SK3582TK-A
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3582TK-B
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3582TV-A
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3582TV-B
TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General Purpose Small Signal
TOSHIBA
2SK3585G
Small Signal Field-Effect Transistor, 0.00046A I(D), 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明