2SK3585G [PANASONIC]
Small Signal Field-Effect Transistor, 0.00046A I(D), 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN;
| 型号： | 2SK3585G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Field-Effect Transistor, 0.00046A I(D), 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, SSSMINI3-F2, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon Junction FETs (Small Signal)
2SK3585G
Silicon N-channel junction FET
For impedance conversion in low frequency
For electret capacitor microphone
Package
Features
ꢀCode
High mutual conductance gm
Low noise voltage NV
SSSMini3-F2
ꢀPin Name
1: rain
Absolute Maximum Ratings Ta = 25°C
ce
Parameter
Symbol
VDSO
VDGO
IDSO
Rating
Unit
V
Drain-source voltage (Gate open)
Drain-gate voltage (Souece open)
Drain-source current (Gate open)
Drain-gate current (Souece open)
Gate-source cut-off current (Drain open)
Power dissipation
20
2
V
Marking Symbol: 5K
mA
mA
mA
mW
°C
IDO
IGSO
2
PD
100
Operating ambient temperature
Storage temperature
Tor
–20 to +0
–55 to +125
T
stg
°C
Electrical Characteristics Ta = 25°C±
Paam
Sym
ID
Conditions
Min
100
107
660
Typ
Max
460
470
Unit
mA
mA
mS
1
Drain currnt
VDS = 2.0 V, Rd = 2.2 kW ± 1%
VDS = 2.0 V, Rd = 2.2 kW ± 1%, VGS = 0
VD = 2.0 V, VGS = 0, f = 1 kHz
Din-source curret
Mutul conduance
IDSS
gm
1600
VD = 2.0 V, Rd = 2.2 kW ± 1%
CO = 5 pF, A-curve
Noise voltage
Voltage gain
NV
GV1
GV2
GV3
4
mV
VD = 2.0 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
–7.5
–4.0
–8.0
–4.7
–1.5
–5.0
VD = 12 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
dB
VD = 1.5 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
VD = 2.0 V, Rd = 2.2 kW ± 1%
CO = 5 pF, eG = 10 mV
f = 1 kHz to 70 Hz
2
DGV . f *
0
1.7
0
0
8
4.0
1.7
15
GV2 – GV1
GV1 – GV3
Rg
Voltage gain difference
Gate resistance
dB
VGS = 0.05 V
GW
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. A protection diode is built-in between gate and source of transistor. However if forward current flows between gate and source transistor
might be damaged. So please be careful not insert reverse.
3. *1: ID is assured for IDSS
.
2: D|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)
*
Publication date: October 2008
SJF00109AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3585G
SSSMini3-F2
Unit: mm
1.20 ±0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(
080 ±0.05
2
SJF00109AED
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Consult our sales staff in advance for information on the following applications:
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maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
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or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
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2008080
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