2SK3567_06 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator Applications; 硅N沟道MOS型开关稳压器的应用
| 型号： | 2SK3567_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type Switching Regulator Applications |
| 文件： | 总6页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3567
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3567
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
High forward transfer admittance: |Y | = 2.5S (typ.)
= 1.7Ω (typ.)
DS (ON)
fs
Low leakage current: I
= 100 μA (V
= 600 V)
DS
DSS
Enhancement mode: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
600
600
±30
3.5
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
1: Gate
2: Drain
3: Source
Drain current
A
Pulse (t = 1 ms)
I
14
35
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
Single pulse avalanche energy
E
201
mJ
JEDEC
JEITA
―
(Note 2)
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Avalanche current
I
3.5
3.5
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
TOSHIBA
AR
T
150
ch
Storage temperature range
T
-55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
3.57
62.5
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: = 90 V, T = 25°C(initial), L = 28.8 mH, I = 3.5 A, R = 25 Ω
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
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2SK3567
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Gate-source breakdown voltage
Drain cut-off current
V
V
= 0 V
(BR) GSS
DS
= 600 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 0 V
600
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
2.2
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 1.8 A
1.7
2.5
550
6
Ω
S
DS (ON)
⎪Y ⎪
D
= 10 V, I = 1.8 A
0.7
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
60
⎯
oss
10 V
GS
0 V
I
= 1.8 A
V
OUT
D
Rise time
t
r
⎯
⎯
⎯
⎯
12
45
13
80
⎯
⎯
⎯
⎯
V
Turn-on time
Switching time
t
R
L
=
on
50 Ω
111 Ω
ns
Fall time
t
f
∼
V
200 V
DD
<
Duty 1%, t = 10 μs
Turn-off time
t
w
off
16
10
6
Total gate charge
Gate-source charge
Gate-drain charge
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
∼
V
400 V, V
= 10 V, I = 3.5 A
nC
Q
DD
GS
D
gs
gd
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
3.5
Unit
A
Continuous drain reverse current
I
⎯
⎯
⎯
⎯
DR
(Note 1)
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
I
⎯
⎯
⎯
⎯
⎯
⎯
14
−1.7
⎯
A
V
DRP
V
I
I
= 3.5 A, V
= 3.5 A, V
= 0 V
DSF
DR
DR
GS
GS
t
= 0 V,
1400
9.0
ns
μC
rr
dI /dt = 100 A/μs
Q
rr
⎯
DR
Marking
K3567
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08
2SK3567
I
– V
I
– V
DS
D
DS
D
2
1.6
1.2
0.8
0.4
0
5
4
3
COMMON SOURCE
Tc = 25°C
15,10
8
15,10
5
6
5.5
5.5
8
PULSE TEST
6
COMMON SOURCE
Tc = 25°C
4.8
4.6
PULSE TEST
5
2
1
0
4.4
4.2
4.5
V
= 4 V
GS
V
= 4V
GS
4
12
0
1
2
3
4
0
8
16
20
5
DRAIN-SOURCE VOLTAGE
V
(V)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
DS
I
D
– V
V
– V
GS
GS
DS
4
3
20
16
12
8
COMMON SOURCE
Tc = 25℃
COMMON SOURCE
= 10 V
V
DS
PULSE TEST
PULSE TEST
2
1
I
= 3.5 A
D
Tc = −55°C
100
4
1.8
1
25
0
0
0
0
2
4
6
8
10
4
8
12
16
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪Y ⎪ – I
fs
R
– I
DS (ON) D
D
10
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
Tc = −55°C
25
100
1
V
= 10 V､15V
GS
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
0.1
0.1
1
0.1
1
10
1
10
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
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2SK3567
R
– Tc
I
– V
DS
DS (ON)
DR
10
8
100
10
1
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
= 10 V
V
GS
PULSE TEST
PULSE TEST
6
4
2
I
= 3.5A
D
1.8
1
10
5
V
= 0, −1 V
GS
1
3
0
0.1
−80
−40
0
40
80
120
160
100
200
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
5
4
10000
1000
100
C
iss
3
2
1
C
oss
COMMON SOURCE
= 10 V
COMMON SOURCE
10
C
rss
V
DS
= 1 mA
V
= 0 V
GS
I
D
f = 1 MHz
Tc = 25°C
PULSE TEST
1
0.1
0
−80
1
10
−40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
P
– Tc
D
50
40
30
500
20
16
12
8
400
300
200
100
0
V
DS
V
= 100 V
DD
200
400
20
10
COMMON SOURCE
= 3.5 A
V
GS
I
D
4
Tc = 25°C
PULSE TEST
0
25
0
0
40
80
120
160
0
5
10
15
20
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
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2SK3567
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.05
0.02
0.1
P
DM
t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
R
= 3.57°C/W
th (ch-c)
0.001
10μ
100μ
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH
t
(s)
w
SAFE OPERATING AREA
E
– T
ch
AS
100
10
1
240
200
160
120
I
max (PULSED) *
D
100 μs *
I
max (CONTINUOUS) *
D
1 ms *
80
40
0
DC OPERATION
Tc = 25°C
0.1
25
50
75
100
125
150
※
SINGLE NONREPETITIVE PULSE
Tc=25℃
CHANNEL TEMPERATURE (INITIAL)
(°C)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
T
ch
V
max
DSS
0.01
B
VDSS
10
100
1000
1
15 V
I
AR
DRAIN-SOURCE VOLTAGE
V
(V)
−15 V
DS
V
V
DD
DS
B
TEST CIRCUIT
WAVE FORM
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 28.8mH
B
VDSS
DD
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2006-11-08
2SK3567
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-08
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