2SK3569 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI); 东芝场效应晶体管硅N沟道MOS型（ PIE - MOSVI ）
| 型号： | 2SK3569 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) |
| 文件： | 总6页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R = 0.54Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 8.5S (typ.)
fs
Low leakage current: I
= 100 μA (V
= 600 V)
DSS
DS
DS
Enhancement-mode: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
600
600
±30
10
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kΩ)
V
V
GS
Gate-source voltage
DC
(Note 1)
I
D
Drain current
A
Pulse (t = 1 ms)
I
40
45
DP
(Note 1)
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
Single pulse avalanche energy
E
363
mJ
(Note 2)
Avalanche current
I
10
4.5
A
JEDEC
JEITA
―
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
SC-67
2-10U1B
Weight : 1.7 g (typ.)
T
150
ch
TOSHIBA
Storage temperature range
T
-55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
2.78
62.5
°C/W
°C/W
th (ch-c)
th (ch-a)
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V = 90 V, T = 25°C(initial), L = 6.36 mH, I = 10 A, R = 25 Ω
1
DD ch
AR
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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2004-03-04
2SK3569
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
±10
µA
V
GSS
GS
DS
Gate-source breakdown voltage
Drain cut-off current
V
V
I
= ±10 µA, V = 0 V
±30
(BR) GSS
G
DS
I
V
= 600 V, V = 0 V
GS
100
µA
V
DSS
DS
Drain-source breakdown voltage
Gate threshold voltage
I
= 10 mA, V
= 0 V
GS
600
2.0
(BR) DSS
D
V
V
V
V
= 10 V, I = 1 mA
4.0
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 5 A
0.54
8.5
0.75
Ω
S
DS (ON)
D
Y
= 10 V, I = 5 A
0.7
fs
D
C
C
1500
15
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
DS
rss
C
oss
180
10 V
I
= 5 A
V
OUT
D
Rise time
t
22
50
r
V
GS
0 V
Turn-on time
Switching time
t
R
L
=
on
50 Ω
40 Ω
Fall time
t
36
f
V
200 V
−
DD
<
Duty 1%, t = 10 µs
Turn-off time
t
180
=
w
off
42
23
19
Total gate charge
Gate-source charge
Gate-drain charge
Q
g
V
400 V, V
= 10 V, I = 10 A
nC
Q
gs
Q
gd
−
DD
GS
D
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
10
Unit
A
Continuous drain reverse current
I
DR
(Note 1)
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
I
40
A
V
DRP
V
I
I
= 10 A, V
= 10 A, V
= 0 V
−1.7
DSF
DR
DR
GS
t
= 0 V,
1300
16
ns
µC
rr
GS
dI /dt = 100 A/µs
Q
rr
DR
Marking
K3569
TYPE
※ Lot Number
※
2
2004-03-04
2SK3569
I
– V
I
– V
D
DS
COMMON SOURCE
Tc = 25°C
PULSE TEST
D
DS
10
8
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
5.3
6
8
10
5.1
6
16
12
8
5
10,8
5.5
4.8
5.25
6
5
4.6
4
4.75
4.5
4.4
4.2
4
2
0
V
GS
= 4 V
V
GS
= 4V
0
10
30
0
2
4
6
8
0
20
40
50
10
DRAIN-SOURCE VOLTAGE
V
(V)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
DS
I
– V
V
– V
DS GS
D
GS
20
16
12
8
10
8
COMMON SOURCE
Tc = 25℃
PULSE TEST
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
6
I
= 10 A
D
4
Tc = −55°C
5
100
4
2
25
2.5
16
0
0
0
2
4
6
8
10
0
4
8
12
20
GATE-SOURCE VOLTAGE
V
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
GS
Y
– I
R
– I
fs
D
DS (ON) D
100
10
1
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
Tc = −55°C
25
100
1
V
= 10 V､15V
GS
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
0.1
0.1
0.1
1
10
100
0.1
1
10
100
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
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2SK3569
R
– Tc
I
– V
DS (ON)
DR
DS
2.5
2.0
100
10
1
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
PULSE TEST
PULSE TEST
I
= 12A
D
1.5
1.0
0.5
6
3
V
GS
= 10 V
10
5
3
1
V
GS
= 0, −1 V
0
0.1
−80
−40
0
40
80
120
160
100
200
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE VOLTAGE
V
(V)
DS
CAPACITANCE – V
V
– Tc
th
DS
5
4
10000
1000
100
C
iss
C
oss
3
2
1
C
rss
COMMON SOURCE
= 10 V
COMMON SOURCE
V
f = 1 MHz
Tc = 25°C
10
V
DS
= 1 mA
= 0 V
GS
I
D
PULSE TEST
1
0
0.1
1
10
−80
−40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE
V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
P
– Tc
D
80
60
40
20
0
500
20
16
12
8
400
300
200
100
0
V
DS
V
DD
= 100 V
200
400
COMMON SOURCE
= 3 A
V
GS
I
D
4
Tc = 25°C
PULSE TEST
0
0
40
80
120
160
0
10
20
30
40
50
60
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
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2SK3569
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.05
0.02
0.1
P
DM
t
0.01
T
0.01
SINGLE PULSE
Duty = t/T
th (ch-c)
R
= 2.78°C/W
0.001
10μ
100μ
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH
t
(s)
w
SAFE OPERATING AREA
E
– T
AS ch
100
10
1
500
400
300
200
100
0
I
max (PULSED) *
D
100 µs *
I
max (CONTINUOUS) *
D
1 ms *
DC OPERATION
Tc = 25°C
0.1
25
50
75
100
125
150
※
SINGLE NONREPETITIVE PULSE
Tc=25℃
CHANNEL TEMPERATURE (INITIAL)
(°C)
T
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ch
V
max
DSS
0.01
B
VDSS
100
1000
10
1
15 V
I
AR
DRAIN-SOURCE VOLTAGE
V
DS
(V)
−15 V
V
V
DD
DS
B
TEST CIRCUIT
WAVE FORM
1
2
R
V
= 25 Ω
DD
VDSS
G
=
L I
Ε
AS
2
−
B
V
DD
= 90 V, L = 6.36mH
VDSS
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2SK3569
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2004-03-04
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