2SK3570 [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3570 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING
N-CHANNEL POWER MOS FET
★
DESCRIPTION
ORDERING INFORMATION
The 2SK3570 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
PART NUMBER
2SK3570
PACKAGE
TO-220AB
TO-262
2SK3570-S
2SK3570-ZK
2SK3570-Z
TO-263
Note
FEATURES
TO-220SMD
•4.5V drive available.
Note TO-220SMD package is produced only in Japan.
•Low on-state resistance,
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
•Low gate charge
QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
•Built-in gate protection diode
•Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
V
V
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
ID(pulse)
PT1
±48
±160
1.5
A
A
Note
Drain Current (pulse)
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
W
W
°C
PT2
29
Tch
150
Storage Temperature
Tstg
−55 to +150
°C
Note PW ≤ 10 µs, Duty Cycle ≤ 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16256EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark ! shows major revised points.
2002
©
2SK3570
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Symbol
Test Conditions
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
MIN.
TYP.
MAX.
Unit
µA
IDSS
10
±10
2.5
IGSS
µA
Gate Cut-off Voltage
VGS(off)
| yfs |
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 24 A
1.5
8.0
V
S
Forward Transfer Admittance
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 24 A
RDS(on)2 VGS = 4.5 V, ID = 15 A
8.2
12.3
930
12
22
mΩ
mΩ
pF
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
td(on)
tr
VGS = 0 V
360
250
13
20
39
14
23
4
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
f = 1 MHz
VDD = 10 V, ID = 24 A
VGS = 10 V
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
Total Gate Charge
QG
VDD = 16 V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 48 A
7
IF = 48 A, VGS = 0 V
IF = 48 A, VGS = 0 V
di/dt = 100 A/µs
1.1
33
25
ns
nC
Qrr
★
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
GS
R
L
90%
V
GS
Wave Form
VGS
10%
RG
0
PG.
VDD
50 Ω
PG.
VDD
VDS
90%
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1µs
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet D16256EJ2V0DS
2SK3570
★
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
D(pulse)
I
DS(on)
R
limited
PW = 10 µs
100 µs
D(DC)
I
DC
1 ms
Power dissipation
limited
10 ms
1
C
°
T
= 25 C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 4.31°C/W
1
0.1
Single pulse
100 1000
0.01
10 µ
100 µ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D16256EJ2V0DS
2SK3570
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
200
180
160
140
120
100
80
100
10
VGS = 10 V
Tch = 150°C
75°C
1
25°C
−55°C
60
4.5 V
0.1
0.01
40
VDS = 10 V
Pulsed
20
Pulsed
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
100
VDS = 10 V
ID = 1 mA
10
1
Tch = 150°C
75°C
1.5
1
25°C
−55°C
0.5
0
VDS = 10 V
Pulsed
0.1
-50
0
50
100
150
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
25
25
Pulsed
Pulsed
20
20
GS
15
15
10
5
V
= 4.5 V
10 V
ID = 24 A
10
5
0
0
0
5
10
15
20
1
10
100
1000
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16256EJ2V0DS
2SK3570
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1 0 0 0 0
20
15
VGS = 4.5 V
1 0 0 0
C is s
10
5
10 V
C o s s
C rs s
1 0 0
ID = 24 A
Pulsed
V G S = 0 V
f = 1 M H z
1 0
0
0 .0 1
0 .1
1
1 0
1 0 0
-50
0
50
100
150
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
10
100
10
1
td(off)
VDD = 16 V
10 V
16
12
8
8
tf
tr
6
td(on)
VGS
4
4
2
V D D = 10 V
V G S = 10 V
R G = 10 Ω
VDS
ID = 48 A
20
0
0
0
5
10
15
25
0.1
1
10
100
QG - Gate Change - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 0 00
1 0 0
1 0
1 0 0 0
1 0 0
1 0
P u lse d
V G S = 10 V
0 V
1
0 .1
0 .0 1
d i/d t = 1 0 0 A /µ s
V G S = 0 V
1
0 .1
1
1 0
1 0 0
0
0 .5
1
1 .5
ID - Drain Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D16256EJ2V0DS
2SK3570
★
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
10.6 MAX.
4.8 MAX.
1.3±0.2
φ
10 TYP.
3.6±0.2
1.3±0.2
10.0 TYP.
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
1.Gate
2.Drain
3.Source
2.54 TYP.
4.Fin (Drain)
Note
4) TO-220SMD (MP-25Z)
3) TO-263 (MP-25ZK)
4.8 MAX.
10 TYP.
4
10.0±0.2
4.45±0.2
1.3±0.2
0.4
1.3±0.2
No plating
8.4 TYP.
4
0.025 to
0.25
1
2
3
1.4±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
0.7±0.15
1.Gate
2.54
2.Drain
3.Source
0.25
1
2
3
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used, an
additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
6
Data Sheet D16256EJ2V0DS
2SK3570
[MEMO]
7
Data Sheet D16256EJ2V0DS
2SK3570
•
The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
©2020 ICPDF网 联系我们和版权申明