2SK2963_07 [TOSHIBA]
Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications; 硅N沟道MOS型DC-DC转换器，继电器驱动器和电机驱动应用
| 型号： | 2SK2963_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications |
| 文件： | 总6页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2963
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V)
2SK2963
DC-DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
•
•
•
•
•
4 V gate drive
Low drain-source ON resistance: R
= 0.5 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 1.2 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 100 V)
DSS
DS
Enhancement-mode: V = 0.8 to 2.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
100
100
±20
1
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
3
DP
JEDEC
⎯
⎯
Drain power dissipation
Drain power dissipation
P
0.5
1.5
W
W
D
D
JEITA
(Note 2)
P
TOSHIBA
2-5K1B
Single pulse avalanche energy
(Note 3)
E
137
mJ
AS
AR
Weight: 0.05 g (typ.)
Avalanche current
I
1
0.05
A
Repetitive avalanche energy (Note 4)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
stg
−55 to 150
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3:
V
DD
= 25 V, T = 25°C (initial), L = 221 mH, R = 25 Ω, I
= 1 A
AR
ch
G
Note 4: Repetitive rating: pulse width limited by maximum junction temperature.
Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Symbol
Max
250
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
1
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2SK2963
Marking
Z B
(The two digits represent the part number.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V = 0 V
DS
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
V
GSS
GS
DS
Drain cut-off current
I
= 100 V, V
= 0 V
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
V
I
= 10 mA, V
= 0 V
100
0.8
⎯
⎯
D
GS
V
V
V
V
V
V
V
V
= 10 V, I = 1 mA
⎯
2.0
0.95
0.7
⎯
V
th
DS
GS
GS
DS
DS
DS
DS
D
= 4 V, I = 0.5 A
0.65
0.5
1.2
140
20
D
Drain-source ON resistance
R
Ω
DS (ON)
= 10 V, I = 0.5 A
⎯
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 0.5 A
0.6
⎯
S
D
C
= 10 V, V
= 10 V, V
= 10 V, V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
⎯
pF
pF
pF
iss
rss
oss
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
⎯
C
⎯
45
⎯
I
= 0.5 A
Rise time
t
D
⎯
⎯
⎯
⎯
⎯
8
⎯
⎯
⎯
⎯
⎯
r
10 V
GS
V
OUT
V
0 V
Turn-on time
t
13
on
Switching time
ns
Fall time
t
45
f
∼
V
50 V
DD
Turn-off time
t
175
6.3
off
Duty ≤ 1%, t = 10 μs
w
Total gate charge
∼
Q
V
80 V, V
= 10 V, I = 1 A
nC
g
DD
GS
D
(gate-source plus gate-drain)
∼
Gate-source charge
Q
V
V
80 V, V
80 V, V
= 10 V, I = 1 A
⎯
⎯
4.3
2
⎯
⎯
nC
nC
gs
DD
DD
GS
GS
D
∼
Gate-drain (“miller”) charge
Q
= 10 V, I = 1 A
D
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
1
Unit
A
Continuous drain reverse current
I
⎯
⎯
⎯
⎯
DR
(Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
I
⎯
⎯
⎯
⎯
⎯
⎯
3
−1.5
⎯
A
V
DRP
V
I
I
I
= 1 A, V
= 1 A, V
= 1 A, V
= 0 V
DSF
DR
DR
DR
GS
GS
GS
Reverse recovery time
t
= 0 V, dI /dt = 50 A/μs
DR
80
ns
μC
rr
Reverse recovery charge
Q
rr
= 0 V, dI /dt = 50 A/μs
DR
140
⎯
2
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2SK2963
3
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2SK2963
4
2007-03-16
2SK2963
5
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2SK2963
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third
parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-03-16
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