2SK2964_06 [TOSHIBA]

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications; 硅N沟道MOS型斩波稳压器, DC-DC转换器和电机驱动应用
2SK2964_06
型号: 2SK2964_06
厂家: TOSHIBA    TOSHIBA
描述:

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
硅N沟道MOS型斩波稳压器, DC-DC转换器和电机驱动应用

转换器 稳压器 电机 驱动 DC-DC转换器
文件: 总6页 (文件大小:683K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SK2964  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSVI)  
2SK2964  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z
z
z
z
z
4-V gate drive  
Low drainsource ON resistance  
High forward transfer admittance  
: R = 0.13 (typ.)  
DS (ON)  
: |Y | = 2.5 S (typ.)  
fs  
Low leakage current : I  
= 100 μA (max) (V  
= 30 V)  
= 10 V, I = 1 mA)  
DSS  
DS  
Enhancement mode : V = 0.8~2.0 V (V  
th DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
GSS  
±20  
DC (Note 1)  
Pulse (Note 1)  
2
A
I
D
Drain current  
I
6
A
DP  
Drain power dissipation  
Drain power dissipation  
P
0.5  
1.5  
W
W
D
D
JEDEC  
JEITA  
(Note 2)  
P
Single pulse avalanche energy  
(Note 3)  
E
56  
mJ  
TOSHIBA  
2-5K1B  
AS  
AR  
Weight: 0.05 g (typ.)  
Avalanche current  
I
2
0.05  
A
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
250  
Unit  
Thermal resistance, channel to  
ambient  
R
°C / W  
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)  
Note 3:  
V
DD  
= 25 V, T = 25°C (initial), L = 10 mH, R = 25 , I = 2 A  
ch AR  
G
Note 4: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2006-11-16  
2SK2964  
Marking  
Part No. (or abbreviation code)  
Z C  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Lot No.  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Gate leakage current  
I
V
V
= ±16 V, V = 0 V  
DS  
±10  
100  
μA  
μA  
V
GSS  
GS  
Drain cutoff current  
I
= 30 V, V  
= 0 V  
DSS  
(BR) DSS  
DS  
GS  
GS  
Drainsource breakdown voltage  
Gate threshold voltage  
V
I
D
= 10 mA, V  
= 0 V  
30  
0.8  
V
th  
V
DS  
V
GS  
V
GS  
V
DS  
= 10 V, I = 1 mA  
2.0  
0.25  
0.18  
V
D
= 4 V, I = 1 A  
0.18  
0.13  
2.5  
140  
30  
D
Drainsource ON resistance  
R
DS (ON)  
= 10 V, I = 1 A  
D
Forward transfer admittance  
Input capacitance  
|Y  
fs  
|
= 10 V, I = 1 A  
1.2  
S
D
C
C
iss  
V
DS  
= 10 V, V  
= 0 V, f = 1 MHz  
pF  
Reverse transfer capacitance  
Output capacitance  
GS  
rss  
C
80  
oss  
Rise time  
t
10  
15  
85  
r
Turnon time  
Switching time  
t
on  
ns  
Fall time  
t
f
Turnoff time  
t
195  
5.8  
off  
Total gate charge (gatesource  
plus gatedrain)  
Q
g
V
DD  
24 V, V  
= 10 V, I = 2 A  
nC  
GS  
D
Gatesource charge  
Q
4.3  
1.5  
gs  
Gatedrain (“miller”) Charge  
Q
gd  
SourceDrain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
2
Unit  
A
Continuous drain reverse current  
(Note 1)  
I
DR  
Pulse drain reverse current  
(Note 1)  
I
6
A
DRP  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
V
I
I
= 2 A, V  
= 2 A, V  
= 0 V  
50  
20  
1.5  
V
DSF  
DR  
GS  
t
rr  
ns  
nC  
= 0 V, dI  
/ dt = 50 A / μs  
DR  
GS  
DR  
Q
rr  
2
2006-11-16  
2SK2964  
3
2006-11-16  
2SK2964  
4
2006-11-16  
2SK2964  
コメント [H2]: Mounted on a  
ceramic sbstrate  
a が抜けています。  
R
V
= 25 Ω  
G
1
2
B
VDSS  
E
=
L I2  
AS  
= 25 V, L = 10 mH  
DD  
B
V  
DD  
VDSS  
5
2006-11-16  
2SK2964  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-16  

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