2SD2695 [TOSHIBA]

Silicon NPN Epitaxial Type (Darlington Power Transistor); 硅NPN外延型(达林顿功率晶体管)
2SD2695
型号: 2SD2695
厂家: TOSHIBA    TOSHIBA
描述:

Silicon NPN Epitaxial Type (Darlington Power Transistor)
硅NPN外延型(达林顿功率晶体管)

晶体 晶体管
文件: 总5页 (文件大小:131K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SD2695  
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)  
2SD2695  
Micro Motor Drive, Hammer Drive Applications  
Unit: mm  
Switching Applications  
Power Amplifier Applications  
High DC current gain: h  
= 2000 (min) (V  
= 2 V, I = 1 A)  
FE  
CE C  
Low saturation voltage: V  
= 1.5 V (max) (I = 1 A, I = 1 mA)  
C B  
CE (sat)  
Zener diode included between collector and base  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
60 ± 10  
8
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
2
A
C
Base current  
I
0.5  
A
B
JEDEC  
JEITA  
TO-92MOD  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
0.9  
W
°C  
°C  
C
T
150  
j
TOSHIBA  
2-5J1A  
T
stg  
55 to 150  
Weight: 0.36 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Equivalent Circuit  
COLLECTOR  
BASE  
4 kΩ  
800 Ω  
EMITTER  
1
2006-11-21  
2SD2695  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 45 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
10  
4
μA  
mA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 8 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
DC current gain  
V
I
= 10 mA, I = 0  
50  
60  
70  
1.5  
2.0  
C
B
h
V
= 2 V, I = 1 A (pulsed)  
2000  
FE  
CE  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
I
I
= 1 A, I = 1 mA (pulsed)  
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= 1 A, I = 1 mA (pulsed)  
B
f
V
V
= 2 V, I = 0.5 A (pulsed)  
100  
20  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
Unclamped inductive load energy  
C
= 10 V, I = 0, f = 1 MHz  
ob  
E
E
L = 10 mH, I = 2.0 A, I = ±50 mA  
20  
mJ  
S/B  
C
B
Turn-on time  
t
0.4  
4.0  
0.6  
on  
Output  
20 μs  
I
I
B1  
Input  
Switching time  
Storage time  
μs  
B2  
V
t
stg  
= 30 V  
CC  
Fall time  
t
f
I
= I = 1 mA, duty cycle 1%  
B2  
B1  
Marking  
D2695  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-21  
2SD2695  
I
– V  
h
– I  
FE C  
C
CE  
10000  
2.0  
500  
250  
Common emitter  
= 2 V  
Common emitter  
Ta = 25°C  
V
CE  
1.6  
1.2  
200  
180  
Ta = 100°C  
1000  
100  
55  
I
= 170 μA  
0.8  
0.4  
0
B
25  
P
= 0.9 W  
8
C
10  
0
2
4
6
10  
0.01  
0.1  
1
10  
Collector-emitter voltage  
V
(V)  
CE  
Collector current  
I
C
(A)  
V
– I  
I – V  
C BE  
CE (sat)  
C
2.0  
10  
Common emitter  
Common emitter  
= 2 V  
I
/I = 1000  
C B  
V
CE  
1.6  
1.2  
55  
Ta = 100°C  
Ta = 55°C  
1
100  
0.8  
0.4  
0
25  
25  
0.1  
0.1  
1
10  
0
0.8  
1.6  
2.4  
3.2  
4
Base-emitter voltage  
V
(V)  
BE  
Collector current  
I
C
(A)  
V
– I  
C
BE (sat)  
P
Ta  
C
2.0  
10  
Common emitter  
/I = 1000  
I
C B  
1.5  
1.0  
Ta = 55°C  
25  
0.5  
0
100  
1
0.1  
1
10  
0
40  
80  
120  
160  
200  
Collector current  
I
C
(A)  
Ambient temperature Ta (°C)  
3
2006-11-21  
2SD2695  
Safe Operating Area  
5
3
I
max (pulsed)*  
C
100 μs*  
I
max (continuous)  
C
10 ms*  
1
DC operation  
Ta = 25°C  
1 ms*  
0.5  
0.3  
0.1  
*: Single nonrepetitive pulse  
Ta = 25°C  
0.05  
0.03  
Curves must be derated  
linearly with increase in  
temperature.  
V
max  
CEO  
0.01  
0.1  
100  
0.3  
1
3
10  
30 50  
(V)  
Collector-emitter voltage  
V
CE  
4
2006-11-21  
2SD2695  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
5
2006-11-21  

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